IEEE Honors Baliga With Lamme Medal

Jayant Baliga '74 The Institute of Electrical and Electronics Engineers awarded B. Jayant Baliga '74 the 1999 IEEE Lamme Medal, honoring him for his "sustained, innovative contributions to power semiconductor technology, which has had widespread impact on power electronic systems."
  Baliga is distinguished university professor of electrical engineering at North Carolina State University and director of the Power Semiconductor Research Center, Raleigh, an industrial consortium that he founded there in 1991.
  While working at the GE Corporate Research Laboratory from 1974 to 1988, he developed many power device structures now widely used by the power electronics industry. Among these is the Insulated Gate Bipolar Transistor produced by numerous semiconductor companies for use in appliance controls, robotics, automotive ignition, electric cars, and most recently in a compact, portable defibrillator for cardiac arrest victims.
  His work also has had a significant impact on the field of materials research for high-power devices. Using the "Baliga's Figure of Merit," a fundamental equation derived by him in 1979, performance of power field effect transistors has been projected to improve by a factor of 2,000 times by replacing silicon with silicon carbide. This has stimulated a worldwide effort to develop a new generation of power devices for the 21st century.
Baliga has published extensively and holds 99 patents including one selected for the 1995 B.F. Goodrich Collegiate Inventors Award given at the Inventors Hall of Fame. He is a fellow of the IEEE and a member of the National Academy of Engineering. He was selected among the 100 Brightest Young Scientists in America by Science Digest magazine in 1984, and was named by Scientific American magazine in 1997 as among the eight heroes of the semiconductor revolution.
Baliga holds a doctorate and master's degree from Rensselaer and a bachelor's degree from the Indian Institute of Technology, Madras.

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