Daniel Gall
— Assistant Professor, Materials Science and Engineering Department
Rensselaer Polytechnic Institute

Education:
— Ph.D., Physics, University of Illinois at Urbana-Champaign, 2000
— Diploma, Physics, University of Basel, Switzerland, 1994

Career Highlights:
Daniel Gall holds an assistant professor position in the Materials Science and Engineering Department at the Rensselaer Polytechnic Institute since 2002. Prior to that, he has been a Visiting Scientist at the Frederick Seitz Materials Research Laboratory, Illinois, and has served as Assistant Editor for Thin Solid Films. Dr. Gall is elected member of the Advanced Surface Engineering Division Executive Committee of the AVS, is the proceeding editor of the International Conference for Metallurgical Coatings and Thin Films, is member of the Editorial Board of Thin Solid Films, and has organized and co-chaired multiple symposia in the fields of thin film deposition, surface engineering, and nanotechnology. His research on novel transition-metal nitrides was identified as one of "the 100 most important scientific discoveries during the past two and a half decades, supported by the US Department of Energy’s Office of Science". Dr. Gall has authored 3 book chapters and over 40 peer-reviewed journal articles. His students won multiple poster competitions, best paper awards, and best microscopy awards.

Research Areas:
Dr. Gall’s research focuses on the development of an atomistic understanding of thin film growth, with particular interest in transition-metal nitride coatings and ion-surface interactions. He has pioneered a multiple length-scale approach to explain texture evolution in hard-coatings and has shown how low-energy ion-irradiation can be employed to control surface diffusion processes and resulting microstructures. Dr. Gall’s research group develops techniques to create novel nanopillars and nanopipes by exploiting atomic shadowing effects during sputter deposition. He is also studying coherent electron scattering at epitaxial Cu-layer surfaces for applications in interconnects of integrated circuits.

Recent Publications:

For a complete publication list please see:
Daniel Gall's publication web site:

Jian Wang, Hanchen Huang, S. V. Kesapragada, and Daniel Gall, “ Growth of Y-Shaped Nanorods through Physical Vapor Deposition,” Nanoletters, 5, 2505 (2005)

C.P. Mulligan and D. Gall, “ CrN-Ag Self-Lubricating Hard Coatings,” Surf. Coat. Technol., 200, 1495 (2005).

J.R. Frederick and D. Gall, “ Surface morphological evolution of epitaxial CrN(001) layers,” J. Appl. Phys., 98, 054906 (2005)

J.R. Frederick and D. Gall, “ Nanostaircases: An Atomic Shadowing Instability during Epitaxial CrN(001) Layer Growth,” Appl. Phys. Lett., 87, 053107 (2005); also featured in: Virt. J. Nanoscale Sci. Tech., 12, 6 (2005)

C. W. Lim, C.-S. Shin, D. Gall, J. M. Zuo, I. Petrov, and J. E. Greene, "Growth of CoSi2 on Si(001) by reactive deposition epitaxy," Journal of Applied Physics, 97 , 044909 (2005)

Marcel A. Wall, David G. Cahill, I. Petrov, D. Gall, J.E. Greene, " Nucleation kinetics versus nitrogen partial pressure during homoepitaxial growth of stoichiometric TiN(001): A scanning tunneling microscopy study," Surface Science, 581, L122 (2005)

H. A. Al-Brithen, A. R. Smith, and D. Gall, “ Surface and bulk electronic structure of ScN(001) investigated by scanning tunneling microscopy/spectroscopy and optical absorption spectroscopy,” Phys. Rev. B, 70 , 045303 (2004)

C.-S. Shin, S. Rudenja. D. Gall, N. Hellgren, T.-Y. Lee, I. Petrov, and J. E. Greene, "Growth, surface morphology, and electrical resistivity of fully-strained substoichiometric epitaxial TiNx (0.67 £ x < 1.0) layers on MgO(001)", Journal of Applied Physics, 95, 356 (2004)

Contact Information:
Daniel Gall
204 MRC Materials Science and Eng.,
Rensselaer Polytechnic Institute
110 Eighth Street
Troy, N.Y. 12180 USA
(518) 276-8471

Please visit my personal webpage

E-mail: galld@rpi.edu

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