Rensselaer

Ishwara B. Bhat

Professor

Affiliation

Department of Electrical, Computer & Systems Engineering, Rensselaer Polytechnic Institute

Education

Ph.D., Rensselaer Polytechnic Institute, Electrical Engineering
M.S., Rensselaer Polytechnic Institute, Electrical Engineering
B.S., Indian Institute of Technology, Electrical Engineering

Background

Dr. Bhat joined Rensselaer in 1985 as a research associate and was promoted to full professor in 2000. He has published over 75 articles in refereed journals and edited several special issues of the Journal of Electronic Materials. Bhat has served as a member of the program committee of several national and international conferences, including serving as co-chair of the 1996 and 2000 U.S. Workshop on the Physics and Chemistry of II-VI Materials held in Las Vegas, Nevada and Albuquerque, N.M., respectively.

Research Interests

Dr. Bhat's research interests include semiconductors, electronic materials, and computer hardware. He has over 20 years of experience in epitaxial growth and characterization of several II-VI, III-V, and IV-IV semiconductors. His work includes growth of wide band gap semiconductors (such as GaN, SiC, and ZnSe) and narrow band semiconductors (such as HgCdTe and InGaSb).

His current research is focused on the growth of silicon carbide epitaxial films for use in high-power, high-temperature, and high-voltage devices, as well as the growth of InGaSb for application in multi-infrared technology. Bhat has been awarded nearly a dozen multi-year contracts with various government agencies and industrial labs, such as the Office of Naval Research (ONR), Defense Advanced Research Projects Agency (DARPA), Texas Instruments, and others.

Awards

His accomplishments include first demonstrations of p-type doping of HgCdTe by metalorganic vapor phase epitaxy (MOVPE), p-type doping of ZnSe by MOVPE using phenylhydrazine, several in-situ grown infrared devices in HgCdTe, and development of an epitaxial lateral overgrowth (ELO) process for CdTe on Si.

Contact

Ishwara B. Bhat

Jonsson Engineering Center
Room 6032
Rensselaer Polytechnic Institute
110 8th Street
Troy, New York 12180

Office: (518) 276-2786
E-Mail:
bbhati@rpi.edu

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