ECSE-6260

Semiconductor Power Devices

Special problems of semiconductor devices operating at high voltage and high current levels. Devices include p-n diodes, p-i-n diodes, transistors, and thyristors. Topics include space charge limited current flow, microplasmas, avalanche breakdown, surface contouring, cylindrical junctions and field plates, high-level injection, emitter crowding, gain and gain-bandwidth product at high current levels, double injection, lateral thermal instability, second breakdown, triggering mechanisms, plasma propagation, switching and recovery characteristics, and device fabrication technology. Prerequisite: ECSE-6230. Spring term odd-numbered years.

3 credit hours