After completing his master's degree, Dr. Schubert spent four years studying compound semiconductor crystal growth as a scientific staff member at the Max Planck Institute for Solid State Research. He later joined AT&T Bell Laboratories (Holmdel, N.J.) where he spent two years as a postdoctoral fellow. From 1988 to 1995, Schubert served as principal investigator in the Research Division of AT&T Bell Laboratories (Murray Hill, N.J.). During these very productive years, Dr. Schubert was made a Senior member of the IEEE in recognition of professional standing (1993) and he received the Literature Prize of the Verein Deutscher Elektrotechniker (VDE) for his book, “Doping in III–V semiconductors.” Schubert also elected a member of the Bohemian Physical Society, “for seminal contributions to the control of spontaneous emission by use of wavelength-size optical cavities.”

In 1995, he joined Boston University and was appointed to a full professorship in the Department of Electrical and Computer Engineering. He also was named an affiliated member of the Photonics Center. At BU, he was responsible for GaN materials characterization and the fabrication of compound semiconductor devices particularly GaN-based devices. Professor Schubert developed and taught the first BU Distance Learning Course, “Light-emitting Diodes–device Physics and Applications”. His course is also offered through the National Technological University and available to individuals in any country.

Dr. Schubert was elected a fellow of SPIE and IEEE in 1999. He received the Alexander von Humboldt Senior Research Award that same year. At the turn of the century, he received the 2000 Discover Magazine Award for Technological Innovation, the RD100 Award from R&D Magazine that honors the “100 most technologically significant products of the year,” and was listed in the Dictionary of International Biography. Schubert was elected Fellow of the APS, OSA and recipient of the Boston University Provost Innovation Fund Award (2001).

In 2002, Schubert was appointed Senior Constellation Chair of the Future Chip Constellation and Professor in the Department of Electrical, Computer, and Systems Engineering at Rensselaer. In that same year, Dr. Schubert was presented the RPI Medal and the Rensselaer Polytechnic Institute Trustee Faculty Achievement Award.” Professor Schubert wrote the book on “Light-Emitting” diodes in 2003, was elected a Distinguished Lecturer of the IEEE Electron Devices Society (2003-2004) and given an Honorary membership in Eta Kappa Nu (2004). He continues to teach short courses on light-emitting diodes at SPIE Photonics West, SPIE Photonics East, SPIE Annual Meeting, OSA Annual Meeting, IEEE LEOS, IEEE CLEO, and the NSF Chautauqua Short Course at RPI.

Professor Schubert's work impacts the fields of Integrated Electronics, Electronic Materials, and Semiconductors. His primary research interest is in the field of compound semiconductor materials and devices. His studies include epitaxial growth, materials characterization, device processing and fabrication, device design, and device characterization. Devices include heterobipolar transistors, light-emitting diodes, and lasers for communication, lighting, and sensing applications.

Schubert has made pioneering contributions in compound semiconductor materials and devices. His accomplishments include the discovery and first analysis of alloy broadening, the development of delta doped structures, superlattice doping in p-type GaN and AlGaN for increased acceptor activation, and compositional parabolic grading for elimination of band discontinuities in unipolar heterojunctions. He demonstrated the first resonant-cavity light-emitting diode (RCLED), which is the first practical device taking advantage of spontaneous emission enhancement; he also showed the first spontaneous emission and absorption enhancement in Er-doped Si/SiO2 microcavities. His recent accomplishments include polarization-enhanced ohmic contacts in III-V nitride materials, the explanation of the high diode ideality factors (> 2.0) found in III-V nitride p-n junction diodes, and the demonstration of high-reflectivity omni-directional