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Processes - High Temperature - PECVD - Plasmatherm

For training on this equipment, contact the assigned module leads
Plasmatherm 73

Plasmatherm 73

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(Under Construction)

General Information

Left Chamber

·       Deposition purposes.
·       Substrate can be heated. Tmax=400oC.
·       Gases hooked

Line

Gas

Maximum Flow (sccm)

Gas 1

H2

200

Gas 2

SiH4

1000

Gas 3

N2

2000

Gas 4

He / N20 / CF4

2860/1420/86

Right Chamber

·       Etching (RIE) purposes.
·       Gases hooked

Line

Gas

Maximum Flow (sccm)

Gas 1

SF6 / CHF3

52/104

Gas 2

O2 / H2

100/102

Gas 3

N2

200

Gas 4

CF4

86


RF Power Unit

13.56 MHz, Maximum Power : 555 W

Reserved Processes (Do not Reprogram these)

1.     Cleaning (either of the chambers).
2.     Silicon Oxide Deposition.
3.     Silicon Nitride Deposition.
4.     Silicon Oxide Etch..

Typical Plasma colors (Can be seen through the view ports)

Oxygen: Bluish White.
Nitrogen: Pink
Fluorine based: Bluish White.


Training & Usage

Please contact the module lead to schedule a training session. After attending the training session, you are expected to return within one week with your own sample to test in the presence of the module lead. You may NOT use the equipment unsupervised until you have successfully passed the test. 

If you do not log onto the SPM for any sixty (60) day period, you forfeit your qualification and must schedule your next session with the module lead to re-test.


Reservations

Reservations for the equipment may be made on the scheduling sheet next to the equipment, or by contacting the module lead .

Procedures & Documentation (Under Construction)

Operating Instructions Troubleshooting