Toh-Ming Lu
— Ray Palmer Baker Distinguished Professor of Physics
— Director, Center for Advanced Interconnect Systems Technologies,
Rensselaer Polytechnic Institute

Education:
— Ph.D., Physics, University of Wisconsin, Madison, 1976
— M.S., Physics, Worcester Polytechnic Institute, 1971
— B.S., Physics, Cheng Kung University, Taiwan, 1968

Career Highlights:
Lu was the director (2000-2005) of the Semiconductor Research Corporation (SRC) Center for Advanced Interconnect Systems Technologies, through which 25 faculty and 45 graduate students from 13 universities are researching advanced interconnects. He previously served as the chairman of the Physics Department at Rensselaer from 1992 to 1997. Lu is a Fellow of the American Physical Society and the American Vacuum Society. He has earned numerous other honors, including Rensselaer's Early Career Award in 1986, the SRC Invention Award in 1988, the Rensselaer Center for Integrated Electronics Faculty Award in 1993, and the Williams Wiley Distinguished Faculty Award in 2002, Materials Research Society Medal Award in 2004, and SRC Faculty Leadership Award in 2005.

Nineteen of his 29 former doctoral students have earned best thesis/paper awards. Major semiconductor related companies such as IBM, Intel, AMD, Motorola, MA/COM, Analog, Eaton, and GE, as well as government laboratories, have hired Lu's former students.

Research Areas:
Lu's recent interests include the growth and characterization of nano-photonic structures for integrated optics applications; physical self-assembly of 3D nanostructures that possess large photonic bandgap; measurements of mechanical properties of isolated nanostructures; interfacial activation of dielectric surface for advanced metallization; atomic layer deposition of metal on dielectric surfaces using metallorganic precursors; and real-time diffraction measurements of thin film microstructures during growth.

Selected Publications:
G.A. Ten Eyck, J.J. Senkevich, F. Tang, D.-L. Liu, S. Pimanpang, T. Karabacak, G.-C. Wang, T.-M. Lu, C. Jezewski, and W.A. Lanford, "Plasma-assisted atomic layer deposition of Pd," Chem. Vap. Dep. ,
11, 60, (2005).

C. Jezewski,* W.A. Lanford,* C.J. Wiegand, J.P. Singh, P.-I. Wang J.J. Senkevich, and T.-M. Lu, "Inductively Coupled Hydrogen Plasma-Assisted Cu Atomic Layer Deposition on Metallic and Dielectric Surfaces", J. Electrochem. Soc., 152, C60, (2005).

D.-X. Ye, B. Carrow, S. Pimanpang, H. Bakhru, G. A. Ten Eyck, G.-C. Wang, and T.-M. Lu, "Evaluation of a Novel Cu(I) Precursor for Chemical Vapor Deposition," Electrochem. Solid-state Lett., 8, C85, (2005).

D.-X. Ye, T. Karabacacak, R. C. Picu, G.-C. Wang, and T.-M. Lu, "Uniform Si nano-structures grown by oblique angle deposition with substrate swing rotation", Nanotechnology, 16, 1717, (2005).

T. Karabacak and T.-M. Lu, "Shadowing Growth and Physical Self-Assembly", in Handbook of Theoretical and Computational Nanotechnology, edited by M. Rieth and W. Schommers (American Scientific Publishers, 2005), chap. 69.

F. Tang, C. Gaire, D.-X. Ye, T. Karabacak, T.-M. Lu, and G.-C. Wang, "AFM, SEM and in situ RHEED study of Cu texture evolution on amorphous carbon by oblique angle vapor deposition", Phys. Rev. B, 72, 035430,(2005).

F. Tang, T. Karabacak, P. Morrow, C. Gaire, G.-C. Wang, and T.-M. Lu, "Texture evolution during shadowing growth of isolated Ru columns", Phys. Rev. B, 72, 165402, (2005).

J.P. Singh, T. Karabacak, D.-X. Ye, D.-L. Liu, C. Picu, T.-M. Lu, and G.-C. Wang, "Physical properties of nanostructures grown by oblique angle deposition", J. Vac. Sci. Technol. B , 23, 2114, (2005).

T. Karabacak and T.-M. Lu, "Enhanced step coverage by oblique angle physical vapor deposition", J. Appl. Phys., 97, 124504, (2005).

C. Gaire, D.-X. Ye, F. Tang, R. C. Picu, G.-C. Wang, and T.-M. Lu, "A Mechanical testing of isolated amorphous Si slanted nanorods", J. Nanosci. Nanotech., 5, 1893, (2005).

Contact Information:
Toh-Ming Lu
Rensselaer Polytechnic Institute
110 Eighth Street
Troy, N.Y. 12180 USA
(518) 276-2979

E-mail: lut@rpi.edu
www.rpi.edu/~lut

Top of Page