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Tim S. Cale
— Professor, Chemical Engineering,
Rensselaer Polytechnic Institute
Education:
— Ph.D., Chemical Engineering, University
of Houston, 1980
— B.S., Chemical Engineering, Arizona State University, 1976
Career Highlights:
Professor Cale has been the director of the
Focus Center on the Rensselaer campus since 1998, when he joined
the university as a professor in the Department of Chemical Engineering.
Prior to his arrival in Troy, he served as director of the Center
for Solid State Electronics Research at Arizona State University
(ASU), where he also held numerous roles, including assistant chair
of chemical engineering and professor of engineering. Prior to his
work at ASU, he held a postdoctoral fellowship at the University
of Houston. Cale's industrial experience includes employment with
such companies as Motorola, Intel Corporation and Monsanto Company.
Cale is a member of the American Institute of Chemical Engineers,
the Institute of Electrical and Electronics Engineers, the American
Vacuum Society Materials Research Society, and The Electrochemical
Society. He also has served as a reviewer for such organizations
as the National Science Foundation and the American Society of Mechanical
Engineers and is the associate editor for Transactions of Semiconductor
Manufacturing.
Research Areas:
Cale's research focuses on transport and
reaction fundamentals of processes used to fabricate integrated
circuits. He developed the widely used model for transport and reaction
during low-pressure deposition and etch processes. This model has
been used in several computer programs to understand how process
conditions affect thin film processing at the feature (micron scale).
He has been interested in multiscale process modeling and simulation
for a number of years. Cale has proposed processes in which conditions
are varied in a preprogrammed, model driven manner to optimize process
or film properties. He currently focuses on simulations and experiments
designed to understand nucleation and grain evolution during deposition
and processing. Cale's teaching interests include semiconductor
materials processing, reaction engineering, and applied mathematics.
Selected Publications:
X-Y, Liu,J.E. Raynolds, C. Wells, J. Welch, and T.S. Cale, "Atomistic Modeling of Electron Transport in Self-Assembled Arene-Based Molecular Wires," in 2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2005) pp. 271-274 IEEE, 2005.
Daniel N. Bentz, Jing Zhang, Max Bloomfield, Jian-Qiang Lu, Ronald J. Gutmann and Timothy S. Cale, "Modeling Thermal Stresses of Copper Interconnects in 3D IC Structures," in Proceeding of the COMSOL Multiphysics Conference 2005, J. Hiller (ed.), COMSOL pp. 321-326, 2005.
Max Bloomfield, Jing Zhang, Daniel N. Bentz, Jian-Qiang Lu, Ronald J. Gutmann and Timothy S. Cale, "Thermally Induced Stresses in 3D ICs,"in Advanced Metallization Conference (2005) in press.
Daniel N. Bentz, Jing Zhang, Max O. Bloomfield,
Jian-Qiang Lu, Ronald J. Gutmann and Timothy S. Cale, "Thermal Stresses in 3D IC Interwafer Vias," in Proceedings of the Twenty Second International VLSI Multilevel Interconnect Conference (VMIC), T. Wade (ed.), IMIC pp.89-96,2005.
F. Niklaus, J.-Q. Lu, J.
J. McMahon, J. Yu, S. H. Lee, T. S. Cale, R. J. Gutmann, "Wafer-Level 3D Integration Technology Platforms for ICs and MEMs," in Proceedings of the Twenty Second International VLSI Multilevel Interconnect Conference (VMIC), T. Wade (ed.), IMIC, pp. 486-493, 2005.
Timothy S. Cale, Dae-lok Bae, Christopher Jezewski and Jay J.
Senkevich, in Silicon Nitride and Silicon Dioxide Thin Insulating Films and Other Emerging Dielectrics
VIII,"Metallization of Sealed Porous MSQ," R. E. Sah, M. J. Deen, J. Zhang, J. Yota, and Y. Kamakura, eds., Proc. Vol. 2005-01, ECS, pp.521-534, 2005.
Jing Zhang, Max O. Bloomfield, Jian-Qiang Lu,
Ronald J. Gutmann, and Timothy S. Cale, "Thermal Stresses in 3D IC Interwafer Interconnects," Micro. Eng., 82, 534-547, 2005.
Frank Niklaus, R. J. Kumar, J. J. McMahon, J. Yu, T. Matthias, M.
Wimplinger, P. Lindner, J. -Q. Lu, T. S. Cale and R. J. Gutmann, "Effects of Bonding Process Parameters on Wafer-to-Wafer Alignment Accuracy in Benzocyclobutene
(BCB) Dielectric Wafer Bonding," submitted to MRS.
Pushkar Jain, Jasbir S. Juneja, Vinay Bhagwat, Eugene J. Rymaszewski, Toh -Ming Lu, and Timothy S.Cale, "Effects of Substrate/Film Temperature on Properties of Reactively Sputtered Tantalum Oxide Films," J. Vac. Sci. Tech. A, 23(3), 512-519, (2005).
Jongwon Seok, Cyriaque P. Sukam, Andrew T. Kim, John A. Tichy, Timothy S. Cale, "Material removal model for chemical-mechanical polishing considering wafer flexibility and edge effects," Wear, 257(5-6), 496-508(2004).
Contact Information:
Tim S. Cale
6015 Center for Industrial Innovation
Rensselaer Polytechnic Institute
110 Eighth Street
Troy, N.Y. 12180 USA
(518) 276-8676
E-mail: calet@rpi.edu
www.rpi.edu/~calet
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