Michael Shur
— Patricia W. and C. Sheldon Roberts Professor of
Solid State Electronics
— Director of the Center for Broadband Data Transport Science and Technology
— Professor of Electrical, Computer, and System Engineering Department (ECSE)
— Professor of Physics, Applied Physics, and Astronomy,
Rensselaer Polytechnic Institute

— Ph. D., Physics, A.F. Ioffe Institute, 1967
— Doctor of Science, A.F. Ioffe Institute, 1992
— Honorary Doctorate, St. Petersburg State Technical University, 1994
— M.S., Electrical Engineering, St. Petersburg Electrotechnical Institute

Career Highlights:
Shur has held research or faculty positions at A.F. Ioffe Institute, Wayne State University, Oakland University, Cornell University, IBM T.J. Watson Research Center, and the University of Minnesota. From 1989 to 1996, he was the John Money Professor at the University of Virginia, where he served as the director of the Applied Electrophysics Laboratories in 1996.

Shur has authored over 1,000 technical publications; given more than 300 plenary, keynote, and invited talks and conference presentations; authored, co-authored, or edited 38 books and 29 book chapters and holds 33 patents on solid-state devices. He is a Fellow of the Institute of Electrical and Electronics Engineers (IEEE), a Fellow of the American Physical Society, Vice President of the IEEE Sensor Council, a former chair of the U.S. Chapter of Commission D of the International Union of Radio Science, editor-in-chief of the International Journal of High Speed Electronics and Systems, and a member of the honorary editorial board of Solid State Electronics magazine. In 1990 to 1993, he served as an associate editor of IEEE Transactions.

The Alexander von Humboldt Foundation in Bonn, Germany named Shur a Humboldt Research Award Winner in 2002. This prize supports his collaborative research in Germany at Walter Schottky Institute in Munich, where Shur spent February and March of 2003 and where he will return for summers through 2006.

Research Interests:
Shur is primarily involved with semiconductor devices and integrated circuits. His research interests include novel devices, such as those using wide band gap semiconductors. Examples would be high power transistors, visible and ultra violet light emitting diodes, and acousto-optic devices. Potential applications of this technology are in solid-state lighting that will result in dramatic energy savings, better living and working conditions, and medical applications. He is also working on the theory and experimental investigations of ballistic transport in semiconductors, on new emerging plasma wave electronics devices, and on electronics on flexible substrates. Many new device models developed by Shur and his colleagues have been implemented in AIM-Spice, a program accessed by tens of thousands of users on the Internet. It is located at http://www.aimspice.com.

Shur and his team also are developing new technologies for remote experimentation and distance learning. Their approach to remote experimentation technology is demonstrated by AIM-Lab, which allows users to perform measurements on semiconductor devices via the Internet. The program is accessible from Shur's web page.

Selected Publications:
S. K. O'Leary, B. E. Foutz, M. S. Shur, and L. F. Eastman, "Potential Performance of Indium-Nitride-based Devices", Appl. Phys. Lett.

V. Ryzhii, A. Satou, and M. S. Shur, " Plasma Effects in Lateral Schottky Junction Terahertz Detector: Models and Characteristics", IWCE, (2006).

S. Rumyantsev , A. Vijayaraghavan, S. Kar, A. Khanna, C. Soldano, N. Pala, R. Vajtai, O. Nalamasu, M. Shur, and P. Ajayan, "Effect of Atmospheric Pressure on Conductance Fluctuations in Single-Wall Carbon Nanotubes", 14th Int. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, June 26-30,(2006).

V. V. Popov, G. M. Tsymbalov, D. V. Fateev, M. S. Shur, "Slit-grating gate field-effect transistor: a plasmonic device for high terahertz frequencies", 14th Int. Symp. Nanostructures: Physics and Technology, St Petersburg, Russia, June 26-30, (2006).

M. S. Shur, "Ballistic FET as Detector of IEDs", IEEE Sensor Coucil Newsletter, January (2006).

M. Ryzhii, I. Khmyrova, V. Ryzhii, T. Otsuji, and M. S. Shur, "Modeling of Plasma Oscillations and Terahertz Photomixing in HEMT-like Hetereostructure with Lateral Schottky Junction", SPIE Symp. Microelectronics, MEMS and Nanotechnology, Australia, December (2005).

A. Dmitriev and M. S. Shur, "Plasma Oscillations of Two Dimensional Electron Stripe," Applied Physics Letters, 87, 243514, (2005).

S. K. O'Leary, B. E. Foutz, M. S. Shur, and L. F. Eastman, "Steady-State and Transient Electron Transport within bulk wurtzite indium nitride: an updated semi-classical three-valley Monte Carlo Simulation analysis", Applied Physics Letters, 87, 222103 (2005).

V. Ryzhii, M. Ryzhii, I. Khmyrova, T. Otsuji, and M. S. Shur, "Resonant Photomixing in Integrated HEMT-QWIP Device," in Extended Absttracts of International Conference on Solid State devices and Materials, Kobe, 416-417, (2005).

Contact Information:
Michael Shur
9017 Center for Industrial Innovations
Rensselaer Polytechnic Institute
110 Eighth Street
Troy, N.Y. 12180 USA
(518) 276-2201

E-mail: shurm@rpi.edu


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