E. Fred Schubert
Wellfleet Senior Constellation Professor, Future Chips
Professor of Electrical, Computer, and Systems Engineering,
Rensselaer Polytechnic Institute
Ph. D., Electrical Engineering, with honors, University of
Stuttgart, Germany, 1986
M.S., Electrical Engineering, with honors, University of
B.S., Electrical Engineering, University of Stuttgart, 1978
After completing his master's degree, Schubert spent four years
studying compound semiconductor crystal growth as a scientific staff
member at the Max Planck Institute for Solid State Research. He
later joined AT&T Bell Laboratories in Holmdel, N.J., where
he spent two years as a postdoctoral fellow. From 1988 to 1995,
Schubert served as principal investigator in the Research Division
of AT&T Bell Laboratories in Murray Hill, N.J. In 1995, he joined
Boston University and was appointed to a full professorship in the
Department of Electrical and Computer Engineering. He also was named
an affiliated member of the Photonics Center. At BU, he was responsible
for GaN materials characterization and the fabrication of compound
semiconductor devices particularly GaN-based devices. He continued
to serve as an adjunct professor for Boston University from 2002
In 2002, Schubert was appointed Senior Constellation
Chair of the Future Chip Constellation and Professor in the Department
of Electrical, Computer, and Systems Engineering at Rensselaer.
Schubert authored the books, Light-Emitting
Diodes (2003); and Doping in III-V Semiconductors (1993);
and edited the book, Delta Doping of Semiconductors (1996),
all from Cambridge University Press. Schubert also has published
nearly 200 research papers, has contributed several book chapters,
and is inventor or co-inventor of about 25 U.S. patents. He was
elected a Fellow of the Institute of Electrical and Electronics
Engineers (IEEE), American Physical Society (APS), Optical Society
of America (OSA), and the International Society for Optical Engineering
(SPIE). He also has received the Senior Research Award of the Humboldt
Foundation, Discover Magazine's Discover Award for Technological
Innovation, Research & Development Magazine's R&D
100 Award, and Boston University's Provost Innovation Fund Award.
Schubert's primary research interest is in the field of compound
semiconductor materials and devices. His studies include epitaxial
growth, materials characterization, device processing and fabrication,
device design, and device characterization. Devices include heterobipolar
transistors, light-emitting diodes, and lasers for communication,
lighting, and sensing applications.
Schubert has made pioneering contributions in
compound semiconductor materials and devices. His accomplishments
include the discovery and first analysis of alloy broadening, the
development of delta doped structures, superlattice doping in p-type
GaN and AlGaN for increased acceptor activation, crystallographic etching of GaN,
parabolic grading for elimination of band discontinuities in unipolar
heterojunctions. He demonstrated the first resonant-cavity light-emitting
diode (RCLED), which is the first practical device taking advantage
of spontaneous emission enhancement; he also showed the first spontaneous
emission and absorption enhancement in Er-doped Si/SiO2
His recent accomplishments include polarization-enhanced
ohmic contacts in III-V nitride materials, the explanation of the
high diode ideality factors (> 2.0) found in III-V nitride p-n
junction diodes, and the demonstration of high-reflectivity omni-directional
reflectors in LEDs for lighting applications.
Kim J. K., Gessmann T, Schubert E. F., Xi J.-Q., Luo H. Cho J., Sone C., Park Y.,
"GaInN light-emitting diode with conductive omnidirectional reflector having
a low-refractive index indium-tin oxide layer",
Appl. Phys. Lett. , 88, 013501 (January 2006).
(Invited) Schubert E. F., Gessmann T., and Kim J. K.,
"Inorganic semiconductors for light-emitting diodes" in Organic Light-Emitting Devices,
Synthesis, Properties, and Applications edited by K. Müllen and U. Scherf,
ISBN 3-527-31218-8 (Wiley VCH, New York, USA, 2006)
Xi J.-Q., Ojha M., Plawsky J. L., Gill W. N., Kim J. K.,
and Schubert E. F. , "Internal high-reflectivity omni-directional reflectors",
Applied Physics Letters, 87,
031111 (July 2005).
Xi J.-Q., Kim J. K., and Schubert E. F. "Silica nanorod-array
films with very low refractive indices ",
Nano Letters , 5, 1385 (July 2005).
Xi J.-Q., Ojha M., Cho W., Plawsky J. L., Gill W. N.,
Gessmann T., and Schubert E. F, "Omnidirectional reflector using nanoporous
SiO2 as a low-refractive-index materi", Optics Letters, 30,
1518, (June 2005).
Luo H., Kim J. K., Schubert E. F., Cho J., Sone C., and Park Y.,
"Analysis of high-power packages for phosphor-based white-light-emitting diodes ",
Appl. Phys. Lett.,
86, 243505, (June 2005).
Kim J. K., Luo H., Schubert E. F., Cho J., Sone C. and Park Y.,
"Strongly enhanced phosphor efficiency in GaInN white light-emitting diodes using
remote phosphor configuration and diffuse reflector cup",
Jpn. J. Appl. Phys. - Express Letter, 44,
L 649, (May 2005).
(Invited) Schubert E. F. and Kim J. K. , "Solid-state light
sources becoming smart", Science ,
308, 1274, (May 2005).
Xi Y., Xi J.-Q., Gessmann T., Shah J. M., Kim J. K.,
Schubert E. F., Fischer A. J., Crawford M. H., Bogart K. H. A., and
Allerman A. A., "Junction and carrier temperature measurements in
deep-ultraviolet light-emitting diodes using three different methods", Appl. Phys. Lett.,
86, 031907, (Jan. 2005).
Kim J. K., Gessmann T., Lu H., and Schubert E. F., "GaInN
light-emitting diodes with RuO2/SiO2/Ag omni-directional reflect",
Appl. Phys. Lett., 84, 4508, (May 2004).
Kim J. K., Waldron E. L., Li Y.-L., Gessmann T.,
Schubert E. F., Jang H. W., and Lee J.-L.,
"P-type conductivity in bulk AlxGa1-xN and
AlxGa1-xN/AlyGa1-yN superlattices with average Al mole fraction > 20 %",
Appl. Phys. Lett., 84, 3310, (May 2004).
E. Fred Schubert
7111 Low Center for Industrial Innovation
Rensselaer Polytechnic Institute
110 Eighth Street
Troy, N.Y. 12180 USA
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