Rensselaer Research ReviewWinter 2008
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Band diagram of conventional GaInN/GaN active region
Band diagram of conventional GaInN/GaN active region and new polarization-matched GaInN/GaInN active region of a light-emitting diode.
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Benefits and Applications

The benefits seen by testing the new GaInN/GaInN LED were consistent with theoretical simulations showing polarization matching reducing electron leakage and efficiency droop. 

Schubert expects that a new wave of lighting devices based on LEDs and solid-state lighting will supplant the common light bulb in coming years, leading to vast environmental, energy, and cost benefits as well as innovations in healthcare, transportation systems, digital displays, and computer networking.

Publication and Funding

Results of the study are explained in a paper published online by Applied Physics Letters

Along with Schubert, co-authors on the paper include Rensselaer physics, Future Chips, and electrical engineering graduate students Jiuru Xu, Martin F. Schubert, and Ahmed N. Noemaun; Rensselaer Future Chips research assistant Di Zhu; Jong Kyu Kim, research assistant professor of electrical, computer, and systems engineering at Rensselaer; along with Samsung Electro-Mechanics researchers Min Ho Kim, Hun Jae Chung, Sukho Yoon, Cheolsoo Sone, and Yongjo Park. 

Funding for the project was contributed by Samsung Electro-Mechanics, the U.S. National Science Foundation, the Rensselaer Smart Lighting Engineering Research Center, Sandia National Laboratories, Rochester Institute of Technology, U.S. Department of Energy, U.S. Department of Defense, Magnolia Optics, Crystal IS, Troy Research Corporation, and New York state. 

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