Michael Shur
Patricia W. and C. Sheldon Roberts '48 Professor of Solid State Electronics
Professor, Physics, Applied Physics and Astronomy
Director, Center for Broadband Data Transport Science and Technology

Education:
M.S., Electrical Engineering, St. Petersburg Electrotechnical Institute, 1965
Ph.D., Physics, A. F. Ioffe Institute of Physics and Technology, St. Petersburg, Russia, 1967
Dr. Sc., Physics and Mathematics, A. F. Ioffe Institute of Physics and Technology, 1992

Career Highlights:
Michael Shur joined RPI in 1996. He has held research or faculty positions at the University of Virginia as the John Money Professor and the Director of Applied Electrophysics Laboratories, A.F. Ioffe Institute, Cornell, and the University of Minnesota. He is Fellow of IEEE, IET,APS, ECS, AAAS, and Vice-President for publications of IEEE Sensor Council. He received the van der Ziel Award from the International Semiconductor Device Research Symposium in 1999, the Senior Humboldt Research Award in 2002, IEEE Donald Fink Best Paper Award in 2007, and IEEE Kirchmayer Award in 2007.

Research Areas:
Solid State Devices
Shur's work with plasma wave excitation in submicron field effect transistors (FET) and related device structures should allow his lab to develop a new generation of solid-state terahertz (THz) tunable devices that will support numerous applications in biotechnology, microelectronics, and defense. His research has shown that a short channel field effect transistor (FET) has a resonance response to electromagnetic radiation at the plasma oscillation frequencies of the two dimensional electrons in the device. The devices which use this resonance response should operate at much higher frequencies than conventional, transit-time limited devices — in the terahertz range — since the plasma waves propagate much faster than electrons. Recently, his team reported on a resonant detector operating in the terahertz range using an AlGaAs/GaAs 0.15 micron gate FET.

Select Publications:
M. S. Shur, "Low Ballistic Mobility in Submicron High Electron Mobility Transistors," IEEE EDL, September (2002).

W. Knap, Y. Deng, S. Rumyantsev, J.-Q. Lu, M. S. Shur, C. A. Saylor, L. C. Brunel, "Resonant Detection of Sub-Terahertz Radiation by Plasma Waves in the Submicron Field Effect Transistor," Appl. Phys. Lett. Vol. 80, No. 18, pp. 3433-3435 (2002).

Xomalin Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, M. P. Lilly, J. A. Simmons, J. L. Reno, P. J. Burke, J. P. Eisenstein, Wojtek Knap, Y. Deng, S. Rumyantsev, J.-Q.Lü, M. S. Shur, "THz Detection by Resonant 2-D Plasmons in Field Effect Devices in Proceedings of WOFE-02," IJHSES, to be published.

V. Ryzhii, I. Khmyrova, and M. S. Shur, "Terahertz Photomixing in Quantum Well Structures Using Resonant Excitation of Plasma Oscillations," J. Appl. Phys. Vol. 91, 1875 (2002).

V. Ryzhii, I. Khmyrova, and M. S. Shur, "Resonant Detection and Frequency Multiplication of Terahertz Radiation Utilizing Plasma Waves in Resonant-tunneling Transistors," J. Appl. Phys. Vol. 88, No. 5, 2868-2871, 1 September (2000).

J.-Q. Lü, M. S. Shur, J. L. Hesler, L. Sun, and R. Weikle, "A Resonant Terahertz Detector Utilizing a High Electron Mobility Transistor," IEDM '98 Technical Digest, San Francisco, CA, December (1998).

M. Dyakonov and M. S. Shur, "Ballistic Transport in High Mobility Semiconductor," The Physics of Semiconductors, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore 1996), 145-148 (1996).

M. Dyakonov and M. S. Shur, "Shallow Water Analogy for a Ballistic Field Effect Transistor. New Mechanism of Plasma Wave Generation by DC Current," Phys. Rev. Lett. Vol. 71, No. 15, pp. 2465-2468, Oct. 11 (1993).

K. Lee and M. S. Shur, "Impedance of Thin Semiconductor Films," J. Appl. Phys. Vol. 54, No. 7, 4028-4034, July (1983).

A. A. Kastalsky and M. S. Shur, "Conductance of Small Semiconductor Devices," Solid State Comm. Vol. 39, No. 6, 715 (1981).

M. S. Shur, "Ballistic Transport in Semiconductor with Collisions," IEEE Trans. Electron. Devices, Vol. ED-28, No. 10, 1120-1130, October (1981).

M. S. Shur and L. F. Eastman, "Ballistic Transport in Semiconductors at Low-Temperatures for Low Power High Speed Logic," IEEE Transactions Electron Devices, Vol. ED-26, No. 11, 1677-1683, November (1979).

Contact Information:
Michael Shur
Patricia W. and C. Sheldon Roberts '48 Professor of Solid State Electronics
Professor, Physics, Applied Physics and Astronomy
Director, Center for Broadband Data Transport Science and Technology
Rensselaer Polytechnic Institute
110 8th Street
Troy, NY 12180-3590 USA

(518) 276-2201
shurm@rpi.edu
Personal Web Page: http://nina.ecse.rpi.edu/shur

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