Dr. Ishwara Bhat

                                                   Electrical, Computer and Systems Engineering Department
                                                   Rensselaer Polytechnic Institute
                                                   Troy, New York 12180


                             Contact Information

                                                  Electrical, Computer, and Systems Engineering Department
                                                  Rensselaer  Polytechnic Institute
                                                  110 8th Street, Troy, NY 12180-3590
                                                  Phone: (518) 276-2786  Fax: (518) 276-8761
                                                  E-Mail: bhati@rpi.edu


Ph.D.May 1985 - Electrical Engineering ,Rensselaer Polytechnic Institute, Troy, New York

M. S.December 1981 - Electrical Engineering, Rensselaer Polytechnic Institute, Troy, New York

B. Tech.June 1980 - Electrical Engineering, Indian Institute of Technology, Madras, India

Ishwara B. Bhat is a Professor of Electrical, Computer and Systems Engineering Department at RPI. He received his B.S.E.E. degree from Indian Institute of Technology, India and his M.S. and Ph.D. degrees from Electrical Engineering, Rensselaer Polytechnic Institute (RPI). He has over 20 years of experience in epitaxial growth and characterization of several II-VI, III-V and IV-IV semiconductors. He was the Co-Chair of 1996 and 2000 II-VI workshops held in Las Vegas, NV and Albuquerque, NM respectively and has edited several special issues of Journal of Electronic Materials. He has served as the member of the Program Committee of several national and International Conferences. Professor Bhat has published over 75 articles in refereed journals.

Research Interest

His research interests included growth of wide band gap semiconductors (such as GaN, SiC and ZnSe) and narrow band semiconductors (such as HgCdTe, InGaSb). His accomplishments included first demonstrations of: (a) p type doping of HgCdTe by MOVPE, (b) p type doping of ZnSe by MOVPE using phenylhydrazine, and, (c) several in-situ grown IR devices in HgCdTe, and development of ELO growth process for CdTe on Si.

Prof. Bhat had over 10 multiyear contracts with various government agencies and industrial labs. His current research is focused on the growth of silicon carbide epitaxial films for use in high power, high temperature and high voltage devices, as well as the growth of InGaSb for application in multi-IR technology.


1999-Professor, Electrical, Computer and Systems Engineering Department Rensselaer Polytechnic Institute, Troy, NewYork.
1991-1999Associate Professor, Rensselaer Polytechnic Institute.
1988-1991 Research Assistant Professor, Rensselaer Polytechnic Institute.
1985-88 Research Associate, Rensselaer Polytechnic Institute.

Selected Publications

1.Rongjun Wang, Ishwara B. Bhat,and T. Paul Chow, Epitaxial growth of n-type SiC using phosphine and nitrogen as the precursors, Journal of Applied Physics,     p7587-7592 (2002).

2.Hao Cui, Ishwara B. Bhat, Shyam Murarka, Hongqiang Lu, Wei-Jen Hsia, and Wilbur Catabay,Copper drift in methyl-doped silicon oxide film, J. Vac. Sci. Technol. B 20(5), p 1987-1993 (2002).

3.R. Zhang, and I. Bhat, Atomic Force Microscopy Studies of CdTe Films Grown by Epitaxial Lateral Overgrowth, J. Electron. Mater., V30, p1370 - 1376,2001.

4.Hao Cui, I. Bhat, B. OQuinn, and R. Venkatasubramanian,In-situ monitoring of the growth of Bi2Te3 and Sb2Te3 films and Bi2Te3-Sb2Te3 suprelattice using spectroscopic ellipsometry, J. Electron. Mater; v30, p1376 - 1382, 2001.

5.R. Zhang, and I. Bhat,Selective growth of CdTe on Silicon and GaAs substrates, J. Electron. Mater., V29, p765-769,2000.

6.H. Ehsani, I. Bhat, R. J. Gutmann, G. Charache and M. Freeman,The Role of Relative Tilt on the Structural Properties of GaInSb Epitaxial Layers Grown on (001)GaSb Substrates, J. Appl. Physics, 86, 835 - 841, (1999).

7.S. Dakshinamurthy and I. Bhat, "In-situ monitoring of CdTe nucleation on GaAs (100) using spectroscopic ellipsometry", J. Crystal Growth, 170, 193-197, (1997).

8.H. Lu, M. Thothathiri, Z. Wu and I. Bhat, "Study of indium droplets formation on the InGaN films by single crystal x-ray diffraction", J. Electronic Mater., 26, 281-286, (1997).

9.H. Lu and I. Bhat, "Photoassisted anodic etching of GaN", J. of Electrochemical Society, v144, L8-L11, (1997).

10.S. Dakshinamurthy and I. Bhat, Monitoring of CdTe ALE nucleation using in-situ spectroscopic ellipsometry, J. Electron. Mater. Vol. 27, pp 521 -526, 1998.