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Omkaram Nalamasu Education: Career Highlights:
In 2003, Nalamasu received the NYSTAR (New York State Office of Science, Technology, and Academic Research) Distinguished Professor Award along with a $1 million grant from the Faculty Development Program. Nalamasu has earned several other prestigious awards, including the American Chemical Society (ACS) National Award for Team Innovation for the Invention and Innovation of 193 nm (nanometer) Resist Material in 2000 and Japan's Photopolymer Science and Technology Award in 1998. He and his technical team also won an R&D 100 Award for Invention, Development, and Commercialization of the first Deep-UV (ultraviolet) Chemically Amplified Photoresist (CAMP) in 1997. Nalamasu has published more than 170 papers, review articles, and book chapters; he has received eleven patents and edited two books. He also has organized and presented several invited and plenary talks at national and international conferences, including one by invitation for the National Academy of Engineering's 4th Annual Symposium on the Frontiers of Engineering in 1998. In addition to his Rensselaer center directorship, Nalamasu is the chief technical officer of the New Jersey Nanotechnology Consortium, a public/private nonprofit enterprise he co-founded to foster nanotechnology partnerships across academia, industry, and government. Research Areas: Nalamasu has made seminal contributions to the fields of optical lithography and polymeric materials science and technology. His pioneering contributions to optical lithography and photoresist materials science and technology have played a major role in enabling the microelectronics revolution, especially where this technology helped extend the boundaries of optical lithography for patterning sub-100 nm design rule devices. His contributions to the fundamental understanding of the structure-property relationships between molecular structure of resist components and their relation to resist properties, as well as his contributions to resist materials chemistry and process development have played a defining role in identifying novel resist materials and chemistries required for implementation of deep-UV, 193 nm, and e-beam lithographic technologies. Selected Publications: S. Yang, P. Mirau, C.S. Pai, O. Nalamasu, E. Reichmanis, J. Seputro, Y.S. Obeng, E. Lin, and H.J. Lee, "Nanoporous Ultralow Dielectric Constant Organosilicates Templated by Triblock Copolymers," Chemistry of Materials, 14, (1), 369-374, (2002). E. Reichmanis and O. Nalamasu, "Testing the Limits of Resists," Science, 297, 349-350, (2002). E. Reichmanis, O. Nalamasu, and F.M. Houilhan, "Photoresponsive Polymers: Applications in Electronics," in Encyclopedia of Physical Science and Technology, (2001). S. Pau, G.P. Watson, and O. Nalamasu, "Writing an Arbitrary Non-Periodic Pattern Using Interference Lithography," Journal of Modern Optics, 48, 1211-1223, (2001). O. Nalamasu, F.M. Houlihan, E. Reichmanis, R. Cirelli, and A. Timko, "An Overview of the Role of Materials Technology for 193 nm Lithography," Polymer Material Science Engineering, 84, 207, (2001). E. Reichmanis and O. Nalamasu, "Polymer Materials for Microelectronics Imaging Applications," in Applied Polymer Science, C.D. Craver, C.E. Carraher, Eds., Elsevier, Oxford, 635-658, (2000). G.P. Watson, I.C. Kizilyalli, O. Nalamasu, R.A. Cirelli, M. Miller, Y.T. Wang, B. Pati, J. Radosevich, R. Kohler, F. Klemens, W. Mansfield, H. Vaidya, A. Timko, L.E. Trimble, and J. Frackoviak, "Implementing Advanced Lithography Technology: A 100 MHz, 1 Volt Digital Signal Processor Fabricated with Phase Shift Technology," Journal of Vacuum Science and Technology B, 18, 2877, (2000). E. Reichmanis, O. Nalamasu, and F.M. Houlihan, "Organic Materials Challenges for 193 nm Imaging," Accounts of Chemical Research, 32, (8), 659, (1999). Contact Information: E-mail: nalamasu@rpi.edu
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