ECSE-6240

VLSI Fabrication Technology

Fabrication technology for silicon and gallium arsenide integrated circuits with emphasis on sub-micron structures. Topics include epitaxy, diffusion, binary and ternary phase diagrams, grown and deposited oxides and nitrides, polysilicon and silicide technology, single- and multi-metal systems, plasma and chemical etching, ion milling photo, e-beam and X-ray lithography. Prerequisite: ECSE-4250 or equivalent. Spring term even-numbered years.

3 credit hours