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2009 PUBLICATIONS

  • Cho Jaehee et al, "Effect of chip geometry on breakdown voltage of GaInN LEDs," Electronics Letters
  • Cho Jaehee et al, "Color tunable LEDs with modified pulse-width modulation," PSS
  • Chung HJ et al, "Improved performance of GaN-based blue LEDs with InGaN-GaN multilayer barriers," APL
  • Dai Qi et al, "IQE and nonradiative recombination coefficient of GaInN-GaN MQWs with different dislocation densities," APL
  • Mirhosseini Roya et al, "Improved color rendering and luminous efficacy in white LEDs by dual blue active region," Optics Express
  • Schubert MF et al, "Electroluminescence induced by photoluminescence excitation in GaInN-GaN LEDs," APL
  • Yan Xing et al, "Refractive-index matched indium-tin-oxide electrodes for LCDs," JJAP
  • Poxson DJ et al, "Broadband omnidirectional antireflection coatings optimized by genetic algorithm," Optics Letters
  • Schubert MF et al, "On resonant optical excitation and carrier escape in GaInN-GaN quantum wells," APL
  • Xu J et al, "Reduction in efficiency droop in polarization matched GaInN/GaInN LEDs ," APL
  • Zhu D et al, "The origin of the high diode ideality factors in GaInN GaN multiple quantum well LEDs," APL

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    110 8th St., Troy, NY 12180-3590 USA. (518) 276-6000
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  • Last Update: Mar 10, 2011