• Khemka, V., and Chow, T.P., "Thermal Oxidation of (100) Silicon in O₂ and CO₂ and its Effect on the SiO₂-Si MOS Parameters," Journal of Electrochemical Society, 144, 1137-1143 (1997).
• Fedison, J., Chow, T.P., Lu, H., and Bhat, I.B., "Reactive Ion Etching of GaN in BCl₃/N₂ Plasmas," Journal of Electrochemical Society, 144, L221-L224 (1997).
• Hu, Y.Z., Gutmann, R.J., Chow, T.P., Bussmann, K., Cheng, S.F., and Prinz, G.A., "Chemical-Mechanical Polishing as an Enabling Technology for Giant Magnetoresistance (GMR) Devices", Thin Solid Films, December 1997.
• Ramungul, N., Khemka, V., Tyagi, R., Chow, T.P., Ghezzo, M., Neudeck, P.G., Kretchmer, J., Hennessy, W., and Brown, D.M., "Comparison of Aluminum- and Boron-Implanted Vertical 6H-SiC p+n Junction Diodes," Solid-State Electronics, 42, 17-22 (1998).
• Fedison, J.B., Chow, T.P., Lu, H., and Bhat, I.B., "Electrical Characteristics of Magnesium-Doped Gallium Nitride Junction Diodes," Applied Physics Letters, 72, 2841-2843 (1998).
• Hu, Y.Z., Gutmann, R.J., and Chow, T.P., "Silicon Nitride Chemical Mechanical Polishing Mechanisms," J. Electrochem. Soc., 145, 3919-3925 (1998).
• Khemka, V., Chow, T.P., and Gutmann, R.J., "Effect of Reactive Ion Etch-Induced Damage on the Performance of 4H-SiC Schottky Barrier Diodes," J. Electron. Materials, 27, 1128-1135 (1998).
• Yang, G.-R., Zhao, Y.-P., Hu, Y.Z., Gutmann, R.J., and Chow, T.P., "XPS and AFM Study of Chemical Mechanical Polishing of Silicon Nitride," Thin Solid Films, 333, 219-223 (1998).
• Ramungul N., Khemka, V., Zheng, Y., Patel, R., and Chow, T.P., "6H-SiC P⁺N Junctions Fabricated by Beryllium Implantation," IEEE Trans. Electron Devices, 46, 465-470 (1999).
• Ramungul N., and Chow, T.P., "Current-Controlled Negative Resistance (CCNR) in SiC P-i-N Rectifiers," IEEE Trans. Electron Devices, 46, 493-496 (1999).
• Chatty, K., Khmeka, V., Chow, T.P., and Gutmann, R.J., "Re-Oxidation Characteristics of Oxynitrides on 3C- and 4H-SiC," J. Electron. Mat., 28, 161-166 (1999).
• Khemka, V., Patel, R., Ramungul, N., Chow, T.P., Ghezzo, M., and Kretchmer, J., "Characterization of Phosphorus Implantation in 4H-SiC," J. Electron. Mat., 28, 167-174 (1999).
• Khemka, V., Chow, T.P., and Gutmann, R.J., "Design Considerations and Experimental Analysis for Silicon Carbide Power Rectifiers," Solid-State Electronics, 43, 1945-1962 (1999).
• Gupta, R.N., Min, W.G., and Chow, T.P., "A Novel Planarized Trench Sidewall Oxide-Merged PiN/Schottky (TSOX-MPS) Rectifier," Electron Device Letters, 20, 1128-1135 (1999).
• Khemka, V., Ananthan, V., and Chow, T.P., "A fully planarized 4H-SiC Trench MOS Barrier Schottky (TMBS) rectifier," Electron Device Letters, 27, 286-288 (2000).
• Chatty, K., Banerjee, S., Chow, T.P., and Gutmann, R.J., "High-voltage lateral RESURF MOSFET?s on 4H-SiC," Electron Device Letters, 27, 356-358 (2000).
• Gao, Y., Tang, Y., Hoshi, M., and Chow, T.P., "Improved Ohmic Contacts on n-type 4H-SiC," Solid-State Electronics, 44, 1875-1878 (2000).
• Chow, T.P., "Progress in SiC High-Voltage Power Switching Devices," Future Electron Devices, 11, 106-112 (2000).
• Tang, Y., Fedison, J.B., and Chow, T.P., "An implanted-emitter 4H-SiC bipolar transistor with high current gain," Electron Device Letters, 22, 119-120 (2001).
• Fedison, J.B., Ramungul, N., Chow, T.P., Ghezzo, G., and Kretchmer, J.W., "Electrical characteristics of 4.5kV implanted anode 4H-SiC PIN junction rectifiers," Electron Device Letters, 22, 130-132 (2001).
• Banerjee, S., Chatty, K., Chow, T.P., and Gutmann, R.J., "Improved high-voltage lateral RESURF MOSFETs in 4H-SiC," Electron Device Letters, 22, 209-211 (2001).
• K. Chatty, T.P. Chow, R.J. Gutmann, E. Arnold, and D. Alok, "Accumulation-layer electron mobility in n-channel 4H-SiC MOSFETs," Electron Device Letters, 22, 212-214 (2001).
• Y. Tang, J.B. Fedison, and T.P. Chow, "High-Voltage Implanted-Emitter 4H-SiC BJTs," Electron Device Letters, 23(1), 16-18 (2002).
• K. Matocha, T.P. Chow, and R.J. Gutmann, "Positive Flatband Voltage Shift in MOS Capacitors on n-Type GaN," Electron Device Letters, 23(2), 79-81 (2002).
• R. Singh, J.A. Cooper, M. Melloch, T.P. Chow, and J.W. Palmour, "SiC Power Schottky and PiN Diodes," IEEE Transactions on Electron Devices, 49(4), 665-672 (2002).
• K. Chatty, T.P. Chow, R.J. Gutmann, E. Arnold, and D. Alok, "Comparative Hall Measurements on Wet and Dry Oxidized 4H-SiC MOSFETs," J. Electronic Materials, 31(5), 356-360 (2002).
• A. Elasser and T.P. Chow, "Silicon Carbide Benefits and Advantages for Power Electronics Circuits and Systems," Proceeding of the IEEE, 90(6), 969-986 (2002).
• K. Chatty, S. Banerjee, T.P. Chow, and R.J. Gutmann, "Hystersis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs," Electron Device Letters, 23(6), 330-332 (2002).
• K. Mondal, R. Natarajan, and T.P. Chow, "An Integrated 500-V Power DMOSFET/Antiparallel Rectfier Device with Improved Diode Reverse Recovery Characteristics," Electron Device Letters, 23(9), 562-564 (2002).

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