List of publications

  1. T. Detchprohm, T. Takeuchi, H. Amano, K. Hiramatsu, and I. Akasaki: “Crystal growth and properties of thick GaN layer on sapphire substrate”, Proc. Tenth Symp. Record of Alloy Semiconductor Physics and Electronics pp.121-126(1991).
  2. T. Detchprohm, K. Hiramatsu, N. Sawaki, and I. Akasaki: “Crystal growth and properties of thick GaN layer on sapphire substrate using ZnO layer”, Proc. Eleventh Symp. Record of Alloy Semiconductor Physics and Electronics pp.307-312(1992).
  3. T. Detchprohm, K. Hiramatsu, K. Itoh, and I. Akasaki: “Relaxation process of the thermal strain in the GaN/a-Al2O3 heterostructure and determination of the intrinsic lattice constant of GaN free from the strain”, Jpn. J. Appl. Phys., 31,L1454(1992).
  4. T. Detchprohm, H. Amano, K. Hiramatsu, and I. Akasaki: “Hydride vapor phase epitaxy growth of high quality GaN film using ZnO buffer layer”, Appl. Phys. Lett., 61,2688(1992).
  5. T. Detchprohm, K. Hiramatsu, N. Sawaki, and I. Akasaki: “Heteroepitaxy of GaN on sapphire substrate using ZnO buffer layer”, Proc. Sixth Topical Meeting on Crystal Mechanism pp.315-319(1993).
  6. K. Hiramatsu, T. Detchprohm, and I. Akasaki: “Relaxation Mechanism of thermal Stresses in the Heterostructure of GaN grown on Sapphire by Vapor Phase Epitaxy”, Jpn. J. Appl. Phys. 32,1528(1993).
  7. T. Detchprohm, H. Amano, K. Hiramatsu, and I. Akasaki: “The growth of thick GaN film on sapphire substrate by using ZnO buffer layer”, J. Cryst. Growth 128,384(1993).
  8. P. Hacke, T. Detchprohm, K. Hiramatsu, and N. Sawaki: “Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy”, Appl. Phys. Lett. 63,2676(1993).
  9. T. Detchprohm, K. Hiramatsu, N. Sawaki, and I. Akasaki: “The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates”, J. Cryst. Growth 137,170(1994).
  10. T. Detchprohm, K. Hiramatsu, N. Sawaki, and I. Akasaki: “Metalorganic vapor phase epitaxy growth and characteristics of Mg-doped GaN using GaN substrates”, J. Cryst. Growth 145,192(1994).
  11. K. Hiramatsu, T. Detchprohm, I. Akasaki, and H. Amano: “Effect of Buffer Layers in Heteroepitaxy of gallium Nitride”, J. Jpn. Ass. Cryst. Growth 21,S369(1994).
  12. J. Baur, K. Maier, M. Kunzer, U. Kaufmann, J. Schneider , H. Amano, I. Akasaki , T. Detchprohm, and K. Hiramatsu: “Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers” Appl. Phys. Lett. 64,857 (1994).
  13. P. Hacke, T. Detchprohm, K. Hiramatsu, N. Sawaki, K. Tadatomo, and K. Miyake : “Analysis of deep levels in n-type GaN by transient capacitane methods”,  J. Appl. Phys. 76,304(1994).
  14. M.R.H. Khan, H. Nakayama, T. Detchprohm, K. Hiramatsu, and N. Sawaki: “Schottky Barrier on n-Type Al0.14Ga0.86N Grown by Oganometallic Vapor Phase Epitaxy”, Jpn. J. Appl. Phys. 34(12A), 6375 (1995).
  15. M. R. H. Khan, T. Detchprohm, P. Hacke, K. Hiramatsu, N. Sawaki : “The barrier height and interface effect of Au-n-GaN Schottky diode” J. Phys. D: Appl. Phys. 28 ,1169(1995).
  16. T. Detchprohm, H. Nakayama, P. Hacke, K. Hiramatsu, and N. Sawaki: “The Analysis of the Shallow and Deep Levels pf Mg-doped GaN by DLTS and Hall Measurement”, Proc. Symp. On Wide Bandgap Semiconductors and Devices: The 188th Meeting; Electrochemical Society, Inc. 95-21,50(1995).
  17.  J. Baur, U. Kaufmann, M. Kunzer, J. Schneider , H. Amano, I. Akasaki , T. Detchprohm, and K. Hiramatsu: “Photoluminescence of residual transition metal impurities in GaN” Appl. Phys. Lett. 67, 1140 (1995).
  18. B. K. Meyer, D. Volm, A. Graber, H. C. Alt, T. Detchprohm, A. Amano, and I. Akasaki: “Shallow donors in GaN - the binding energy and the electron effective mass” Solid State Communications 95, 597 (1995).
  19. D. Volm, T. Streibl, B. K. Meyer, T. Detchprohm, H. Amano, and I. Akasaki: “Magneto-optical investigation of the neutral donor bound exciton in GaN” Solid State Communications 96, 53 (1995).
  20. H. Siegle, P. Thurian, L. Eckey, A. Hoffmann, C. Thomsen, B.-K. Meyer, H. Amano, I. Akasaki, T. Detchprohm, and K. Hiramatsu : “Raman and Photoluminescence Imaging of the GaN/Substrate Interface” DRIP VI (1995).
  21. D.M. Hofmann, D. Kovalev, B.K. Meyer, A. Hoffmann, L. Eckey, R. Heitz, T. Detchprohm, H. Amano, and I. Akasaki : “Properties of the Yellow Luminescence in Undoped GaN Epitaxial Layers” Phys. Rev B 52,16702 (1995).
  22. M. Drechsler, D. M. Hofmann, B. K. Meyer, T. Detchprohm, H. Amano, and I. Akasaki : “Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN” Jpn. J. Appl. Phys., 34, L1178 (1995).
  23. A. Hoffmann, L. Eckey, P. Maxim, J.-Chr. Holst, R. Heitz, D.M. Hofmann, D. Kovalev, G.  Steude, D. Volm, B.K. Meyer, T. Detchprohm, H. Amano, and I. Akasaki : “Dynamical Study of the Yellow Luminescence Band in GaN” Proc. Topical Workshop on III-V Nitrides, TWN’95, Nagoya, (1995).
  24. T Detchprohm, T Kuroda, K Hiramatsu, N Sawaki, and H Goto: “The Selective Growth in Hydride Vapor Phase Epitaxy of GaN”, Inst. Phys. Conf. Series 142,859(1996).
  25. H. Nakayama, P. Hacke, M. R. H. Khan, T. Detchprohm, K. Hiramatsu, and N. Sawaki: “Electrical Transport Properties of p-GaN”, Jpn. J. Appl. Phys. 35, L282 (1996).
  26. N Kaneda, T Detchprohm, K Hiramatsu, and N Sawaki: “Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane”, Jpn. J. Appl. Phys. 35(4B), L468 (1996).
  27. P. Hacke, H. Nakayama, T. Detchprohm, K. Hiramatsu, and N. Sawaki, “Deep levels in the upper band-gap region of lightly Mg-doped GaN” Appl. Phys. Lett. 68, 1362 (1996).
  28. H. Siegle, A. Hoffmann, L. Eckey, C. Thomsen, T. Detchprohm, K. Hiramatsu, T. Davis, and J.W. Steeds :”Depth-Profile of the Excitonic Luminescence in Gallium Nitride Layers”, Mat. Res. Soc. Symp. Proc. Vol.449, 677(1996).
  29. H. Siegle, P. Thurian, L. Eckey, A. Hoffmann; C. Thomsen, B.K. Meyer, T.  Detchprohm, K. Hiramatsu, H. Amano, and I.Akasaki : “Raman and Photoluminescence Imaging of the GaN/Substrate Interface” Inst. Phys. 149,97(1996).
  30. B. Monemar, J.P. Bergman, H. Amano, I. Akasaki, T. Detchprohm, K. Hiramatsu, and N. Sawaki: “Optical properties of GaN and related materials“ Proc. of  Int. Symp. on Blue Laser and Light Emitting Diodes, Ohmsha Ltd(Tokyo), 135 (1996).
  31. L. Eckey, L. Podlowski, A. G๖ldner, A. Haffmann, I. Broser, B.K. Meyer, D. Volm, T. Streibl, K. Hiramatsu, T. Detchprohm, H. Amano, and I. Akasaki: “Excitonic Structure of GaN epitaxial films grown by Hydride-Vapor-Phase Epitaxy” Inst. Phys. Conf. Ser. 142, 943 (1996).
  32. L. Eckey, J. Holst, A. Hoffmann, I. Broser, H. Amano, I. Akasaki, T. Detchprohm, and K. Hiramatsu: “Optical properties of highly excited GaN” 23rd Int. Conf. on the Physics of Semiconductors, published by World Scientific(Singapore), 2861 (1996).
  33. D. Volm, K. Oettinger, T. Streibl, D. Kovalev, M. Ben-Chorin, J. Diener, B.K. Meyer, J. Majewski, L. Eckey, A. Hoffmann, H. Amano, I. Akasaki, K. Hiramatsu, and T. Detchprohm: “Exciton fine structure in undoped GaN epitaxial films” Phys. Rev. B , 53, 16543 (1996).
  34. H. Siegle, P. Thurian, L. Eckey, A. Hoffmann, C. Thomsen , B. K. Meyer , H. Amano, I. Akasaki , T. Detchprohm, and K. Hiramatsu: “Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface” Appl. Phys. Lett. 68, 1265 (1996).
  35. L. Eckey, R. Heitz, A. Hoffmann, I. Broser, B. K. Meyer, K. Hiramitsu, T. Detchprohm, H. Amano, and I. Akasaki: “Relaxation and recombination dynamics in GaN/Al2O3 epilayers” Inst. of Physics Conference Series 142, 927 (1996).
  36. J. P. Bergman, B. Monemar, H. Amano, I. Akasaki, K. Hiramatsu, N. Sawaki, and T. Detchprohm: “Exciton dynamics in GaN” Institute of Physics Conference Series 142(5), 931 (1996).
  37. P. Thurian,L. Eckey,H. Siegle,J.-C. Holst, P. Maxim, R. Heitz,A. Hoffmann, C. Thomsen, I. Broser, K. Pressel, I. Akasaki, H. Amano, K. Hiramatsu, T. Detchprohm, D. Schikora, M. Hankeln, and K. Lischka: “Defects in Cubic and Hexagonal GaN Epilayers” Proc. of  Int. Symp. on Blue Laser and Light Emitting Diodes, Ohmsha Ltd(Tokyo), Chiba, Japan, We-14, pp. 180-183 (1996).
  38. H. Siegle, P. Thurian, L. Eckey, Kaczmarczyk, G., L. Filippides, A. Hoffmann, I. Broser, A.P. Litvinchuk, C. Thomsen, T. Detchprohm, and K. Hiramatsu: “Micro-Raman-Scattering Experiments of GaN Layers Deposited on Sapphire and SiC” Proc. of  Int. Symp. on Blue Laser and Light Emitting Diodes, Ohmsha Ltd(Tokyo), Chiba, Japan, We-P21, pp. 488-491 (1996).
  39. L. Eckey, J. Holst, A. Hoffmann, I. Broser, H. Amano, I. Akasaki, T. Detchprohm, and K. Hiramatsu : “Optical Properties of Highly Excited GaN” 23rd Int. Conf. Phys. Semicond., Berlin, Germany, ed. M. Scheffler, R. Zimmermann, World Scientific Publishing, Singapore, pp. 2861-2864 (1996).
  40. G. Denninger, R. Beerhalter, D. Reiser, K. Maier, J. Schneider, T. Detchprohm, and K. Hiramatsu: “Shallow donors in GaN: A magnetic double resonance investigation” Solid State Comm. 99,347(1996).
  41. Y. Ohuchi, K. Tadatomo, H. Nakayama, N. Kaneda, T. Detchprohm, K. Hiramatsu, and N. Sawaki: “New Dopant Precursors for n-type and p-type GaN”, J. Cryst. Growth 170(1-4), 325 (1997).
  42. Mohammad Rezaul Huque Khan, Hisashi Nakayama, Theeradetch Detchprohm, Kazumasa Hiramatsu, and Nobuhiko Sawaki : “A study on barrier height of Au---AlxGa1 − xN Schottky diodes in the range 0 ≤ x ≤ 0.20 ” Solid-State Electron. 41,287(1997).
  43. A. Hoffmann, L. Eckey, P. Maxim, J.C. Holst, R. Heitz, D.M. Hofmann., D. Kovalev, G. Stevde, D. Volm, B.K. Meyer, T. Detchprohm, K. Hiramatsu, H. Amano, and I. Akasaki: “Dynamical study of the yellow luminescence band in GaN” Solid State Electronics 41, 275 (1997).
  44. L. Eckey, J. Holst, A. Hoffmann, I. Broser, T. Detchprohm, and K. Hiramatsu : “Gain Spectroscopy of HVPE-Grown GaN” Mat. Res. Soc. Internet J. Nitride Semic. Res., Vol 2 (1997).
  45. B. Monemar, J. P. Bergman, T. Lundstrφm, C. I. Harris, H. Amano, I. Akasaki, T. Detchprohm, K. Hiramatsu, and N. Sawaki : “Optical characterisation of GaN and related materials” Solid-State Electron. 41,181(1997).
  46. B. Monemar, J. P. Bergman, I. A. Buyanova, H. Amano, I. Akasaki, T. Dethprohm, K. Hiramatsu, and N. Sawaki : “The excitonic bandgap of GaN: dependence on substrate” Solid State Electron. 41, 239 (1997).
  47. L. Eckey, J. Holst, A. Hoffmann, I. Broser, H. Amano, I. Akasaki, T. Detchprohm, and K. Hiramatsu : “Optical Properties of Highly Excited GaN” J. Lumin. 72-74, 59 (1997).
  48. P. Hacke, H. Okushi, T. Kuroda, T. Detchprohm, K. Hiramatsu, and N. Sawaki: “Characterization of mid-gap states in HVPE and MOVPE-grown n-type GaN” J. Cryst. Growth 189-190(1998) pp. 541-545.
  49. H. Amano, M. Iwaya, N. Hayashi, T. Kashima, M. Katsuragawa, H. Katoh, T. Takeuchi, T. Detchprohm, S. Yamaguchi, C. Wetzel, and I. Akasaki: “Defect and stress control in group III nitrides using low temperature interlayers”, Proceedings of the Third Symposium on Atomic-scale Surface and Interface Dynamics, Fukuoka, (1999-3).
  50. C. Pernot, A. Hirano, M. Iwaya, T. Detchprohm, H. Amano, and I. Akasaki: “Low-Intensity Ultraviolet Photodetectors Based on AlGaN”, Jpn. J. Appl. Phys. 38,L487(1999).
  51. T. Takeuchi, T. Detchprohm, M .Yano, M. Yamaguchi, N. Hayashi, M. Iwaya, K. Isomura, K. Kimura, H. Amano, I. Akasaki, Yw. Kaneko, S. Watanabe, Y. Yamaoka, R. Shioda, T. Hidaka, Ys. Kaneko, and N. Yamada: “Fabrication and Characterization of GaN-based Laser Diode Grown on Thick n-AlGaN Contact Layer”, Phys. Stat. Sol. (a) 176,31(1999).
  52. T. Takeuchi, T. Detchprohm, M. Iwaya, N. Hayashi, K. Isomura, K. Kimura, M. Yamaguchi, H. Amano, I. Akasaki, Yw. Kaneko, R. Shioda, S. Watanabe, T. Hidaka, Y. Yamaoka, Ys. Kaneko, and N. Yamada : ” Improvement of far-field pattern in nitride laser diodes” Appl. Phys. Lett. 75 (1999) pp. 2960-2962
  53. C. Pernot, A. Hirano, M. Iwaya, T. Detchprohm, H. Amano, I. Akasaki: “Improvement of Low-Intensity Ultraviolet Photodetectors Based on AlGaN with Low Threading Dislocation Density" Phys. Stat. Sol. (a)176,147(1999).
  54. C. Wetzel, M. Kasumi, T. Detchprohm, T. Takeuchi, H. Amano, and I. Akasaki :”Discrete Stark-Like Ladder in Peizoelectric GaInN/GaN Quantum Wells” Phys. Stat. Sol. (b) 216,399(1999).
  55. S. Kamiyama, T. Takeuchi, T. Detchprohm, M. Iwaya, N. Hayashi, K. Isomura, K. Kimura, T. Sato, H. Amano, I. Akasaki, Yw. Kaneko, and N. Yamada : “GaN-based semiconductor laser with stable single transverse-mode operation” Proc. 2nd Japan-Korea Joint Workshop on Short-Wavelength Semiconductor Optoelectronic Device and Materials, Sep. 30-Oct. 2, 1999, Chiba, Japan (1999).
  56. C. Wetzel, T. Detchprohm, T. Takeuchi, H. Amano, and I. Akasaki : “Piezoelectric Polarization in the Radiative Centers of GaInN/GaN Quantum Wells and Devices” J. Elec. Mat. 29,252(2000).
  57. T. Takeuchi, T. Detchprohm, M. Iwaya, N. Hayashi, K. Isomura, K. Kimura, M. Yamaguchi, S. Yamaguchi, C. Wetzel, H. Amano, I. Akasaki, Y.W. Kaneko, R. Shioda, S. Watanabe, T. Hidaka, Y. Yamaoka, Y.S. Kaneko, and N. Yamada : “Nitride-Based Laser Diodes using Thick n-AlGaN Layers” J. Elec. Mat. 29,302(2000).
  58. M. Iwaya, T. Kashima, R. Nakamura, T. Detchprohm, S. Kamiyama, S. Yamaguchi, S. Nitta, M. Kariya, H. Amano, and I. Akasaki : “Crack-free, thick and high-quality AlxGa(1-x)N using low-temperature　interlayer” Proc. The Fourth Symp. On Atomic-sacle Surface and Interface Dynamics, March 2-3, 2000, Tsukuba, Japan.
  59. I. Akasaki, S. Kamiyama, T. Detchprohm, T. Takeuchi, and H. Amano : “Growth of crack-free thick AlGaN layer for achievement of single lateral　mode operation of GaN-based laser diodes” Proc. The Fourth Symp. On Atomic-sacle Surface and Interface Dynamics, March 2-3, 2000, Tsukuba, Japan.
  60. S. Nitta, S. Yamaguchi, M. Kariya, M. Iwaya, (a)T. Kashima, R. Nakamura, T. Detchprohm, S. Kamiyama, H. Amano and I. Akasaki : “Mass transport of GaN and reduction of threading dislocations” Proc. The Fourth Symp. On Atomic-sacle Surface and Interface Dynamics, March 2-3, 2000, Tsukuba, Japan.
  61. M. Iwaya, S. Terao, N. Hayashi, T. Kashima, T. Detchprohm, H. Amano, I. Akasaki, A. Hirano, and C. Pernot: “ High-Quality AlxGa1-xN Using Low Temperature Interlayer And Its Application to UV Detector”, Mat. Res. Soc. Symp. Vol595,W1.10.1(2000).
  62. A. Hirano, C. Pernot, Motoaki Iwaya, T. Detchprohm, Hiroshi Amano, and Isamu Akasaki: ”Detailed feasibility study on a flame detector using AlGaN photosensors“ Proc. SPIE Int. Soc. Opt. Eng. 3948, 284 (2000).
  63. I. Akasaki, S. Kamiyama, T. Detchprohm, T. Takeuchi, and H. Amano: “Growth of Crack-Free Thick AlGaN Layer and Its Application to GaN-Based Laser Diode”. Mat. Res. Soc. Symp. Vol.595, W6.8.1(2000).
  64. M. Yano, T. Detchprohm, R. Nakamura, S.Sano, H. Amano, and I. Akasaki: “Heteroepitaxy and characterization of GaN with Low Dislocation Density on Periodically Grooved Sapphire Substrate”, Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo,2000) pp.292-295.
  65. R. Mouillet, C. Pernot, A. Hirano, M. Iwaya, T. Detchprohm, H. Amano, and I. Akasaki: “Optical Property of an AlGaN/GaN Hetero-Bipolar-Phototransistor”, Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo,2000) pp.973-976.
  66. A.Hirano, C. Pernot, M. Iwaya, T. Detchprohm, H. Amano, and I. Akasaki: “Solar-Blind AlGaN PIN Hetero Junction Photodiode” Proc. Int. Workshop on Nitride Semiconductors, IWN2000, Nagoya, Japan (IPAP, Tokyo,2000) pp.911-914.
  67. I. Akasaki , T. Detchprohm, M. Yano, S. Sano, R. Nakamura, S. Michiduki, T. Nakamura, and H. Amano: “Threading Dislocation Density Reduction of GaN in Heteroepitaxy Lateral Overgrowth using Periodically Grooved Substrates”, Proc. 2000 Japan-Korea Joint Workshop Short-Wavelength Semiconductor Optoeletronic Devices and Materials, Cheju, Korea, October 30,2000, pp.67-70
  68. T. Detchprohm, M. Yano, S. Sano, R. Nakamura, S. Michiduki, T. Nakamura, H. Amano, and I. Akasaki: “Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystal” Jpn. J. App. Phys. Lett. 40,L16(2001).
  69. T. Detchprohm, M. Yano, S. Sano, R. Nakamura, S. Michiduki, T. Nakamura, H. Amano, and I. Akasaki: “Heteroepitaxy and Characterization of Low-Dislocation-Density GaN Single Crystal on Periodically Grooved Substrates”, Proc. MRS Fall 2000, Boston, 639(2001)G5.7.
  70. T. Detchprohm, M. Yano, S. Sano, R. Nakamura, S. Mochiduki, T. Nakamura, H. Amano, and I. Akasaki: “Low-Dislocation-Density GaN Single Crystals Grown by Direct Heteroepitaxial-Lateral-Overgrowth Technique using Periodically Grooved Substrates”, Proc. The Fifth Symp. On Atomic-sacle Surface and Interface Dynamics, March 1-2, 2001, Tokyo, pp.53-57.
  71. A. Hirano, C. Pernot, M. Iwaya, T. Detchprohm, H. Amano, and I. Akasaki:” Demonstration of flame detection in room light background by solar-blind AlGaN pin photodiode” Physica Status Solidi A 188, 293 (2001).
  72. H. Amano, S. Kamiyama, T. Detchprohm, T. Sato, M. Iwaya, S. Nitta, S. Terao, and I. Akasaki: “Transverse-mode control in GaN-based laser diodes” Proc. SPIE Int. Soc. Opt. Eng. 4283, 67 (2001).
  73. T. Detchprohm, S. Sano, S. Mochizuki, S. Kamiyama, H. Amano, and I. Akasaki : “Growth Mechanism and Characterization of Low-Dislocation-Density AlGaN Single Crystals Grown on Periodically Grooved Substrates” Phys. Stat. Sol. (a)188,799(2001).
  74. H. Amano, M. Iwaya, S. Nitta, S. Terao, T. Detchprohm, S. Kamiyama, I. Akasaki, T. Riemann, J. Christen, A. Kaschner, A. Hoffmann, C. Thomsen : "Control of stress and defects in Nitrides", The Thirteenth International Conference on Crystal Growth, 04p-SB2-01, Kyoto (2001).
  75. Robert Mouillet, Akira Hirano, Motoaki Iwaya, Theeradetch Detchprohm, Hiroshi Amano and Isamu Akasaki : “Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer” Jpn. J. Appl. Phys. 40,L498 (2001).
  76. S. Sano, T. Detchprohm, S. Mochizuki, S. Kamiyama, H. Amano and I. Akasaki : “Low-dislocation-density GaN and AlxGa1-xN (x<=0.13) grown on grooved substrates” J. Cryst. Growth 235,129(2002).
  77. S. Mochizuki, T. Detchprohm, S. Sano, T. Nakamura, H. Amano, and I.Akasaki: ”Reduction of threading dislocation density in AlXGa1-XN grown on periodically grooved substrates” J. Cryst. Growth 237-239,1065(2002).
  78. Shigekazu Sano, Theeradetch Detchprohm, Masahiro Yano, Ryo Nakamura, Shingo Mochizuki, Hiroshi Amano, and Isamu Akasaki: “Low-dislocation-density AlxGa1−xN single crystals grown on grooved substrates” Materials Science and Engineering B 93, 197 (2002).
  79. W. V. Schoenfeld, T. Johnson, C. Eiting, T. Detchprohm, and M. G. Brown: “Design and development of AlInGaN LED devices for the high brightness market” SPIE Proceeding of Photonic West 2003.
  80. C. Weztel, T. Salagaj, T. Detchprohm, P. Li, and J. Nelson, “Development of Green LED in UOE” Meijo Symposium on Nitride Semiconductors June 2, 2003 , Meijo University, Nagoya, Japan
  81. C. Wetzel, T. Salagaj, T. Detchprohm, P. Li, and J.S. Nelson, “GaInN/GaN growth optimization for high-power green light-emitting diodes”, Appl. Phys. Lett. 85,866(2004).
  82. C. Wetzel, T. Detchprohm, P. Li, and J.S. Nelson, “Analysis of the wavelength-power performance roll-off in green light emitting diodes” phys. stat. sol. (c), 1(10) 2421-4 (2004).
  83. C. Wetzel, P. Li, T. Detchprohm, and J.S. Nelson, “Optimization for green and deep green GaInN/GaN light emitting diodes” phys. stat. sol. (c), 2(7) 2871-3 (2005).
  84. C. Wetzel, Y. Xia, T. Detchprohm, P. Li, and J.S. Nelson : “Development of High Power Green Light Emitting Diode Dies in Piezoelectric GaInN/GaN” Proc. SPIE Int. Soc. Opt. Eng. 5739, 1 (2005).
  85. C. Wetzel and T. Detchprohm, “Development of High Power Green Light Emitting Diode Chips” Internet Journal of Nitride Semiconductor Research, Vol.10, Art. 2 (2005).