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Current Employer |
| Ananthan, Venkatesan | August, 1998 | A Fully Planarized 4H-SiC Trench MOS Barrier Schottky(TMBS) Rectifier | |
| Bai, Yong | August, 1999 | Si LDMOS device and circuit simulatio for wireless applications | |
| Bhalla, Anup | August, 1991 | Study of the temperature dependence of the SPICE Gummel-Poon Model Parameters from -40 to 185 0C | Alpha and Omega Semiconductors, Santa Clara, CA |
| Bian, Kun | May, 1996 | Performance of N-channel Junction-Isolated LIGBT's at Low Temperatures | |
| Bu, Gang | May, 2001 | Design of High Power Microwave Devices with Wide Band-Gap Semiconductors | Rensselaer Polytechnic Institute (Ph.D) |
| DeMeo, Renzo | May, 1994 | Thermal Oxidation and Interface Properties of Silicon and Silicon Carbide in N2O | |
| Fedison, Jeff | December,1996 | Fabrication and Characterization of insitu Grown and Ion implanted Lateral p+n GaN junctions | GE CR&D, Schenectady, NY |
| Gao, Yanming | August, 1998 | Ohmic Contacts to N- and P-Type 4H-Silicon Carbide | Teradyne, CA |
| Gupta, Rajesh | May, 1998 | A Novel Silicon Trench Sidewall Oxide-Merged PIN Schottky(TSOX-MPS) Rectifier | |
| Khemka, Vishnu | May, 1996 | Thermal Oxidation of (100) Silicon in Oxygen Mixed with Carbon Dioxide and its Effect on MOS Parameters | Motorola |
| Ku, Suk Hoon | December,1996 | Design, Simulation, Fabrication and Characterization of High Voltage N-Channel DMOS Insulated-Gate Bipolar Transistor with Diverter(IGBTD) | IBM, Fishkill, NY |
| Lakshminarayanan.S | December, 1992 | Process Integration for Copper Metallization | LSI Logic |
| Langer, Jeff | August, 2002 | Characterization of Dry and Wet Oxide Processing on MOS Devices | Rensselaer Polytechnic Institute (Ph.D) |
| Li, Zhi | August, 1999 | Simulation, Fabrication and Characterization of P/C and P/Si Co-Implanted 4H-SiC N+P Junction Rectifiers | |
| Matocha, Kevin | December, 1997 | Nickel Schottky Barriers on N-Type Gallium Nitride | Rensselaer Polytechnic Institute
(Ph.D) |
| Mondal, Krishnendu | May, 2001 | Design,Fabrication and Characterization of 500V Integrated DMOSFET/MPS Rectifier Devices | IBM ,Burlington,VT |
| Patel, Rupal | December, 1998 | Fabrication and Characterization of Phosphorus implanted 4H-SiC N+/P junction rectifiers | SANDIA Laboratory, Alberquerque, NM |
| Shanbag, Mayura | August,2002 | Cryogenic Operation of 4H-SiC Schottky Rectifiers | MICRON, Boise, ID |
| Shen, Zheng | May, 1991 | An Analytical IGBT Model for Power Circuit Simulation | |
| Tyagi, Ritu | May, 1992 | Schottky Barrier Height Modification on InP Using a Shallow Implant Layer | International Rectifiers , El Segundo, CA |
| Wang, Lin | December, 1999 | Design, Simulation, Fabrication and Characterization of the Insulated gate Bipolar Transistor with Base Resistance Controlled Thyristor (IGBT/BRT) | |
| Wang, Ta-Kung | August, 1992 | Interfacial Properties of Silicon Carbide Contact Resistivity and MOS Characteristics | |
| Zheng, Yingping | August, 1997 | Fabrication and Characterization of in-situ Grown and Ion Implanted Lateral p+n Junction Diodes | ON Semiconductor, RI |
| Zhu, Lin | December, 2001 | 4H-SiC Junction Rectifiers and JFETs | Rensselaer Polytechnic Institute
(Ph.D Candidate) |
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Current Position |
| Banerjee, Sujit | August, 2002 | High-Voltage Lateral RESURF MOSFETs in Silicon Carbide | Power Integrations , Santa Clara, CA |
| Bhalla, Anup | December, 1994 | Vertical MOS Gated Thyristors with Emitter Switched Control | Alpha and Omega Semiconductors, Santa Clara, CA |
| Chatty, Kiran | October, 2001 | 4H-SiC MOS Capacitors and Lateral MOSFETs | IBM, Burlington, VT |
| Fedison, Jeff | May, 2001 | High-Voltage Silicon Carbide Junction Rectifiers and GTO Thyristors | GE CR&D, Schenectady, NY |
| Hasekioglu, Attila | April, 1994 | Multi-Dimensional Numerical Simulation of the Charge Collection Process in Semiconductor Image Sensors | |
| Hu, Yongzhong | November, 1997 | Chemical-Mechanical Polishing of Dielectric Thin Films for Integrated Giant Magnetoresistance Non-Volatile Memories | AMD |
| Khemka, Vishnu | December, 1999 | High-Voltage Schottky Barrier Rectifiers and Static Induction Transistors in 4H-SiC | MOTOROLA, Phoenix, AZ |
| Lakshminarayanan.S | December, 1996 | Dual Damascene Multilevel Copper Interconnections | LSI Logic |
| Min, Gi Won | May, 2000 | High-Voltage Silicon Trench Sidewall Oxide-Merged P-i-N/Schottky(TSOX-MPS) Rectifier | MOTOROLA, Phoenix, AZ |
| Parthasarathy, Vijay | November, 1995 | Design,Analysis,Fabrication and Optimization of the N-Channel Hybrid Combination of a Vertical MOSFET and Lateral Insulated Gate Bipolar Transistor | MOTOROLA, Phoenix, AZ |
| Ramungul, Nudjarin | August, 1998 | Design and Characterization of 6H-SiC Devices for High-Power High-Temperature Applications | |
| Shen John, Zheng | October, 1994 | Modelling, Design, Fabrication, and Characterization of the Insulated Gate Bipolar Transistor with Integrated Current Sensors | University of Michigan , Detroit |
| Tyagi-Sodhi, Ritu | June, 1996 | Silicon Carbide Device Technology for High-Power Applications | International Rectifiers, El Segundo, CA |
| Zhu, Ronghua | April, 1998 | Performance Improvements of the Vertical,Double-Diffused Power Metal-Oxide-Silicon Field-Effect Transistor | MOTOROLA, Phoenix, AZ |