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Daniel Gall
— Assistant Professor, Materials Science and Engineering Department
Rensselaer Polytechnic Institute
Education:
— Ph.D., Physics, University of Illinois at Urbana-Champaign, 2000
— Diploma, Physics, University of Basel, Switzerland, 1994
Career Highlights:
Daniel Gall holds an assistant professor position in the Materials
Science and Engineering Department at the Rensselaer Polytechnic
Institute since 2002. Prior to that, he has been a Visiting Scientist
at the Frederick Seitz Materials Research Laboratory, Illinois, and has
served as Assistant Editor for Thin Solid Films. Dr. Gall is elected
member of the Advanced Surface Engineering Division Executive Committee
of the AVS, is the proceeding editor of the International Conference
for Metallurgical Coatings and Thin Films, is member of the Editorial
Board of Thin Solid Films, and has organized and co-chaired multiple
symposia in the fields of thin film deposition, surface engineering,
and nanotechnology. His research on novel transition-metal nitrides was
identified as one of "the 100 most important scientific discoveries
during the past two and a half decades, supported by the US Department
of Energy’s Office of Science". Dr. Gall has authored 3 book chapters
and over 40 peer-reviewed journal articles. His students won multiple
poster competitions, best paper awards, and best microscopy awards.
Research Areas:
Dr. Gall’s research focuses on the development of an atomistic
understanding of thin film growth, with particular interest in
transition-metal nitride coatings and ion-surface interactions. He has
pioneered a multiple length-scale approach to explain texture evolution
in hard-coatings and has shown how low-energy ion-irradiation can be
employed to control surface diffusion processes and resulting
microstructures. Dr. Gall’s
research group develops techniques to create novel nanopillars and
nanopipes by exploiting atomic shadowing effects during sputter
deposition. He is also studying coherent electron scattering at
epitaxial Cu-layer surfaces for applications in interconnects of
integrated circuits.
Recent Publications:
For a complete publication list please see:
Daniel Gall's publication web site:
Jian Wang,
Hanchen Huang, S. V. Kesapragada, and Daniel Gall, “ Growth of Y-Shaped
Nanorods through Physical Vapor Deposition,” Nanoletters, 5, 2505 (2005)
C.P. Mulligan
and D. Gall, “ CrN-Ag Self-Lubricating Hard Coatings,” Surf. Coat.
Technol., 200, 1495 (2005).
J.R. Frederick
and D. Gall, “ Surface morphological evolution of epitaxial CrN(001)
layers,” J. Appl. Phys.,
98, 054906 (2005)
J.R. Frederick
and D. Gall, “ Nanostaircases: An Atomic Shadowing Instability during
Epitaxial CrN(001) Layer Growth,” Appl. Phys. Lett., 87, 053107
(2005); also featured in: Virt. J. Nanoscale Sci. Tech., 12, 6 (2005)
C. W. Lim, C.-S.
Shin, D. Gall, J. M. Zuo, I. Petrov, and J. E. Greene, "Growth of CoSi2
on Si(001) by reactive deposition epitaxy," Journal of Applied
Physics, 97 , 044909 (2005)
Marcel A. Wall,
David G. Cahill, I. Petrov, D. Gall, J.E. Greene, " Nucleation kinetics
versus nitrogen partial pressure during homoepitaxial growth of
stoichiometric TiN(001): A scanning tunneling microscopy study," Surface
Science, 581, L122 (2005)
H. A.
Al-Brithen, A. R. Smith, and D. Gall, “ Surface and bulk electronic
structure of ScN(001) investigated by scanning tunneling
microscopy/spectroscopy and optical absorption spectroscopy,” Phys.
Rev. B, 70 , 045303 (2004)
C.-S. Shin, S.
Rudenja. D. Gall, N. Hellgren, T.-Y. Lee, I. Petrov, and J. E. Greene,
"Growth, surface morphology, and electrical resistivity of
fully-strained substoichiometric epitaxial TiNx (0.67 £ x <
1.0) layers on MgO(001)", Journal of Applied Physics, 95, 356 (2004)
Contact Information:
Daniel Gall
204 MRC Materials Science and Eng.,
Rensselaer Polytechnic Institute
110 Eighth Street
Troy, N.Y. 12180 USA
(518) 276-8471
Please visit my personal webpage
E-mail: galld@rpi.edu
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