Untitled Document

2. "Terahertz detection by GaN/AlGaN transistors", A. El Fatimy, N. Dyakonova, F. Teppe, W. Knap, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. B. Veksler, S. Rumyantsev, M. S. Shur, D. Seliuta, G. Valusis, S. Bollaert, A. Shchepetov, Y. Roelens, C. Gaquiere, D. Theron, and A. Cappy, Electronics Letters, vol. 42, Issue 23, p. 1342-1344, (2006)

7. "Generation Recombination Noise in GaN-Based Devices", S. L. Rumyantsev, N. Pala, M. S. Shur, M. E. Levinshtein, R. Gaska, M. Asif Khan and G. Simin, International Journal of High Speed Electronics and Systems, vol. 14, p. 175, (2004)

8. "CuS thin films on flexible substrates", N. Pala, S.L. Rumyantsev, J. Sinius, S. Talapatra, M.S. Shur and R. Gaska, Electronics Letters, vol. 40, p. 273, (2004)

1. “Resonant Detection and Modulation of Terahertz Radiation by 2DEG Plasmons in GaN Grating-Gate Structures”, N. Pala, D. Veksler, A. Muravjov, W. Stillman, R. Gaska, M. S. Shur, IEEE Sensors 2007 The 6th IEEE Conference on Sensors, Atlanta, GA October 28-31, 2007

2. ”Nanometer Scale Complementary Silicon MOSFETs as Detectors of Terahertz and Sub-terahertz Radiation”, W. Stillman, F. Guarin, V. Yu. Kachorovskii, N. Pala, S. Rumyantsev, M.S. Shur and D. Veksler, IEEE Sensors 2007 The 6th IEEE Conference on Sensors, Atlanta, GA October 28-31, 2007

3. “Detection and Homodyne Mixing of Terahertz Gas Laser Radiation by Submicron GaAs/AlGaAs FETs”, D. Veksler, A. Muravjov, S. Rumyantsev, W. Stillman, N. Pala, and M. Shur, IEEE Sensors 2007 The 6th IEEE Conference on Sensors, Atlanta, GA October 28-31, 2007

4. “Properties of HfO2 Deposited on AlGaN/GaN Structures Using e-beam Technique”, V. Tokranov, S. Oktyabrsky, S.L. Rumyantsev, M.S. Shur, N. Pala, R. Jain, J. Yang and R. Gaska, The 34th International Symposium on Compound Semiconductors, Kyoto, Japan, October, 15-18, 2007

5. “Field Engineering using Drain Field Controlling Electrode for Ultra High Frequency GaN-based Power HEMTs”, A. Koudymov, N. Pala, Z. Yang, X. Hu, J. Deng, R. Gaska, G. Simin, and M. S. Shur , 7th International Conference of Nitride Semiconductors, Las Vegas, NV, September 16-21, 2007

6. “DC and Microwave performance of Recessed Gate III-N HFETs with InGaN etch-stop layer”, Z. Yang , N. Pala, J. Deng, X. Hu, A. Koudymov, G.Simin, J. Yang, R. Gaska, and M. S. Shur 7th International Conference of Nitride Semiconductors, Las Vegas, NV, September 16-21, 2007

9. “Terahertz Detection by GaN-based Field-Effect-Transistors and Heterodimensional Schottky Diodes”, D. B. Veksler, A. El Fatimy, N. Dyakonova, F. Teppe, W. Knap, N. Pala, R. Gaska, S. Rumyantsev, M. S. Shur, D. Seliuta, G. Valusis, S. Bollaert, A. Shchepetov,Y. Roelens, C. Gaquiere, D. Theronand A. Cappy International Workshop on Nitride Semiconductors 2006, Kyoto, Japan, October 22-27, 2006

10. “Detection and Emission of Terahertz Radiation by Nanometer-Size InGaAs and GaN Field-Effect-Transistors", D. B. Veksler, A. El Fatimy, N. Dyakonova, F. Teppe, W. Knap, N. Pala, S. Roumiantsev, M. S. Shur, S. Bollaert, A. Shchepetov, Y. Roelens, Ch. Gaquiere, D. Theron, and A. Cappy, 14th Int. Symp. Nanostructures: Physics and Technology", (2006)

11. “Low frequency noise of GaN-based UV LEDs”, S. Sawyer, S. L. Rumyantsev, N. Pala, M. S. Shur, Y. U. Bilenko, J. P. Zhang, X. Hu, A. Lunev, J. Deng and R. Gaska; MRS Fall Meeting, Symposium FF, November 28 - December 2, 2005, Boston, MA

12. “Optical and Current Noise of GaN Based Light Emitting Diodes”, S. Sawyer, S. L. Rumyantsev, N. Pala, M. S. Shur, Yu. Bilenko, J. P. Zhang, X. Hu, A. Lunev, J. Deng, and R. Gaska ,International Semiconductor Device Research Symposium, December 7-9, 2005, Bethesda, MD

13. “Low frequency noise of light emitting diodes”, S. L. Rumyantsev, S. Sawyer, N. Pala, M. S. Shur, Yu. Bilenko, J. P. Zhang, X. Hu, A. Lunev, J. Deng, and R. Gaska, SPIE Fluctuation and Noise Symp., May 23-26, 2005, Austin, TX , Noise in Devices and Circuits III, edited by Alexander A. Balandin, François Danneville, M. Jamal Deen, Daniel M. Fleetwood, Proceedings of SPIE Vol. 5844, pp.75-85, (2005)

14. “Ultraviolet-sensitive AlGaN-based surface acoustic wave devices”, D. Ciplys, M.S. Shur, N. Pala, A. Sereika, R. Rimeika, R. Gaska, Q. Fareed, IEEE Sensors 2004, Third IEEE International Conference on Sensors Edited by D.Rocha, P.M.Sarro and M.J.Vellekoop, pp. 1345 – 1348, October 24 - 27, 2004, Vienna University of Technology Vienna, Austria.

15. “Noise characteristics of 340nm and 280nm GaN-based light emitting diodes”, S. Sawyer, S. Rumyantsev, N. Pala, M.S. Shur, Yu. Bilenko, R. Gaska, P.V. Kosterin, and B.M. Salzberg, IEEE Lester Eastman Conference on High Performance Devices, August 2004, Troy, NY.

16. “Structural and Electrical Properties of CuS Thin Films on Flexible Substrates”, N. Pala, S.L. Rumyantsev, J. Sinius, M.S. Shur, R. Gaska, Proceedings of 12th International Symposium on Nanostructures:Physics and Technology, St. Petersburg, Russia, June 21–25, 2004.

17. “Deep Ultraviolet AlGaN Optoelectronic Transistor Arrays”, J. Deng, X. Hu, Q. Fareed, N. Pala, R. Gaska, M. Shatalov, G.Simin, A. Khan and M. Shur, MRS 8th Wide-Bandgap III-Nitride Workshop, September 29 – October 1, 2003, Richmond, VA.

18. “1/f Noise in GaN/AlGaN Heterostructure Field Effect Transistors From Linear Regime to Saturation”, S. Rumyantsev, N. Pala, M. Shur, M. Levinshtein, R. Gaska, X. Hu, M. Asif Khan, G. Simin, Proceedings of 17th International Conference on Noise and Fluctuations, pp. 361-364, August 18-22, 2003, Prague, Czech Republic.

19. Invited Paper “Generation-Recombination Noise in GaN and GaN-based Devices”, N. Pala, S. L. Rumyantsev, M. S. Shur, M. E. Levinshtein, M. Asif Khan, G. Simin, and R. Gaska, SPIE’s First International Symposium on Fluctuations and Noise, Santa Fe, New Mexico, 1–4 June 2003.

		Nezih PALA Ph.D., Rensselaer Polytechnic Institute, 2002 Research Scholar Electrical, Computer and Systems Engineering Department Center for Integrated Electronics and Electronics Manufacturing CII 9107, 110 8th Street, Rensselaer Polytechnic Institute, TROY, NY, 12180 email:palan@rpi.edu Phone: (518) 276 6405 Fax: (518) 276 2990

Biography
Resume in pdf format	Resume in HTML format		Short Biography
Research Interests
THz Technology - with RPI Center for Terahertz Research Biosensors Hybrid Semiconductor/Nanodevice Integrated Circuits - with Dr. Konstantin K. Likharev Free Space Optics - with Dr. Murat Yuksel GaN-Based Transistors for High Power High Frequency Applications GaN-Based UV Photodetectors Addressable Printheads for Nanoprinting Flexible Electronics Low Frequency Noise Analysis - with Dr. Sergey L. Rumyantsev

Publications
JOURNAL PUBLICATIONS 1. "The HfO2/AlGaN/GaN structures with HfO2 deposited at ultra low pressure using e-beam", V. Tokranov, S.L. Rumyantsev, M.S. Shur, R.Gaska, S. Oktyabrsky, R. Jain, N. Pala, phys. stat. sol. (RRL) 1, No. 5, 199–201 (2007) 2. "Terahertz detection by GaN/AlGaN transistors", A. El Fatimy, N. Dyakonova, F. Teppe, W. Knap, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. B. Veksler, S. Rumyantsev, M. S. Shur, D. Seliuta, G. Valusis, S. Bollaert, A. Shchepetov, Y. Roelens, C. Gaquiere, D. Theron, and A. Cappy, Electronics Letters, vol. 42, Issue 23, p. 1342-1344, (2006) 3. "Effect of Ambient Pressure on Resistance and Resistance Fluctuations in Single-Wall Carbon Nanotube Devices", A. Vijayaraghavan, S. Kar1, S. Rumyantsev, A. Khanna, C. Soldano, N. Pala, R. Vajtai, O. Nalamasu, M. S. Shur, and P.M. Ajayan , Journal of Applied Physics, vol. 100, p. 024315, (2006) 4. "Current and optical noise of GaN/AlGaN light emitting diodes", S. Sawyer, S. L. Rumyantsev, M. S. Shur, N. Pala, Yu. Bilenko, J. P. Zhang, X. Hu, A. Lunev, J. Deng, and R. Gaska, Journal of Applied Physics, vol. 100, p. 034504, (2006) 5. " Low-frequency noise of GaN-based ultraviolet light-emitting diodes", S. L. Rumyantsev, S. Sawyer, M. S. Shur, N. Pala, Yu. Bilenko, J. P. Zhang, X. Hu, A. Lunev, J. Deng, and R. Gaska, Journal of Applied Physics, vol. 97, p. 123107, (2005) 6. "Nonresonant detection of terahertz radiation by Silicon-On-Insulator MOSFETs", N. Pala, F. Teppe, D. Veksler, Y. Deng, M.S. Shur, R. Gaska, Electronics Letters, vol. 41, pp. 89-90, (2005) 7. "Generation Recombination Noise in GaN-Based Devices", S. L. Rumyantsev, N. Pala, M. S. Shur, M. E. Levinshtein, R. Gaska, M. Asif Khan and G. Simin, International Journal of High Speed Electronics and Systems, vol. 14, p. 175, (2004) 8. "CuS thin films on flexible substrates", N. Pala, S.L. Rumyantsev, J. Sinius, S. Talapatra, M.S. Shur and R. Gaska, Electronics Letters, vol. 40, p. 273, (2004) 9. “Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region”, S. L. Rumyantsev, N. Pala, M. S. Shur, M. E. Levinshtein, M. Asif Khan, G. Simin, and J. Yang, Journal of Applied Physics, Vol. 93, No. 12, pp. 10030-34, 16 June 2003. 10. “AlGaN/GaN Heterostructure Field Effect Transistor on Single Crystal Bulk AlN", X. Hu, J. Deng, N. Pala, R. Gaska, M. S. Shur, C. Q. Chen, J. Yang, S. Simin, A. Khan, J. C. Rojo and L.J. Schowalter, Applied Physics Letters, Vol. 82, No. 8, pp. 1299-1301, February 24, 2003. 11. “Low Frequency Noise in AlGaN/InGaN/GaN Double Heterostructure Field Effect Transistors”, N. Pala, S. L. Rumyantsev, M. S. Shur, R. Gaska, X. Hu, J. Yang, G. Simin, and M. Asif Khan, Solid State Electronics, Vol. 47, No. 6, pp.1099-1104, 2003. 12. “Generation-Recombination and 1/f Noise in Al0.4Ga0.6N Thin Films”, N. Pala, S. L. Rumyantsev, M. S. Shur, R. Gaska, X. Hu, J. Yang, G. Simin, and M. Asif Khan, Fluctuations and Noise Letters, Vol. 2, No. 4, pp. L349–L355, 2002. 13. “Low-frequency noise in AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors”, S. L. Rumyantsev N. Pala, M. S. Shur, M. E. Levinshtein P. A. Ivanov, M. Asif Khan, G. Simin, J. Yang, X. Hu, A. Tarakji, and R. Gaska, Fluctuations and Noise Letters, Vol. 1, No. 4, pp. L221–226, 2001. 14. “Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures”, S. L. Rumyantsev, Y. Deng, E. Borovitskaya, A. Dmitriev, W. Knap, N. Pala, M. S. Shur, M. E. Levinshtein, M. Asif Khan, G. Simin, J. Yang, and X. Hu, Journal of Applied Physics, Vol. 92, No. 8, pp. 4726-4730, October 15, 2002. 15. “Transient response of Highly Doped Thin Channel GaN Metal-Semiconductor and Metal-Oxide-Semiconductor Field Effect Transistors”, N. Pala, S. L. Rumyantsev, M. S. Shur , R. Gaska, M. Asif Khan, G. Simin, X. Hu, J. Yang, Solid State Electronics, Vol. 46, pp.711–714, 2002. 16. “Concentration dependence of the 1/f noise in AlGaN/GaN Heterostructure Field Effect Transistors”, S. L. Rumyantsev, N. Pala, M. S. Shur , R. Gaska, M. E. Levinshtein, P. A. Ivanov, M. Asif Khan, G. Simin, X. Hu, J. Yang, Semiconductor Science and Technology Vol. 17, No. 5, pp. 476-479, May 2002. 17. “Low frequency noise in Al 0.4 Ga 0.6 N-based Schottky barrier photodetectors”, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, V. Adivarahan, J. Yang, G. Simin and M. Asif Khan, Applied Physics Letters, Vol. 79, No. 6, pp.866-868, August 6, 2001. 18. “Low Frequency noise in GaN Metal Semiconductor and Metal Oxide Semiconductor Field Effect Transistors”, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, G. Simin, X. Hu, and J. Yang, Journal of Applied Physics, Vol. 90, No. 1, pp. 310-314, July 2001. 19. “Thin n-GaN films with low level of the 1/f noise”, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, G. Simin, X. Hu, and J. Yang, Electronics Letters, Vol. 37, No. 11, p. 720, May 2001. 20. “Generation-Recombination Noise in GaN/ GaAlN Heterostructure Field Effect Transistors”, S. L. Rumyantsev, N. Pala, M. S. Shur, and E. Borovitskaya, A. P. Dmitriev, M. E. Levinshtein, R. Gaska, M. Asif Khan, J. Yang, X. Hu, and G. Simin, IEEE Transactions on Electron Devices, Vol. 48, No. 3, p. 530, March 2001. 21. “Highly Doped Thin Channel GaN Metal Semiconductor Field Effect Transistors”, R. Gaska, M. S. Shur J. W. Yang, A. Tarakji, G. Simin, J. Deng, T. Werner, S. Rumyantsev and N. Pala, Appl. Phys. Lett., Vol. 78, No. 6, pp.769-771, Feb. 2001. 22. “Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors”, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, G. Simin, X. Hu, and J. Yang, Journal of Applied Physics, Vol. 88, No. 11, p. 6726, December 2000. 23. “SiO2 passivated Lateral Geometry GaN Transparent Schottky Barrier Detectors”, V. Adivarahan, G. Simin, J. W Yang, A. Lunev, Asif Khan, N. Pala, M. Shur, R. Gaska , Appl. Phys. Lett. Vol. 77, No. 6, pp. 863-865, Aug. 7 2000. 24. “Low frequency noise in GaAs heterodimensional junction field effect transistors”, N. Pala, M. Shur, J. Lu, Electronics Letters, vol. 36, No. 7, p. 675. March 2000. 25. “Low-Frequency Noise in AlGaN/GaN MOS-HFETs”, N. Pala, R. Gaska, S. Rumyantsev, M. S. Shur M. Asif Khan, X. Hu, G. Simin, and J. Yang, Electronics Letters, Vol. 36, No. 3, p. 268, Feb. 2000. 26. “High Temperature Performance of Ion Implanted Hetero-Dimensional JFETs", Electronics Letters, J. Lu, N. Pala, M. Shur, Vol. 35, No. 10, p.845, May 1999. CONFERENCE PRESENTATIONS 1. “Resonant Detection and Modulation of Terahertz Radiation by 2DEG Plasmons in GaN Grating-Gate Structures”, N. Pala, D. Veksler, A. Muravjov, W. Stillman, R. Gaska, M. S. Shur, IEEE Sensors 2007 The 6th IEEE Conference on Sensors, Atlanta, GA October 28-31, 2007 2. ”Nanometer Scale Complementary Silicon MOSFETs as Detectors of Terahertz and Sub-terahertz Radiation”, W. Stillman, F. Guarin, V. Yu. Kachorovskii, N. Pala, S. Rumyantsev, M.S. Shur and D. Veksler, IEEE Sensors 2007 The 6th IEEE Conference on Sensors, Atlanta, GA October 28-31, 2007 3. “Detection and Homodyne Mixing of Terahertz Gas Laser Radiation by Submicron GaAs/AlGaAs FETs”, D. Veksler, A. Muravjov, S. Rumyantsev, W. Stillman, N. Pala, and M. Shur, IEEE Sensors 2007 The 6th IEEE Conference on Sensors, Atlanta, GA October 28-31, 2007 4. “Properties of HfO2 Deposited on AlGaN/GaN Structures Using e-beam Technique”, V. Tokranov, S. Oktyabrsky, S.L. Rumyantsev, M.S. Shur, N. Pala, R. Jain, J. Yang and R. Gaska, The 34th International Symposium on Compound Semiconductors, Kyoto, Japan, October, 15-18, 2007 5. “Field Engineering using Drain Field Controlling Electrode for Ultra High Frequency GaN-based Power HEMTs”, A. Koudymov, N. Pala, Z. Yang, X. Hu, J. Deng, R. Gaska, G. Simin, and M. S. Shur , 7th International Conference of Nitride Semiconductors, Las Vegas, NV, September 16-21, 2007 6. “DC and Microwave performance of Recessed Gate III-N HFETs with InGaN etch-stop layer”, Z. Yang , N. Pala, J. Deng, X. Hu, A. Koudymov, G.Simin, J. Yang, R. Gaska, and M. S. Shur 7th International Conference of Nitride Semiconductors, Las Vegas, NV, September 16-21, 2007 7. “Gate Recess Technology on AlGaN/GaN HFET with InGaN as Etch-Stop Layer”, X. Hu, N. Pala, J. Deng, Z. Yang, G.Simin, J. Yang, R. Gaska, and M. S. Shur, 7th International Conference of Nitride Semiconductors, Las Vegas, NV, September 16-21, 2007 8. “GaN Heterodimensional Schottky Diode for THz Detection”, D. Veksler, N. Pala, F. Aniel, S. Rumyantsev, X. Hu, R.S.Q. Fareed, M. Shur , R. Gaska, IEEE Sensors 2006 The 5th IEEE Conference on Sensors, Daegu, Korea, October 22-25, 2006 9. “Terahertz Detection by GaN-based Field-Effect-Transistors and Heterodimensional Schottky Diodes”, D. B. Veksler, A. El Fatimy, N. Dyakonova, F. Teppe, W. Knap, N. Pala, R. Gaska, S. Rumyantsev, M. S. Shur, D. Seliuta, G. Valusis, S. Bollaert, A. Shchepetov,Y. Roelens, C. Gaquiere, D. Theronand A. Cappy International Workshop on Nitride Semiconductors 2006, Kyoto, Japan, October 22-27, 2006 10. “Detection and Emission of Terahertz Radiation by Nanometer-Size InGaAs and GaN Field-Effect-Transistors", D. B. Veksler, A. El Fatimy, N. Dyakonova, F. Teppe, W. Knap, N. Pala, S. Roumiantsev, M. S. Shur, S. Bollaert, A. Shchepetov, Y. Roelens, Ch. Gaquiere, D. Theron, and A. Cappy, 14th Int. Symp. Nanostructures: Physics and Technology", (2006) 11. “Low frequency noise of GaN-based UV LEDs”, S. Sawyer, S. L. Rumyantsev, N. Pala, M. S. Shur, Y. U. Bilenko, J. P. Zhang, X. Hu, A. Lunev, J. Deng and R. Gaska; MRS Fall Meeting, Symposium FF, November 28 - December 2, 2005, Boston, MA 12. “Optical and Current Noise of GaN Based Light Emitting Diodes”, S. Sawyer, S. L. Rumyantsev, N. Pala, M. S. Shur, Yu. Bilenko, J. P. Zhang, X. Hu, A. Lunev, J. Deng, and R. Gaska ,International Semiconductor Device Research Symposium, December 7-9, 2005, Bethesda, MD 13. “Low frequency noise of light emitting diodes”, S. L. Rumyantsev, S. Sawyer, N. Pala, M. S. Shur, Yu. Bilenko, J. P. Zhang, X. Hu, A. Lunev, J. Deng, and R. Gaska, SPIE Fluctuation and Noise Symp., May 23-26, 2005, Austin, TX , Noise in Devices and Circuits III, edited by Alexander A. Balandin, François Danneville, M. Jamal Deen, Daniel M. Fleetwood, Proceedings of SPIE Vol. 5844, pp.75-85, (2005) 14. “Ultraviolet-sensitive AlGaN-based surface acoustic wave devices”, D. Ciplys, M.S. Shur, N. Pala, A. Sereika, R. Rimeika, R. Gaska, Q. Fareed, IEEE Sensors 2004, Third IEEE International Conference on Sensors Edited by D.Rocha, P.M.Sarro and M.J.Vellekoop, pp. 1345 – 1348, October 24 - 27, 2004, Vienna University of Technology Vienna, Austria. 15. “Noise characteristics of 340nm and 280nm GaN-based light emitting diodes”, S. Sawyer, S. Rumyantsev, N. Pala, M.S. Shur, Yu. Bilenko, R. Gaska, P.V. Kosterin, and B.M. Salzberg, IEEE Lester Eastman Conference on High Performance Devices, August 2004, Troy, NY. 16. “Structural and Electrical Properties of CuS Thin Films on Flexible Substrates”, N. Pala, S.L. Rumyantsev, J. Sinius, M.S. Shur, R. Gaska, Proceedings of 12th International Symposium on Nanostructures:Physics and Technology, St. Petersburg, Russia, June 21–25, 2004. 17. “Deep Ultraviolet AlGaN Optoelectronic Transistor Arrays”, J. Deng, X. Hu, Q. Fareed, N. Pala, R. Gaska, M. Shatalov, G.Simin, A. Khan and M. Shur, MRS 8th Wide-Bandgap III-Nitride Workshop, September 29 – October 1, 2003, Richmond, VA. 18. “1/f Noise in GaN/AlGaN Heterostructure Field Effect Transistors From Linear Regime to Saturation”, S. Rumyantsev, N. Pala, M. Shur, M. Levinshtein, R. Gaska, X. Hu, M. Asif Khan, G. Simin, Proceedings of 17th International Conference on Noise and Fluctuations, pp. 361-364, August 18-22, 2003, Prague, Czech Republic. 19. Invited Paper “Generation-Recombination Noise in GaN and GaN-based Devices”, N. Pala, S. L. Rumyantsev, M. S. Shur, M. E. Levinshtein, M. Asif Khan, G. Simin, and R. Gaska, SPIE’s First International Symposium on Fluctuations and Noise, Santa Fe, New Mexico, 1–4 June 2003. 20. “Low frequency noise in Al0.4Ga0.6N thin films” , N. Pala, S. Rumyantsev, R. Gaska, M. Shur, J. Yang, X. Hu, G. Simin, M. A. Khan, IEEE Lester Eastman Conference on High Performance Devices, 2002 Proceedings., pp. 164 –171, 2002. 21. “Low frequency noise in GaN/AlGaN heterostructure field effect transistors at cryogenic temperatures”, Sergey L. Rumyantsev, Nezih Pala, Yanqing Deng, Wojciech Knap, Michael S. Shur, Elena Borovitskaya, Remis Gaska, Xuhong Hu, , Asif M. Khan, Grigory S. Simin, Jinwei Yang, Michael E. Levinshtein, MRS 2001 Fall Meeting, Boston, November 26-30, 2001. 22. “Thin n-GaN films with low level of the 1/f noise”, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, G. Simin, X. Hu, and J. Yang, Noise in physical Systems and 1/f Fluctuations ICNF 2001 16th International Conference, Gainesville, Florida, 22 - 25 October 2001. 23. “High Aluminum Content AlGaN Solar Blind Photodetectors” V. Adivarahan, G. Simin, G. Tamulaitis, R. Srinivasan, J. Yang, and M. Asif Khan, M. S. Shur, R. Gaska, S. L. Rumyantsev, N. Pala, ICNS-4: 4th International Conference on Nitride Semiconductors, session B3.4., Denver, Colorado, July 16-20, 2001. 24. “Noise properties of iron-filled carbon nanotubes”, S. Roumiantsev, R. Vajtai, N. Pala, B.Q. Weiz, M.S. Shur, L.B. Kish and P.M. Ajayan, Proceedings of 9th International Symposium Nanostructures: Physics and Technology, St Petersburg, Russia, pp. 418-420, 18–22 June 2001. 25. “Low Frequency noise in GaN Field Effect Transistors”, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, G. Simin, X. Hu, and J. Yang, MRS 2000 Fall Meeting, Boston, Massachusetts, November 27 - December 1, 2000. 26. “Recombination Generation Noise and Surface States in AlGaInN/GaN-based Field Effect Transistors”, S. Rumyantsev, M. Levinshtein, N. Pala, M. S. Shur, R. Gaska, A. Khan, S. Simin, and J. Yang, 42nd Proceedings of Electronic Materials Conference, p. 35, Denver, Colorado, June 21-23, 2000. 27. “Effect of the gate leakage current on noise properties of GaN/AlGaN HFETs”, S. L. Rumyantsev, N. Pala, S. Shur, M. E. Levinshtein, R. Gaska, M. Asif Khan, and G. Simin, Proceedings of International Workshop on Nitride Semiconductors; Tokyo, Japan : Inst. Pure & Appl. Phys, 2000, 1002, pp. 938-41. 28. “Low frequency noise in GaN-based transistors”, S. L. Rumyantsev, N. Pala, M. S. Shur, M. E. Levinshtein, R. Gaska, X. Hu, J. Yang, G. Simin, and M. Asif Khan, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122); Piscataway, NJ, IEEE, 2000, 274 pp. 257-64. 29. “Low-Frequency Noise in SiO2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates”, N. Pala, R. Gaska, M. Shur, J. W Yang and M. Asif Khan, Materials Research Society Fall99Symposium Proceedings Vol.595, pp. W11.9.1-6. 30. “High Temperature Performance of HeteroDimensional Junction Field Effect Transistors", N. Pala, J. Lu, B. Peatman, M. Hurt, M. Shur, APS Centennial Meeting, Atlanta, 20-26 March, 1999.