E. Fred Schubert
— Wellfleet Senior Constellation Professor, Future Chips
— Professor of Electrical, Computer, and Systems Engineering,
Rensselaer Polytechnic Institute

Education:
— Ph. D., Electrical Engineering, with honors, University of Stuttgart, Germany, 1986
— M.S., Electrical Engineering, with honors, University of Stuttgart, 1981
— B.S., Electrical Engineering, University of Stuttgart, 1978

Career Highlights:
After completing his master's degree, Schubert spent four years studying compound semiconductor crystal growth as a scientific staff member at the Max Planck Institute for Solid State Research. He later joined AT&T Bell Laboratories in Holmdel, N.J., where he spent two years as a postdoctoral fellow. From 1988 to 1995, Schubert served as principal investigator in the Research Division of AT&T Bell Laboratories in Murray Hill, N.J. In 1995, he joined Boston University and was appointed to a full professorship in the Department of Electrical and Computer Engineering. He also was named an affiliated member of the Photonics Center. At BU, he was responsible for GaN materials characterization and the fabrication of compound semiconductor devices – particularly GaN-based devices. He continued to serve as an adjunct professor for Boston University from 2002 to 2003.

In 2002, Schubert was appointed Senior Constellation Chair of the Future Chip Constellation and Professor in the Department of Electrical, Computer, and Systems Engineering at Rensselaer.

Schubert authored the books, Light-Emitting Diodes (2003); and Doping in III-V Semiconductors (1993); and edited the book, Delta Doping of Semiconductors (1996), all from Cambridge University Press. Schubert also has published nearly 200 research papers, has contributed several book chapters, and is inventor or co-inventor of about 25 U.S. patents. He was elected a Fellow of the Institute of Electrical and Electronics Engineers (IEEE), American Physical Society (APS), Optical Society of America (OSA), and the International Society for Optical Engineering (SPIE). He also has received the Senior Research Award of the Humboldt Foundation, Discover Magazine's Discover Award for Technological Innovation, Research & Development Magazine's R&D 100 Award, and Boston University's Provost Innovation Fund Award.

Research Areas:
Schubert's primary research interest is in the field of compound semiconductor materials and devices. His studies include epitaxial growth, materials characterization, device processing and fabrication, device design, and device characterization. Devices include heterobipolar transistors, light-emitting diodes, and lasers for communication, lighting, and sensing applications.

Schubert has made pioneering contributions in compound semiconductor materials and devices. His accomplishments include the discovery and first analysis of alloy broadening, the development of delta doped structures, superlattice doping in p-type GaN and AlGaN for increased acceptor activation, crystallographic etching of GaN, and compositional parabolic grading for elimination of band discontinuities in unipolar heterojunctions. He demonstrated the first resonant-cavity light-emitting diode (RCLED), which is the first practical device taking advantage of spontaneous emission enhancement; he also showed the first spontaneous emission and absorption enhancement in Er-doped Si/SiO2 microcavities.

His recent accomplishments include polarization-enhanced ohmic contacts in III-V nitride materials, the explanation of the high diode ideality factors (> 2.0) found in III-V nitride p-n junction diodes, and the demonstration of high-reflectivity omni-directional reflectors in LEDs for lighting applications.

Selected Publications:
Kim J. K., Gessmann T, Schubert E. F., Xi J.-Q., Luo H. Cho J., Sone C., Park Y., "GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive index indium-tin oxide layer", Appl. Phys. Lett. , 88, 013501 (January 2006).

(Invited) Schubert E. F., Gessmann T., and Kim J. K., "Inorganic semiconductors for light-emitting diodes" in Organic Light-Emitting Devices, Synthesis, Properties, and Applications edited by K. Müllen and U. Scherf, ISBN 3-527-31218-8 (Wiley VCH, New York, USA, 2006)

Xi J.-Q., Ojha M., Plawsky J. L., Gill W. N., Kim J. K., and Schubert E. F. , "Internal high-reflectivity omni-directional reflectors", Applied Physics Letters, 87, 031111 (July 2005).

Xi J.-Q., Kim J. K., and Schubert E. F. "Silica nanorod-array films with very low refractive indices ", Nano Letters , 5, 1385 (July 2005).

Xi J.-Q., Ojha M., Cho W., Plawsky J. L., Gill W. N., Gessmann T., and Schubert E. F, "Omnidirectional reflector using nanoporous SiO2 as a low-refractive-index materi", Optics Letters, 30, 1518, (June 2005).

Luo H., Kim J. K., Schubert E. F., Cho J., Sone C., and Park Y., "Analysis of high-power packages for phosphor-based white-light-emitting diodes ", Appl. Phys. Lett., 86, 243505, (June 2005).

Kim J. K., Luo H., Schubert E. F., Cho J., Sone C. and Park Y., "Strongly enhanced phosphor efficiency in GaInN white light-emitting diodes using remote phosphor configuration and diffuse reflector cup", Jpn. J. Appl. Phys. - Express Letter, 44, L 649, (May 2005).

(Invited) Schubert E. F. and Kim J. K. , "Solid-state light sources becoming smart", Science , 308, 1274, (May 2005).

Xi Y., Xi J.-Q., Gessmann T., Shah J. M., Kim J. K., Schubert E. F., Fischer A. J., Crawford M. H., Bogart K. H. A., and Allerman A. A., "Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods", Appl. Phys. Lett., 86, 031907, (Jan. 2005).

Kim J. K., Gessmann T., Lu H., and Schubert E. F., "GaInN light-emitting diodes with RuO2/SiO2/Ag omni-directional reflect", Appl. Phys. Lett., 84, 4508, (May 2004).

Kim J. K., Waldron E. L., Li Y.-L., Gessmann T., Schubert E. F., Jang H. W., and Lee J.-L., "P-type conductivity in bulk AlxGa1-xN and AlxGa1-xN/AlyGa1-yN superlattices with average Al mole fraction > 20 %", Appl. Phys. Lett., 84, 3310, (May 2004).

Contact Information:
E. Fred Schubert
7111 Low Center for Industrial Innovation
Rensselaer Polytechnic Institute
110 Eighth Street
Troy, N.Y. 12180 USA
(518) 276-8775

E-mail: EFSchubert@rpi.edu
www.rpi.edu/~schubert

 

Top of Page