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G. Ramanath
Professor of Materials Science
and Engineering
Office: 111 Materials
Research Center
Phone: 518.276.6844
E-mail: Ramanath [at] rpi [dot] edu
URL: www.rpi.edu/dept/materials/GR
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[
Curriculum
Vita | Publication
list ]
Functional
nanostructures and thin films for device and energy applications:
Directed synthesis, assembly, modification and atomic-level engineering
of properties
Professor
Ramanath received his Ph.D. in Materials Science and Engineering from
the University
of Illinois-Urbana in 1997. His doctoral work won him a
Materials Research Society Graduate Student
Award (now known as the Gold Award). He obtained his B.Tech. in
Metallurgical Engineering from the IIT,
Madras, India, and his M.S. in Materials Science and Engineering
from the University of Cincinnati.
He was a staff member at Novellus
Systems, CA, and a Visiting Scientist at the Physics Department
of Linköping University,
Sweden, before he joined the Rensselaer faculty in Fall 1998 as an
Assistant Professor. He became a tenured Associate Professor in 2003,
and was promoted to full Professor in 2006. He is a recipient of a
Early
CAREER Award from the National Science Foundation (2000), Prof.
Bergmann Memorial Young Scientist Award from the US-Israel Binational
Science Foundation (2003), and is a co-recipient of IBM Research Partnership
Award (1999-2006), Best paper award IEEE Nano (Hong Kong, 2007). He
has been a Visiting Professor at the International
Center for Young Scientists, Tsukuba, Japan (summer 2004), the
Nanoscale Science Department
at the Max Planck Institute für Festkörperforschung,
Stuttgart, Germany as an Alexander von Humboldt Fellow (2004-2005),
and the Indian Institute of Science,
Bangalore, India (summer 2006). He is an Associate Editor of IEEE
Transactions on Nanotechnology since October 2003, and serves
on the editorial advisory board of the Journal
of Experimental Nanoscience and the The
Open Materials Science Journal.
Professor
Ramanath's current research interests are in the areas of synthesis,
assembly, and characterization of nanostructures and thin films, with
emphasis on exploring new materials and architectures for fabricating
future nanodevices for computing, energy generation and management,
and understanding the relationships between atomic-level structure
and chemistry, and properties. Below are synopses of current topics
being pursued in his group.
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Directed
synthesis and assembly of nanoscopic building blocks and heterostructures:
The underlying
theme here is to devise strategies to synthesize nanostructures
of desired dimensionalities by scalable methods, and construct
larger scale architectures in a controllable fashion by combining
chemical and/or physical guidance (molecular templating, lithography,
ion irradiation, microwave stimulation etc.) with self-assembly.
We study the molecular/atomic-level mechanisms by utilizing a
combination of multiple electron microscopy, diffraction and spectroscopy
techniques. We probe and understand the relationships between
structure, chemistry with electrical, magnetic, thermoelectric
and mechanical properties, and sensory responses. Examples of
structures being investigated include oriented nanotube architectures,
branched nanowires, nanorods, and porous networks, one- and two-dimensional
assemblies of high-coercivity nanomagnets, core-shell and branched
structures of high-figure of merit thermoelectrics, interpenetrating
proximal nanowire networks of high- and low-bandgap seminconductors
for solar cell applications.
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Molecularly
tailored interfaces and thin films:
The
goal of this thrust is to understand processing-stability-property
relationships and atomistic/molecular-level mechanisms of thin
film interfacial reactions and phase formation during growth (e.g.,
sputter-deposition, CVD, self-assembly) and post-deposition treatments
and relate them to key film and interfacial properties. Topics
explored in the past include thin film microstructure evolution
and interfacial reactions. The current focus is on investigating
the use of self-assembled molecular nanolayers at the interfaces
of thin films and nanostructured assemblies as chemical isolators,
physical spacers, and adhesion enhancers, and creating molecularly-passivated
materials. We are integrating diffusion-inhibiting and adhesion-enhancing
molecules with precursors of porous materials to create high interface
integrity materials for use as low-k dielectrics in devices. Our
studies include quantitative measurements of diffusion barrier
properties, mechanical toughness, coverage, electrical characteristics,
reliability, and thermal stability of metal-dielectric interfaces
and molecularly-tailored porous materials. We are also exploring
strategies to directly reduce metal salts directly using termini
of molecular assemblies incorporated inside porous materials to
obtain a high loading of nanoparticles of controlled shapes/sizes
in porous matrices to add a new component to our directed synthesis
efforts.
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Processing
and microanalytical techniques:
We are interested in, and adept at, synergistically combining
and devising new multiple processing approaches for thin film/nanostructure
synthesis, and exploiting multiple microanalysis techniques to
capture key features of atomistic/molecular-level phenomena. We
use combinations of CVD, PVD, directed self-assembly (from wet-chemical
and vapor-phase fluxes), nanofabrication (e.g., lithography, etching),
ion-irradiation, microwaves, and post-deposition annealing in
vacuum/controlled gas ambients. Our growing toolbox of microanalytical
techniques include electron microscopy (conventional and high
resolution TEM, diffraction, SEM), related spatially resolved
X-ray and electron spectroscopy techniques, XRD, various spectroscopies
(e.g., RBS, XPS, AES, SIMS, EDX, IR, UV-visible), in situ electrical
measurements during deposition and annealing, 4-point bend adhesion
testing and electrical device testing (I-V, C-V, TVS, etc.).
Top
Department of Materials Science & Engineering,
Rensselaer Polytechnic Institute,
110 8th Street, Troy, NY 12180, USA
Phone: 518.276.6372 Fax: 518.276.8554 |
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