Focus Center, New York: Rensselaer - Task Ib continued...

Major Accomplishments:
   3D technology platform processes

  • Via-chains for via-last 3D platform demonstrated and process issues delineated, with one-micron wafer-level alignment, thermal-mechanical-electrical robust wafer bonding and thinning, and copper-damascene patterned inter-wafer interconnects; robust bonding and thinning established in collaborations with SEMATECH and Freescale
  • Feasibility of via-first 3D platform demonstrated that offers the bonding strength of dielectric adhesive bonding (partially cured BCB) with the process integration advantages of via-first bonding;
  • Low-temperature Ti-based bonding to both silicon and oxide demonstrated, attractive for various 3D applications and needs.
   Novel applications and thermomechanical stress
  • Various innovative technologies explored for 3D interconnectivity, with 3D integration of metal nanorods, carbon nanotubes and micro-nano interface particularly attractive;
  • Optical beam vias with very high optical coupling with multilayer dimensions useful in forming optical 3D structures;
  • Thermomechanical stress modeling, indicating that micron-sized vias with small pitch and thin bonding adhesive can significantly reduce stress levels that can cause TCE-mismatch induced stress failure in Cu vias and in Ta liners.
   3D-enabled designs
  • The memory performance predictor (PRACTICS) developed for predicting the reduction of memory access time and SRAM dynamic power dissipation, allowing a more extensive comparison of 2D and 3D designs;
  • Design of next-generation transceivers enabled by technology partitioning possible with 3D implementation; promising for software radios with SiGe BiCMOS ADCs;
  • Buck-topology, monolithic DC-DC converter designs using advanced foundry design rules, indicating the promise of the buck converter, particularly as a point-of-load converter with low conversion ratio; the performance advantage of high capacitance density capacitors and magnetic film inductors shown by extensive circuit simulations.

Major Accomplishments: University at Albany, MIT, IBM, Freescale Semiconductor, International SEMATECH, JPL, EVGroup, Motorola.

 

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Center for Integrated Electronics
Rensselaer Polytechnic Institute
Troy, New York 12180

Last Updated 03/30/2006

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