Ronald Gutmann
— Emeritus Professor of Electrical, Computer, and Systems Engineering,
Rensselaer Polytechnic Institute

Education:
— Ph.D., Electrophysics, Rensselaer Polytechnic Institute, 1970
— Master's Degree, Electrical Engineering, New York University, 1964
— Bachelor's Degree, Electrical Engineering, Rensselaer Polytechnic Institute, 1962

Career Highlights:
Gutmann began his professional career in 1962 as a member of the technical staff at AT&T Bell Laboratories, where he developed microwave components and systems for radar applications. In 1966, he joined Lockheed Electronics Company, working on beam-steering and beam-forming techniques for phased arrays. From 1967 to 1970 Gutmann worked at Rensselaer and at Rensselaer Research Corporation, developing novel semiconductor control devices. He joined the Rensselaer faculty in 1970.

Gutmann was selected as a NASA-American Society for Engineering Education (ASEE) Fellow at Johnson Space Center in 1977, served as a visiting member of the technical staff at Bell Laboratories in 1979, and was a visiting scientist at M/A-Com in 1985. From 1981 to 1983, he served as program director of the Solid State and Microstructures Engineering Program at the National Science Foundation (NSF). In this role, Gutmann chaired the Interagency Electronics Committee, administered small business innovative research (SBIR) programs in microelectronics, served on the Technical Activities Board of the Semiconductor Research Corporation (SRC), and had administrative responsibility for the National Nanofabrication Facility. From 1989 to 1994, he served as director of the Rensselaer Center for Integrated Electronics (CIE).

Gutmann has authored over 300 technical papers, co-authored three books on IC interconnect technology, and is a Fellow of the Institute of Electrical and Electronics Engineers (IEEE) for contributions in microwave semiconductor devices. He has served on a number of university boards, including SEMATECH International and the Semiconductor Research Corporation (SRC). He has received both the Rensselaer Alumni Association Outstanding Faculty Award (1990) and the William H. Wiley Distinguished Faculty Award (2000).

Research Areas:
Gutmann's research interests include interconnect (IC) technology semiconductor devices and RF/microwave design. His current research includes wafer-level 3D ICs using dielectric glue bonding and copper damascene patterned inter-wafer interconnects, chemical-mechanical polishing (CMP), first-level packaging, SiC and GaN MOS power devices, and antimonide-based devices for thermophotovoltaic (TPV) applications.

Selected Publications:
K. Matocha, T.P. Chow, and R.J. Gutmann, "Positive Flatband Voltage Shift in MOS Capacitors on n-Type GaN," Electron Device Letters, 32, (2), 79-81, (February 2002).

J.-Q. Lu, K.W. Lee, Y. Kwon, G. Rajagopalan, J. McMahon, B. Altemus, M. Gupta, E. Eisenbraun, B. Xu, A. Jindal, R.P. Kraft, J.F. McDonald, J. Castracane, T.S. Cale, and A. Kaloyeros, and R.J. Gutmann, "Processing of Inter-Wafer Vertical Interconnects in 3D Ics," in Proceedings of the Advanced Metallization Conference (AMC) 2002, San Diego, (October 2002).

C.L. Borst, W.N. Gill, R.J. Gutmann, and P.C. Petkow-Dimitrow, Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses, Kluwer Academic Publishers, (2002).

J.-Q. Lu, Y. Kwon, G. Rajagopalan, M. Gupta, J. McMahon, K.-W. Lee, R.P. Kraft, J.F. McDonald, T.S. Cale, R.J. Gutmann, B. Xu, E. Eisenbraun, J. Castracane, and A. Kaloyeros, "A Wafer-Scale 3D IC Technology Platform Using Dielectric Bonding Glues and Copper Damascene Patterned Inter-Wafer Interconnects," in Proceedings of the 2002 IEEE International Interconnect Technology Conference (IITC), 78-80, San Francisco, (2002).

Y. Xiao, R. Natarajan, T.P.Chow, E.J. Rymaszewski, and R.J. Gutmann, "Flip-Chip Flex-Circuit Packaging for 42V/16A Integrated Power Electronics Module Applications," Proceedings of the Seventeenth Annual IEEE Applied Power Electronics Conference and Exposition, 21-26, (2002).

K. Chatty, T.P. Chow, R.J. Gutmann, E. Arnold, and D. Alok, "Comparative Hall Measurements on Wet and Dry Oxidized 4H-SiC MOSFETs," Journal of Electronic Materials, 31, (5), 356-360, (2002).

R.J. Gutmann, J.-Q. Lu, Y. Kwon, J.F. McDonald, and T.S. Cale, "Three-Dimensional (3D) ICs: A Technology Platform for Integrated Systems and Opportunities for New Polymeric Adhesives," (invited), Polytronic 2001, 1st International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics; Potsdam, Germany; (October 2001).

K. Chatty, T.P. Chow, R.J. Gutmann, E. Arnold, and D. Alok, "Accumulation-Layer Electron Mobility in N-Channel 4H-SiC MOSFETs," Electron Device Letters, 22, 212-214, (2001).

S.P. Murarka, I.V. Verner, and R.J. Gutmann, Copper Fundamentals for Microelectronic Applications, John Wiley & Sons Inc., New York, (1997).

J.M. Steigerwald, S.P. Murarka, and R.J. Gutmann, Chemical Mechanical Planarization of Microelectronics Materials, John Wiley & Sons Inc., New York, (1997).

Contact Information:
Ronald Gutmann
6129 Low Center for Industrial Innovation
Rensselaer Polytechnic Institute
110 Eighth Street
Troy, N.Y. 12180 USA
(518) 276-6794

E-mail: gutmar@rpi.edu

 

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