Conduction Electrons and Current - 40

This page is more technical than those that proceeded it, although the math used is limited to algebra.  If you have never taken a physics course and/or are reading this module just for the concepts, you may skip the next two pages without missing concepts needed on later pages.  If, on the other hand, you are interested in a more exact description of the conductivity of semiconductors (or if your teacher has assigned this reading), continue on with this page.
 
 

This is where more quantitative material will go when I have a chance.  Covering the free electron model and the Drude model would be nice.  For now, skip this page

Many introductory physics texts discuss the microscopic origins of electric current and what factors determine the amount of current that will flow through a given wire.  The animation below briefly recounts the key points.  The reader is encouraged to grab his or her favorite physics text to obtain more details.

A.  Representative conduction electrons in a wire.  (A real wire contains too many electrons to show; we have included only enough electrons to give a sense of what occurs.)
B.  In the absence of an electric field, electrons move randomly through the wire.
C.  In a sense, applying a potential difference to the wire is like tipping the wire.  The electrons experience a net force toward the higher potential, resulting in a net velocity directed toward that higher potential.  Much random motion, however, remains.  The net velocity is called the drift velocity vd of the electrons.
D.  All of the charge DQ in the shaded volume DVol of the figure will pass through the highlighted cross section of the wire in a time Dt.  The average current through that cross section of the wire can be found from DQ/Dt.
E.  DQ is found by counting the number of charge carriers (in this case, the number of electrons) and multiplying that number by the charge q of an individual charge carrier (in this case, e, the charge on an electron).  The number of charge carriers, however, is not a property solely of the material but depends on the size DVol.  We therefore separate the number of charge carriers into the charge carrier number density n, which is a property of the material, and the volume DVol.
F.  The amount of time required for the electrons in the shaded volume to pass through the cross-section is related to the drift velocity of the electrons.  On average, electrons in a volume of depth Dx will all pass through the cross-section in a time Dt = Dx/vd.
G.  Putting the results of the previous two steps together, we arrive at our final expression for the current through this wire.
 
 
 
 

We can now examine the expression for current through a wire

I = nqAvd.
to determine the origin of the temperature dependence of conduction.  q, the magnitude of the charge of a single charge carrier is typically equal to e, the charge on an electron (1.6 x 10-19 C).  This constant of nature is certainly not a temperature-dependent value.  A is the cross-sectional area of the wire, which is generally unchanging.  vd is the drift velocity of the charge carriers.  It is primarily controlled by the applied voltage, although it also depends the molecular structure of the wire.  (In an ohmic device this velocity is directly proportional to applied voltage and thus provides the linear relationship between current and applied voltage.)  The drift velocity is also slightly temperature-dependent:  an increase in temperature causes atoms to vibrate more, which increases the number of collisions electrons have on their way through the wire and decreases the drift velocity.  But the parameter of greatest import for semiconductors is n, the number density of charge carriers in the material.  Increasing the temperature of a semiconductor can produce a large increase in this density and thereby increase the current through the semiconductor significantly.  (This increase in n far overwhelms any decrease in vd the temperature increase might cause.)  Conductors, on the other hand, see no significant change in n when the temperature increases.  The only temperature-dependent effect in conductors is the change in vd, so the current through a conductor decreases as temperature increases.

The illustrations above show a material with all atoms in their ground states.  Such ground states exist only when the temperture is at absolute zero.  Most electronics are used and studied at temperatures well above absolute zero.  At these higher temperatures, electrons regularly jump up to higher energy levels by absorbing thermal energy.  Electrons in the conduction band are called conduction electrons.  The more conduction electrons available, the greater the conductivity becomes.  Of course, if one could increase the conductivity of a material just by taking a bigger piece (with its greater number of electrons), conductivity wouldn't be a very good way to characterize a material.  Instead, we divide the total number Ne of conduction electrons in a material by the total volume Vol of the material to get the number density ne of conduction electrons.  The number density for a given material depends on both the thermal energy available (related to the temperature of the material) and the energy needed to make that band jump (equal to the band gap).  If the bandgap is narrow, enough electrons can make it into the conduction band to allow current to flow at room temperature.  Click on the image to the right to see an animation of this effect.  The amount of current that flows at room temperature through pure these narrow-bandgap insulators is generally pretty low, so they were called semiconductors.  You may have learned in a physics class that resistance increases (and conductivity decreases) as a resistor gets hot.  This is only true of conductors.  Increasing the temperature of pure semiconductors will increase the number of conduction electrons and thus increase the conductivity of the device!
 

prev
What is special about the resistivity of semiconductors?
Go to the next page to find out!
next

Copyright © 2003 Doris Jeanne Wagner and Rensselaer Polytechnic Institute.  All Rights Reserved.

Resistivity, I'm Talking about Resistivity - 45

Most introductory texts focus on resistance and resistivity rather than on conductivity.  The resistance R of a device is defined as the ratio of the voltage V applied to the device to the current I that flows through the device due to that voltage:

R = V/I
The resistance of a device depends on its composition, on its geometry, and, sometimes, on how it is used.  Increasing the length of the current's path makes it harder to push the current through, so resistance increases as the length of a device increases.  Making the path wider, however, allows the current to flow more freely.  Resistance decreases as the cross-sectional area increases.
 

The number of electrons that make it to the conduction band depends on both the thermal energy available (related to the temperature) and the energy needed to make that band jump (equal to the band gap).  Studies of thermodynamics have shown that the thermal energy U available at a specific temperature T is given by

U = 3/2 kT,
where T is measured in degrees Kelvin, and kB is the Boltzmann constant.  Room temperature is roughly 293° Kelvin, so the energy available to the electrons at room temperature is xxxx electronVolts.  Silicon has a band gap of xxxxx eV, which means the population of the conduction band is pretty poor at room temperature.  Thus pure silicon is a poor conductor at room temperature.
 
 
 
prev
What does all this discussion of bands and band gaps have to do with semiconductors?
Go to the next page to find out!
next

Copyright © 2003 Doris Jeanne Wagner and Rensselaer Polytechnic Institute.  All Rights Reserved.