ECSE-4250

Integrated Circuit Processes and Design

The theoretical and practical aspects of techniques utilized in the fabrication of silicon-based microcircuits. Imperfections in semiconductors, crystal growth, solid solubility, alloying and diffusion, ion implantation, oxide masking, epitaxy, metallization, etching, and photolithography. Fabrication techniques for bipolar and MOS-microcircuits, and the electrical performance of devices based on these techniques. Microcircuit design and layout. Students cannot receive credit for both this course and MTLE-4160. Prerequisite: ECSE-2210. Fall term annually.

3 credit hours