High Dielectric Constant Materials: Low Temperature Capacitors and Resistors

Goals of this research include the development of high dielectric constant thin films; this will assist in the development of better ceramic capacitors and resistors, decreasing the size and increasing the operating speed of microelectric devices. Research focuses on the creation of thin films on both Si wafers and PI flexible polymer sheets.

Capacitors

In hopes of developing high dielectric constant thin films for use in electronic packaging and high density storage, current studies are focused on TaOx, TiOx, SiOx, and BaTiO3. Through use of pulsed reactive DC Magnetron sputtering and RPIB (Reactive Partially Ionized Beam,) a technique developed by Prof. T.-M. Lu' group, thin films are deposited and then analyzed. These diagnostics include I-V and C-V testing (temperature dependency,) AFM and SEM (morphology,) XRD, XPS, RBS, electron microprobe, and high frequency (multi-GHz) testing.

Resistors

The drive to deposit thin films with resistivities higher than those of TaNx (resistivity=250 microOhm-cm) and MoSi2 (resistivity=1000 microOhm-cm) has led to the study of TaNxOy, MoSix, and MoSixOy. Deposition techniques include vacuum evaporation and reactive DC magnetron sputtering; diagnostics are similar to those for capacitor materials.