2002 PUBLICATIONS

Chernyak et al, "Influence of electron injection on performance of GaN photodetectors," APL

Gessmann et al, "Ohmic contact technology in III nitrides using polarization effects of cap layers," JAP

Gessmann et al, "Ohmic contacts to p-type GaN mediated by polarization fields in thin InGaN capping layers," APL

Gessmann et al, "Ohmic contacts to p-GaN using InGaN capping layers," J Elec Materials

Guo & Schubert, "Erratum - Current crowding in GaN-InGaN light emitting diodes on insulating substrates," JAP V90 p4191 (2001)

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