     
|


Ronald Gutmann
Emeritus Professor of Electrical, Computer,
and Systems Engineering,
Rensselaer Polytechnic Institute
Education:
Ph.D., Electrophysics, Rensselaer
Polytechnic Institute, 1970
Master's Degree, Electrical Engineering, New York University,
1964
Bachelor's Degree, Electrical Engineering, Rensselaer Polytechnic
Institute, 1962
Career Highlights:
Gutmann began his professional career in
1962 as a member of the technical staff at AT&T Bell Laboratories,
where he developed microwave components and systems for radar applications.
In 1966, he joined Lockheed Electronics Company, working on beam-steering
and beam-forming techniques for phased arrays. From 1967 to 1970
Gutmann worked at Rensselaer and at Rensselaer Research Corporation,
developing novel semiconductor control devices. He joined the Rensselaer
faculty in 1970.
Gutmann was selected as a NASA-American Society
for Engineering Education (ASEE) Fellow at Johnson Space Center
in 1977, served as a visiting member of the technical staff at Bell
Laboratories in 1979, and was a visiting scientist at M/A-Com in
1985. From 1981 to 1983, he served as program director of the Solid
State and Microstructures Engineering Program at the National Science
Foundation (NSF). In this role, Gutmann chaired the Interagency
Electronics Committee, administered small business innovative research
(SBIR) programs in microelectronics, served on the Technical Activities
Board of the Semiconductor Research Corporation (SRC), and had administrative
responsibility for the National Nanofabrication Facility. From 1989
to 1994, he served as director of the Rensselaer Center for Integrated
Electronics (CIE).
Gutmann has authored over 300 technical papers,
co-authored three books on IC interconnect technology, and is a
Fellow of the Institute of Electrical and Electronics Engineers
(IEEE) for contributions in microwave semiconductor devices. He
has served on a number of university boards, including SEMATECH
International and the Semiconductor Research Corporation (SRC).
He has received both the Rensselaer Alumni Association Outstanding
Faculty Award (1990) and the William H. Wiley Distinguished Faculty
Award (2000).
Research Areas:
Gutmann's research interests include interconnect
(IC) technology semiconductor devices and RF/microwave design. His
current research includes wafer-level 3D ICs using dielectric glue
bonding and copper damascene patterned inter-wafer interconnects,
chemical-mechanical polishing (CMP), first-level packaging, SiC
and GaN MOS power devices, and antimonide-based devices for thermophotovoltaic
(TPV) applications.
Selected Publications:
K. Matocha, T.P. Chow, and R.J. Gutmann,
"Positive Flatband Voltage Shift in MOS Capacitors on n-Type
GaN," Electron Device Letters, 32, (2), 79-81,
(February 2002).
J.-Q. Lu, K.W. Lee, Y. Kwon, G. Rajagopalan, J.
McMahon, B. Altemus, M. Gupta, E. Eisenbraun, B. Xu, A. Jindal,
R.P. Kraft, J.F. McDonald, J. Castracane, T.S. Cale, and A. Kaloyeros,
and R.J. Gutmann, "Processing of Inter-Wafer Vertical Interconnects
in 3D Ics," in Proceedings of the Advanced Metallization
Conference (AMC) 2002, San Diego, (October 2002).
C.L. Borst, W.N. Gill, R.J. Gutmann, and P.C.
Petkow-Dimitrow, Chemical-Mechanical Polishing of Low Dielectric
Constant Polymers and Organosilicate Glasses, Kluwer Academic
Publishers, (2002).
J.-Q. Lu, Y. Kwon, G. Rajagopalan, M. Gupta, J.
McMahon, K.-W. Lee, R.P. Kraft, J.F. McDonald, T.S. Cale, R.J. Gutmann,
B. Xu, E. Eisenbraun, J. Castracane, and A. Kaloyeros, "A Wafer-Scale
3D IC Technology Platform Using Dielectric Bonding Glues and Copper
Damascene Patterned Inter-Wafer Interconnects," in Proceedings
of the 2002 IEEE International Interconnect Technology Conference
(IITC), 78-80, San Francisco, (2002).
Y. Xiao, R. Natarajan, T.P.Chow, E.J. Rymaszewski,
and R.J. Gutmann, "Flip-Chip Flex-Circuit Packaging for 42V/16A
Integrated Power Electronics Module Applications," Proceedings
of the Seventeenth Annual IEEE Applied Power Electronics Conference
and Exposition, 21-26, (2002).
K. Chatty, T.P. Chow, R.J. Gutmann, E. Arnold,
and D. Alok, "Comparative Hall Measurements on Wet and Dry
Oxidized 4H-SiC MOSFETs," Journal of Electronic Materials,
31, (5), 356-360, (2002).
R.J. Gutmann, J.-Q. Lu, Y. Kwon, J.F. McDonald,
and T.S. Cale, "Three-Dimensional (3D) ICs: A Technology Platform
for Integrated Systems and Opportunities for New Polymeric Adhesives,"
(invited), Polytronic 2001, 1st International IEEE Conference
on Polymers and Adhesives in Microelectronics and Photonics;
Potsdam, Germany; (October 2001).
K. Chatty, T.P. Chow, R.J. Gutmann, E. Arnold,
and D. Alok, "Accumulation-Layer Electron Mobility in N-Channel
4H-SiC MOSFETs," Electron Device Letters, 22,
212-214, (2001).
S.P. Murarka, I.V. Verner,
and R.J. Gutmann, Copper Fundamentals for Microelectronic Applications,
John Wiley & Sons Inc., New York, (1997).
J.M. Steigerwald, S.P.
Murarka, and R.J. Gutmann, Chemical Mechanical Planarization
of Microelectronics Materials, John Wiley & Sons Inc., New
York, (1997).
Contact Information:
Ronald Gutmann
6129 Low Center for Industrial Innovation
Rensselaer Polytechnic Institute
110 Eighth Street
Troy, N.Y. 12180 USA
(518) 276-6794
E-mail: gutmar@rpi.edu
Top of Page
|