Ishwara B. Bhat
— Professor of Electrical, Computer, and Systems Engineering,
Rensselaer Polytechnic Institute

Education:
— Ph.D., Electrical Engineering, Rensselaer Polytechnic Institute, 1985
— M.S., Electrical Engineering, Rensselaer Polytechnic Institute, 1981
— B. Tech., Electrical Engineering, Indian Institute of Technology, Madras, India, 1980


Career Highlights:
Bhat joined Rensselaer in 1985 as a research associate and was promoted to full professor in 2000. He has published over 75 articles in refereed journals and edited several special issues of the Journal of Electronic Materials. Bhat has served as a member of the program committee of several national and international conferences, including serving as co-chair of the 1996 and 2000 U.S. Workshop on the Physics and Chemistry of II-VI Materials held in Las Vegas, Nevada and Albuquerque, N.M., respectively.

Research Areas:
Bhat has over 20 years of experience in epitaxial growth and characterization of several II-VI, III-V, and IV-IV semiconductors. His work includes growth of wide band gap semiconductors (such as GaN, SiC, and ZnSe) and narrow band semiconductors (such as HgCdTe and InGaSb). His current research is focused on the growth of silicon carbide epitaxial films for use in high-power, high-temperature, and high-voltage devices, as well as the growth of InGaSb for application in multi-infrared technology. Bhat has been awarded nearly a dozen multi-year contracts with various government agencies and industrial labs, such as the Office of Naval Research (ONR), Defense Advanced Research Projects Agency (DARPA), Texas Instruments, and others.

His accomplishments include first demonstrations of p-type doping of HgCdTe by metalorganic vapor phase epitaxy (MOVPE), p-type doping of ZnSe by MOVPE using phenylhydrazine, several in-situ grown infrared devices in HgCdTe, and development of an epitaxial lateral overgrowth (ELO) process for CdTe on Si.

Selected Publications:
R. Wang, I.B. Bhat, and T.P. Chow, "Epitaxial Growth of N-Type SiC Using Phosphine and Nitrogen as the Precursors," Journal of Applied Physics, 81, 7587-7592, (2002).

H. Cui, I.B. Bhat, S. Murarka, H. Lu, W.-J. Hsia, and W. Catabay, "Copper Drift in Methyl-Doped Silicon Oxide Film," Journal of Vacuum Science Technology B, 20, (5), 1987-1993, (2002).

R. Zhang and I.B. Bhat, "Atomic Force Microscopy Studies of CdTe Films Grown by Epitaxial Lateral Overgrowth," Journal of Electronic Materials, 30, 1370-1376, (2001).

H. Cui, I.B. Bhat, B. O'Quinn, and R. Venkatasubramanian, "In-Situ Monitoring of the Growth of Bi2Te3 and Sb2Te3 Films and Bi2Te3-Sb2Te3 Superlattice Using Spectroscopic Ellipsometry," Journal of Electronic Materials, 30, 1376-1382, (2001).

R. Zhang and I.B. Bhat, "Selective Growth of CdTe on Silicon and GaAs Substrates," Journal of Electronic Materials, 29, 765-769, (2000).

H. Ehsani, I.B. Bhat, R.J. Gutmann, G. Charache, and M. Freeman, "The Role of Relative Tilt on the Structural Properties of GaInSb Epitaxial Layers Grown on (001)GaSb Substrates," Journal of Applied Physics, 86, 835-841, (1999).

S. Dakshinamurthy and I.B. Bhat, "Monitoring of CdTe ALE Nucleation Using In-Situ Spectroscopic Ellipsometry," Journal of Electronic Materials, 27, 521-526, (1998).

S. Dakshinamurthy and I.B. Bhat, "In-Situ Monitoring of CdTe Nucleation on GaAs (100) Using Spectroscopic Ellipsometry," Journal of Crystal Growth, 170, 193-197, (1997).

H. Lu, M. Thothathiri, Z. Wu, and I.B. Bhat, "Study of Indium Droplets Formation on the InGaN Films by Single Crystal X-ray Diffraction," Journal of Electronic Materials, 26, 281-286, (1997).

H. Lu and I.B. Bhat, "Photoassisted Anodic Etching of GaN," Journal of Electrochemical Society, 144, L8-L11, (1997).

Contact Information:
Ishwara B. Bhat
6032 Jonsson Engineering Center
Rensselaer Polytechnic Institute
110 Eighth Street
Troy, N.Y. 12180 USA
(518) 276-2786

E-mail: bhati@rpi.edu

 

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