Education
Ph.D., University of Illinois: Urbana-Champaign, 1981
(Physics)
M.S., University of Illinois: Urbana-Champaign, 1976 (Physics)
B.S. (summa cum laude), University of Idaho, 1975 (Physics and Mathematics)
Research
Bulk crystal growth (nitride semiconductors) Molecular Beam
Epitaxy (process development, characterization, heteroepitaxy), Electron
transport at interfaces (hot carriers, resonant tunneling, ballistic electron
emission microscopy), Optical properties of semiconductors.
- Ballistic Electron Emission Microscopy
- Epitaxial Insulators
- Wide Band-gap Semiconductors
- Nanocrystals
Publications (partial list)
- ``Nucleation of GaAs on CaF2/Si(111) Substrates,'' W. Li, T. Anan, and
L.J. Schowalter, Appl. Phys. Lett. 65, 595 (1994).
- ``Molecular beam epitaxial growth of GaAs on CaF2/Si(111) substrate,'' W.
Li, T. Anan, and L.J. Schowalter, J. Vac. Sci. Technol. B12, 1067 (1994).
- ``Optimization of GaAs epitaxy on CaF2/Si(111) substrates,'' W. Li, T.
Anan, and L.J. Schowalter, J. Crystal Growth 135, 78 (1994).
- ``Residual strains in epitaxial fluorides on Si(111) substrates,'' L.J.
Schowalter and W. Li, Appl. Phys. Lett. 62, 696 (1993).
- ``Strain in pseudomorphic films grown on arbitrarily oriented
substrates,'' K. Yang, T. Anan, and L. J. Schowalter, Appl, Phys. Lett. 65,
2789 (1994).
- ``Diffusive and Inelastic Scattering in Ballistic-Electron-Emission
Spectroscopy and Ballistic-Electron-Emission Microscopy,'' E.Y. Lee, B.R.
Turner, L.J. Schowalter, and J.R. Jimenez, J. Vac Sci. Technol. B11, 1579
(1993).
- ``Diffusion length of Ga adatoms on GaAs (111)B surface in the
reconstruction growth regime,'' K. Yang, L.J. Schowalter, and T. Thundat,
Appl. Phys. Lett. 64, 1641 (1994).
- ``Molecular-beam epitaxy on exact and vicinal GaAs(111)B substrates,'' K.
Yang, L.J. Schowalter, B.K. Laurich, I.H. Campell, and D.L. Smith, J. Vac.
Sci. Technol. B11, 779 (1993).
- ``In situ laser light scattering for monitoring III-V semiconductor film
growth by molecular-beam epitaxy,'' K. Yang, E. Mirabelli, Z.-C. Wu, and L.J.
Schowalter, J.Vac. Sci. Technol. B11, 1011 (1993).
- ``Electron-hole pair creation and metal/semiconductor interface scattering
observed by ballistic-electron-emission microscopy,'' E.Y. Lee and L.J.
Schowalter, Phys. Rev. B (Rap. Comm.) 45, 6325 (1992).
Molecular Beam Epitaxy and STM/BEEM
Group
Aluminum Nitride Crystal Growth
Group
Students
Recent Students
Recent Visiting Scientists or Postdocs
- Dr. Carl A. Ventrice, Jr. (presently an Asst. Prof. at Univ. of New
Orleans)
- Mitsuhiro Kushibe (staff scientist at Toshiba)
- Dr. Nikolai Yakovlev (staff scientist at Ioffe Institute, St. Petersburg)
Leo J. Schowalter
Professor and Chair
Physics, Applied Physics &
Astronomy Department
Rensselaer Polytechnic Institute
110 8th Street,
Science Center
Troy, NY 12180-3590
phone (518) 276-6435 / fax (518) 276-8761
E-mail:mailto:schowalt@unix.cie.rpi.edu
CIEEM
Condensed Matter Physics
subdivision of the Department of Physics, Applied
Physics, and Astronomy
RPI INFO
Last updated on 2/4/98
