Education
Ph.D., University of Illinois: Urbana-Champaign, 1981 (Physics)
M.S., University of Illinois: Urbana-Champaign, 1976 (Physics)
B.S. (summa cum laude), University of Idaho, 1975 (Physics and Mathematics)
Research
Bulk crystal growth (nitride semiconductors) Molecular Beam Epitaxy (process
development, characterization, heteroepitaxy), Electron transport at interfaces
(hot carriers, resonant tunneling, ballistic electron emission microscopy),
Optical properties of semiconductors.
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Ballistic Electron Emission Microscopy
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Epitaxial Insulators
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Wide Band-gap Semiconductors
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Nanocrystals
Publications (partial list)
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``Nucleation of GaAs on CaF2/Si(111) Substrates,'' W. Li, T. Anan, and
L.J. Schowalter, Appl. Phys. Lett. 65, 595 (1994).
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``Molecular beam epitaxial growth of GaAs on CaF2/Si(111) substrate,''
W. Li, T. Anan, and L.J. Schowalter, J. Vac. Sci. Technol. B12, 1067 (1994).
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``Optimization of GaAs epitaxy on CaF2/Si(111) substrates,'' W. Li, T.
Anan, and L.J. Schowalter, J. Crystal Growth 135, 78 (1994).
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``Residual strains in epitaxial fluorides on Si(111) substrates,'' L.J.
Schowalter and W. Li, Appl. Phys. Lett. 62, 696 (1993).
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``Strain in pseudomorphic films grown on arbitrarily oriented substrates,''
K. Yang, T. Anan, and L. J. Schowalter, Appl, Phys. Lett. 65, 2789 (1994).
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``Diffusive and Inelastic Scattering in Ballistic-Electron-Emission Spectroscopy
and Ballistic-Electron-Emission Microscopy,'' E.Y. Lee, B.R. Turner, L.J.
Schowalter, and J.R. Jimenez, J. Vac Sci. Technol. B11, 1579 (1993).
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``Diffusion length of Ga adatoms on GaAs (111)B surface in the reconstruction
growth regime,'' K. Yang, L.J. Schowalter, and T. Thundat, Appl. Phys.
Lett. 64, 1641 (1994).
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``Molecular-beam epitaxy on exact and vicinal GaAs(111)B substrates,''
K. Yang, L.J. Schowalter, B.K. Laurich, I.H. Campell, and D.L. Smith, J.
Vac. Sci. Technol. B11, 779 (1993).
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``In situ laser light scattering for monitoring III-V semiconductor film
growth by molecular-beam epitaxy,'' K. Yang, E. Mirabelli, Z.-C. Wu, and
L.J. Schowalter, J.Vac. Sci. Technol. B11, 1011 (1993).
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``Electron-hole pair creation and metal/semiconductor interface scattering
observed by ballistic-electron-emission microscopy,'' E.Y. Lee and L.J.
Schowalter, Phys. Rev. B (Rap. Comm.) 45, 6325 (1992).
Molecular Beam Epitaxy and
STM/BEEM Group
Aluminum Nitride Crystal
Growth Group
Students
Recent Students
Recent Visiting Scientists or Postdocs
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Dr. Carl A. Ventrice, Jr. (presently an Asst. Prof. at Univ. of New Orleans)
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Mitsuhiro Kushibe (staff scientist at Toshiba)
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Dr. Nikolai Yakovlev (staff scientist at Ioffe Institute, St. Petersburg)
Leo J. Schowalter
Professor and Chair
Physics, Applied Physics & Astronomy Department
Rensselaer Polytechnic Institute
110 8th Street, Science Center
Troy, NY 12180-3590
phone (518) 276-6435 / fax (518) 276-8761
E-mail: schowalt@unix.cie.rpi.edu
CIEEM
Condensed Matter
Physics subdivision of the Department
of Physics, Applied Physics, and Astronomy
RPI INFO
Last updated on 2/4/98
