Peter D. Persans 
Professor of Physics; Department Associate Head
Education:
B.S., Physics, Polytechnic Institute of New York, 1975.
S.M., Physics, University of Chicago, 1977.
Ph.D., Physics, University of Chicago, 1982 (Thesis advisor: H. Fritzsche).
Career Highlights:
Research Physicist: Exxon Corporate Research (1981-1986).
Physics Faculty: Rensselaer Polytechnic Institute (1986-present).
Research Interests:
Optical and structural properties of amorphous, nanocrystalline, and quantum dot semiconductor materials.
Selected Publications:
P. Persans, "Dual Beam Photoconductivity Modulation Spectroscopy in aSi:H", Philosophical Magazine B46, 435471 (1982).
H. Yükselici, P. D. Persans, T. M. Hayes, “Optical studies of growth of Cd1-xZnxS nanocrystals in borosilicate glass”, Phys. Rev. B 52 11763 (1995).
G. Dalakos, J. Plawsky, and P. D. Persans, "Topographic evolution during deposition of plasma-deposited hydrogenated silicon on glass", Phys Rev B 72 205305 (2005).
C. Wetzel, M. Zhu, J. Senawiratne, T. Detchprohm, P.D. Persans, L. Liu, E. A. Preble, and D. Hanser, "Light Emitting Diode Development on Polar and Non-Polar GaN Substrates," J. Cryst. Growth 310, 3987-91 (2008).
Véronique Vuitton, Buu N Tran, Peter D Persans, J. P. Ferris, "Determination of the Complex Refractive Indices of Titan Haze Analogs using Photothermal
Deflection Spectroscopy", Icarus (2009) - in press.
Contact:
(518) 276-2934
persap@rpi.edu
Home Page: http://www.rpi.edu/~persap/
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