Jingzhou Xu

Education
Ph.D. (Institute of Physics, Chinese Academy of Science)

 

Career Highlights:
Jingzhou Xu joined the THz group in Rensselaer Polytechnic Institute as a postdoctoral research associate in 2002. Since he started his Ph. D thesis research in 1996, he spent more than 8 years in the research of THz wave science and technology. His research interests include: 2D THz wave imaging, THz wave microscopy, THz wave non-destructive inspection, and high efficient THz source and sensor development.

Research Areas:
THz science and technology, including THz spectroscopy, THz imaging and THz wave interaction with materials.

Select Publications
Jingzhou Xu, and X. C. Zhang, "Circular involute stage," Opt. Lett.29, 2082-2084 (2004).

Jingzhou Xu, Zhenguo Lu, and X. C. Zhang,"Compact involute optical delay line," Electron.Lett.40, 1218-1219 (2004).

Nicholas Karpowicz, Hua Zhong, Jingzhou Xu, Kuang-I Lin, Jenn-Shyong Hwang, X.-C. Zhang, "Comparison between pulsed terahertz time-domain imaging and continuous wave millimeter-wave imaging," Semicond. Sci. Technol.20, 1-7 (2005).

Kai Liu, Jingzhou Xu, and X. C. Zhang, "Broadband terahertz wave detection with GaSe crystals," Appl. Phys. Lett.85, 863-865 (2004). Virtual J. Ultrafast Sci. Vol. 4, Iss. 9(2004).

Hua Zhong, Jingzhou Xu, Xu Xie, Tao Yuan, Ron Reightler, Eric Madaras, and X.-C. Zhang, " Non-destructive defect identification by terahertz tomography,"IEEE Sensors J. (Special Issue on for Industrial Process Tomography) 5,203-208 (2005).

Yanqing Deng, Roland Kersting, Jingzhou Xu, Ricardo Ascazubi, Xi-Cheng Zhang, Michael S. Shur, Remis Gaska, Grigory S. Simin, M. Asif Khan, Victor Ryzhii, "Millimeter wave emission from GaN high electron mobility transistor," Appl. Phys. Lett. 84, 70-72 (2004).

Jingzhou Xu, Tao Yuan, Samuel Mickan, X. -C. Zhang, "Limit of Spectral Resolution in Terahertz Time-Domain Spectroscopy," Chin. Phys. Lett.20,1266 (2003).

Kai Liu, Arunas Krotkus, K. Bertulis, Jingzhou Xu,and X.-C. Zhang, "Terahertz radiation from n-type GaAs with Be-doped low-temperature-grown GaAs surface layers," J. Appl.Phys.94, 3651 (2003).

Jingzhou Xu and X.-C. Zhang, "Optical Rectification in an Area with a Diameter Comparable to or Smaller than the Center Wavelength of Terahertz Radiation," Optics Letters 27,1067 (2002).

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