Biographical sketch of  Dr. Toh-Ming Lu
Ray Palmer Baker Distinguished Professor of Physics

Department of Physics, Applied Physics, and Astronomy
Rensselaer Polytechnic Institute
Troy, NY 12180-3590
 Tel: 518/276-2979
Fax: 518/276-6680
Email: lut@rpi.edu

Education

BS 

National Cheng Kung University, Taiwan (Physics, 1968)

MS 

Worcester Polytechnic Institute (Physics, 1971)

PhD 

University of Wisconsin, Madison (Physics, 1976)

Professional Career

1999-2005 

Director, SRC Center for Advanced Interconnect Science and Technology (13 universities) 

1997- 

Associate Director, Center for Integrated Electronics and Electronics Manufacturing (CIEEM), Rensselaer

1996-1999 

Associate Director, SRC Center for Advanced Interconnect Science and Technology, a national center including 8 universities

1992-1997 

Chairman, Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute

1982-present 

Faculty, Department of Physics, Assistant Professor: '82-'86, Associate Professor: '86-'89, Full Professor: '89-), Rensselaer Polytechnic Institute

1979-1982 

Research Associate, Materials Science, University of Wisconsin, Madison

1979-1980 

Guest Scientist, National Bureau of Standards, Washington, DC

1977-1978 

Physics and Math Teacher, Catholic High School, Sibu Malaysia

Research Fields and Funding

Thin film morphological evolution and ordering; 3D integrated nano-structure formation; diffraction from imperfect surfaces, overlayers, dynamic growth fronts; growth and characterization of metal, ceramic, and polymeric thin films for microelectronics, photonics, and nanoelectronics applications. Since '82, well funded research by NSF, DARPA, ARO, AFOSR, IBM, DEC, Kodak, Martin-Marietta, GE, Intel, Sheldahl, and AT&T.

 

Awards and Honors
          Semiconductor Research Corporation (SRC) Faculty Leadership Award (2005)

            Materials Research Society Medal Award (2004)

            Williams Wiley Distinguished Faculty Award (2002)

Fellow of American Vacuum Society (1995).

Fellow of the American Physical Society (1994).

Rensselaer Center for Integrated Electronics Faculty Award (1993).

Semiconductor Research Corporation (SRC) Invention Award (1988).

Rensselaer Early Career Award (1986).


Publications and Invited Talks

Author and co-authored five books, edited two books, and four book chapters

Over 400 technical papers; six patents

Over 200 invited lectures at national, international conferences, and academic and industrial institutions, including APS, MRS, AIME, Gordon, ACS.


Selective Professional Activities

Member of American Physical Society, American Vacuum Society, and Materials Research Society. Committee member for "International Workshop on Ionized Cluster Beam Technology", Tokyo ('86). Panelist and Section Chair, "International Workshop on Self-Ion Assisted Deposition", Colorado Spring ('91). Section Chair, AVS ('85), MRS ('91, '94). Local Committee member and Section Chair, PEC ('93). Panelist/Specialist for World Bank to evaluate performance of the World Bank loan to China ('88). DOE Panel Review Member, Materials Division ('93). United Nation Visiting Scholar (Microelectronics) to China (1994). Co-organizer of '95 and '98 MRS Symposiums on Low Dielectric Constant Thin Films; co-organizer of ’04 MRS Symposium on Interconnect. Panelist/Steering Committee/Session Chair at the 1996 Low Dielectric Constant Materials Workshop sponsored by SEMATECH and Steering Committee/Session Chair of the same Workshop in 1999. NSF SBIR Review Panelist (1997). External Assessor for Hong Kong Research Grants Council (1993-). Editorial Board member of Chemistry and Physics of Materials, 1995-. SRC University Advisory Board, 1998-. International Interconnect Technology Conference organizing committee, 2000-. Organizer of the SRC Workshop on "Fundamental limits on metallization". Co-organizer of the Symposium on Si Microelectronics in the 2005 International Conference on Materials for Advanced Technologies (ICMAT)

 

PhD Student Graduated

21 out of the 31 former PhD students won best thesis/paper awards. Former students hired by major semiconductor related companies such as IBM, Intel, AMD, Motolora, MA/COM, Analog, Eaton, and GE, and Government laboratories. Educated numerous undergraduate students in our Undergraduate Research Participation Program over the two decades.

 

Departmental Development

Research development: hired as the first Assistant Professor in the Department (1982) to conduct interdisciplinary research and teaching. His success had encouraged subsequent hiring of more faculty working in the interdisciplinary area. After a decade of development, the applied physics program has been ranked No. 9 in the nation since 1993 by the Gourman Graduate Report.

Teaching development: (As Chair of the Department (1992-1997))

1.      established an undergraduate Applied Physics degree program

2.      created Resnick Center for Undergraduate Education;

3.      created Hill B. Huntington computing facility for graduate research;

4.      eliminated the traditional large lecture format and implemented Studio Physics scheme for Introductory Physics courses (integration of lecture, recitation, and laboratory in one classroom). The Department became the first in a research oriented university to totally eliminated the traditional large lecture format and adopted the smaller classes, multimedia environment to deliver Introductory Physics courses. The development is instrumental for Rensselaer to win the 1995 Theodore M. Hesburgh Award for Innovation in Undergraduate Education, 1995 Boeing Outstanding Educator Award , and 1996 Pew Award for Leadership and Renewal Undergraduate Education.

Center Activities
Lu was the Director (1999-2005) of the SRC sponsored Center for Advanced Interconnect Science and Technology (CAIST). CAIST involves 13 Universities, 25 faculty, and more than 40 graduate students engaged in a nation-wide interdisciplinary research in ultra-fast computer chip. Lu was also one of the earlier members of the Center for Integrated Electronics( (CIE) founded in 1982 at Rensselar. Assumed the position as the Associate Director for CIE in 1997. Involved in the strategic planning/execution of CIEEM’s (a ~$9M operation at the present time) direction/business.

 

Research Accomplishments
(Ref. Numbers are referred to the publication list following this section.)

A. Growth front morphology study (with G.-C. Wang)

The group has published a series of seminal papers on the theoretical predictions and the measurements of morphological evolution during film growth and etching. They have developed a class of theoretical models and backed by experimental verification, based on a re-emission mechanism to describe commonly occurred growth/etch front roughening phenomena induced by deposition or etching noise during processing [Phys. Rev. Lett. 82, 4882 (1999); Phys. Rev. B. 61, 3012 (2000); Phys. Rev. B. 62, 2118 (2000)]. This generic class of theories can be applied to many diverse processes such as vacuum evaporation, chemical vapor deposition, sputter deposition, and plasma etching and ion beam etching. The team also developed a novel volume diffusion mechanism to describe the morphology evolution during the growth of their polymeric films by physical vapor deposition-polymerization [(Phys. Rev. Lett. 85, 3229 (2000)].

More recent interest focuses on a particularly class of deposition technique called the oblique angle deposition. This technique allows one to produce 3D nanostructures that cannot be obtained by other lithographic techniques. Many electrical, mechanical, and thermal properties of these nanostructures are actively being studied.

B. Diffraction Theory Development

Diffraction from stepped surfaces (1979-1981): As a Research Associate in Wisconsin-Madison (under Professor Max Lagally): Developed a theory of diffraction from surfaces with a random distribution of steps (Ref. 17). In particular the use of the "boundary structure factor" to quantify the diffraction beam shape is still frequently used by researchers to quantify surface step distribution.

Intensity oscillations (1982-present): Proposed a simple explanation of the well-known intensity oscillation in molecular beam epitaxy using a two-dimensional, two-level lattice gas model (Ref. 25) (1984). Developed a more sophisticated one-dimensional theory (also, independently by P. Cohen's group at Minnesota) of diffraction from surfaces with two-level, randomly distributed steps, the so-called (1x1) surface islands, to quantify the intensity oscillation for layer-by-layer epitaxial growth systems (Refs. 26, 30) (1984-1985). A more realistic, two-dimensional theory was constructed in 1992 for two-level, randomly distributed (1x1) islands (Ref. 146). A quantitative theory to describe the decaying of the intensity oscillation as a result of roughening of the growth front was also constructed in 1995 (Ref. 186).

Diffraction from growth/etch front kinetic roughening (1992): A diffraction theory with an analytical form was developed for a time-dependent, far-from-equilibrium growth/etch front that is undergoing a kinetic roughening transition which obeys a dynamic scaling behavior (Ref. 160). The existence of a "time-invariant structure factor" was predicted (Ref. 148). This laid the foundation for experimental diffraction studies of this exciting and new research area.

Diffraction from unstable growth fronts (1997): An analytical solution was obtained for the diffraction from a growth front that is not stable and that exhibits a "mounds" structure as a result of a step diffusion barrier (Schwoebel barrier) recently observed in molecular beam epitaxy (Ref. 217). Many of the predictions have not been observed in experiments yet. This theory, together with the results obtained for kinetic roughening will allow experimentalists to probe and gain insights into the dynamics of film growth, a subject of great interest both from the fundamental and practical point of views.

C. Experimental Surface and Overlayer Ordering (Collaboration With Professor G.-C. Wang)

Clean surface and overlayer ordering (in the 80's): a) physical realization of a two-dimensional Ising-like critical phenomenon in an overlayer (O/W(112)) (Ref. 38); b) measurement of an infinite-order, surface roughening transition in a flat metal surface (Pb(110)) (Ref. 95), including the observation of a critical line and a pre-roughening phenomenon in this transition (Ref. 146) ; and c) the observation of a vacancy induced surface disordering in Pb(100) before surface melting (Ref. 132).

Overlayer dynamic ordering (in the early 80s to present): a) physical realization of the Lifshitz-Allen-Cahn curvature driven growth mechanism during the two-dimensional domain growth of an overlayer (Ref. 22) (1983); b) physical realization of the random field Ising effect in the two-dimensional domain growth of an overlayer (Ref. 68) (1988); c) experimental study of growth front dynamics far from equilibrium: the observation of a time-invariant structure factor (predicted earlier) from an epitaxial growth front (Ref. 150) (1992); and d) dynamic scaling of a different kind (unstable growth) using the high-resolution low-energy electron diffraction technique was also discovered: epitaxial growth of Si/Si (Ref. 173) (1994), sputtering of Si (Ref. 172) (1994), amorphous growth of Si/Si (Ref. 194) (1996).

Light scattering (1995-present): A major advancement has been made in the light scattering techniques for surface roughness and dynamic growth front study: an improvement of four orders of magnitude in temporal resolution (Ref. 195) and two orders of magnitude in spatial resolution (Ref. 178). The time resolution has been improved from a few minutes/profile measurement to a few milliseconds/profile time scale and at the same time the dynamic range of interface width has been improved two orders of magnitude. This development represents a major breakthrough in using light scattering technique for real-time growth/etch front study (Ref. 196) (1996).

D. Self-Ion Assisted Deposition Techniques

Ionized cluster beam deposition (early to mid 80's): To provide a fundamental understanding of on the mechanism of metal and semiconductor cluster formation in ionized cluster bean deposition (Ref. 35). Critical size was determined and the long standing controversy on the metal and semiconductor cluster formation in ionized cluster beam deposition was resolved (Ref. 72). A novel multistate condensation strategy was developed to study in detail the dynamics of cluster formation in a supersonic expansion from a crucible and cluster size distribution was determined (Ref. 47).

Partially ionized beam (PIB) deposition (mid 80's to present): Invention and creative design of a class self-ion assisted deposition sources for self-ion assisted deposition techniques, called the partially ionized beam deposition (Ref. 66) (1988), to grow very unusual metal and insulator thin films and interfaces at low substrate temperatures. Using this technique, an ideal single crystal Al film which was incommensurate to the substrate was deposited on a Si(111) surface under a conventional vacuum condition at room temperature (Ref. 84). Other interesting examples using the PIB deposition techniques are: 1) room temperature epitaxy of metal on GaAs substrates in a conventional vacuum condition (Ref. 201); 2) room temperature deposition of bulk-like resistivity metal films (Ref. 98); 3) growth of perfectly oriented polycrystalline metal films with unusually tight texture on amorphous substrate (Ref. 86); 4) order of magnitude improvement of electromagnetic lifetime of PIB deposited films (Ref. 88); 5) dramatic improvement of adhesion of metal films on polymer substrates (Ref. 197); 6) the ability to fill high aspect ratio vias/trenches with metal (Ref. 62); and 7) room temperature coating of dense and transparent oxides and ceramic films with extremely low dc leakage current (Ref. 130).

PIB mechanism: A fundamental mechanism for PIB film growth has been proposed to explain the observed film growth at low substrate temperature. A model involving the generation of a high temperature, high mobility layer near the region of ion impact at the growth front has been successfully developed to account much of the observed unusual growth behavior of the PIB deposition (Ref. 105, and theses by P. Bai and B. Gittleman).

E. Vapor Deposition of Novel Polymeric Films

Development of novel vapor deposition techniques for polymers and polymer composites (1990-present): Vapor deposition techniqueswere developed to deposit polymeric films with very low dielectric constant and films with very high electro-optics coefficient. Examples are the deposition of Parylene-F films using a monomer liquid, C 8 F10 (Ref. 209); and the deposition of novel polynathalene films (with Professor J. Moore) using a new precursor (Ref. 189). In contrast to the conventional spin-on polymers, these films are polymerized at very low substrate temperatures and are coated in a vacuum condition where no moisture is trapped. Co-polymerized thin films (Ref. 199) and polymer-chromophore composite films (Ref. 182) with very high electro-optic coefficient were created using the vapor deposition techniques.

 

Publications

A. Books and Book Chapters

  1. Book- “Chemical vapor deposition polymerization—the growth and properties of Parylene thin films”, J. Fortin and T.-M. Lu, Kluwer Academic Publishers (2004).
  2. Book- "Puled and Puled bias sputter deposition---principles and applications", E. Barnat and T.-M. Lu, Kluwer (2003).
  3. Book- "Characterization of amorphous and crystalline rough surfaces-Principles and applications", Y.-P. Zhao, G.-C. Wang, and T.-M. Lu, Academic Press (Sept. 2000).
  4. Book- "Diffraction from Rough Surfaces and Dynamic Growth Fronts", H.-N. Yang, G.-Wang, and T.-M. Lu. World Scientific, Singapore (1993).
  5. book- "Turmoil and opportunities in higher education- the road of an academic department at the dawn of the 21st Century", Amazon.com, Jan. 2000.
  6. Book- "Low Dielectric Constant Materials:-Synthesis and Applications in Microelectronics", Edited by T.-M. Lu, S. Murarka, T.S. Kuan, and C. Ting, Mat. Res. Soc. Symp. Proc. Vol. 381 (1995).
  7. Book- "Low Dielectric Constant Materials IV", Edited by C. Chiang, P. Ho, T.-M. Lu, and J. Wetzel, Mat. Res. Soc. Symp. Proc. Vol. 511 (1998).
  8. Book- “Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics”, Edited by R.J. Carter, C.S. Hau-Riege, G.M. Kloster, T.-M. Lu, and S.E. Schulz, Mat. Res. Soc. Symp. Proc. Vol. 812 (2004).
  9. Book Chapter-"Chemisorption: Island Formation and Adatom Interactions", M.G. Lagally, T.-M. Lu, and G.-C. Wang, in Chemistry and Physics of Solid Surfaces, Ed. P. Vanselow, Vol. II, 153-180, CRC Press (1979).
  10. Book Chapter-"Surface Structures and Order-Disorder Phase Transitions", The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis, P.D. Woodruff, G.-C. Wang, and T.-M. Lu, Ed. D.A. King and P.D. Woodruff, Elsevier North Holland, Amsterdam (1983).
  11. Book Chapter - "Metallization Techniques", D. Skelly, T.-M. Lu, and D.W. Woodruff, VLSI Electrons Vol. 15, Edited by N.G. Enispruch, S.S. Cohen and G.S. Gildenblat, Academic Press, Orlando, FL (1987) p. 101.

B. Journal Articles

  1. "Island-Dissolution Phase Transition in a Chemisorbed Layer", T.-M. Lu, G.-C. Wang and M.G. Lagally, Phys. Rev. Lett. 39, 411 (1977).
  2. "Phase Transitions in the Chemisorbed Layer W(110)p(2x1)-O as a Function of Coverage I. Experimental", G.-C. Wang, T.-M. Lu and M.G. Lagally, J. Chem. Phys. 69, 479 (1978).
  3. "Island Formation and Condensation of a Chemisorbed Overlayer", T.-M. Lu, G.-C. Wang and M.G. Lagally, Surf. Sci. 92, 133 (1980).
  4. "Ising Models for Order-Disorder Transitions in an Adsorbed Layers",T.-M.Lu, Surf. Sci. 93, L111 (1980).
  5. "Surface Defects and Thermodynamics of Chemisorbed Layers", M.G. Lagally, T.-M. Lu and D.G. Welkie, J. Vac. Sci. Technol. 17, 223 (1980).
  6. "Quantitative Analysis of Step Densities Using a Two-Dimensional Random Probability Model", S.R. Anderson, T.-M. Lu, M.G. Lagally and G.-C. Wang, J. Vac. Sci. Technol. 17, 207 (1980).
  7. "The Resolving Power of a LEED Diffractometer and the Analysis of Surface Imperfections", T.-M. Lu and M.G. Lagally, Surf. Sci. 99 , 695 (1980).
  8. "Adsorbed Overlayer Critical Phenomena by LEED", Ordering in Two Dimensions", T.-M. Lu, Ed. S.K. Sinha, North Holland Publishing Co. (1980).
  9. "Observations of Island Formation and Dissolution in a Chemisorbed Layer by LEED", M.G. Lagally, T.-M. Lu and G.-C. Wang, Ordering in Two Dimensions, Ed. S.K. Sinha, North Holland Publishing Company (1980).
  10. "The Effect of Instrumental Broadening in LEED Intensity-Energy Profiles", T.-M. Lu, M.G. Lagally and G.-C. Wang, Surf. Sci. 104, L229 (1981).
  11. "Reconstructed Domains on a Stepped W(100) Surface", G.-C. Wang and T.-M. Lu, Surf. Sci. 107, 139 (1981).
  12. "Quantitative Island Size Determination in the Chemisorbed Layer W(110)p(2x1)-O II. Theory", T.-M. Lu, G.-C. Wang and M.G. Lagally, Surf. Sci. 107 , 494 (1981).
  13. "Fluctuation Phenomena Near an Overlayer Order-Disorder Phase Transition", T.-M. Lu, L.-H. Zhao and M.G. Lagally, J. Vac. Sci. Technol. 18, 504 (1981).
  14. "The Role of Instrumental Broadening in Surface Structure Determination by Low-Energy Electron Diffraction", T.-M. Lu and M.G. Lagally, Determination of Surface Structures by LEED , Eds. P. Marcus and F. Jona, Plenum, p. 497 (1982).
  15. "LEED Investigation of Extended Defects at the Surface of Ge Films Grown Epitaxially on GaAs (110)", H.M. Clearfield, D.G. Welkie, T.-M. Lu and M.G. Lagally, J. Vac. Sci. Technol. 19, 323 (1981).
  16. "Direct Determination of the Size Distribution of Adsorbed-Layer Islands from LEED Beam Intensity-vs-Angle Profiles", T.-M. Lu, L.-H. Zhao and M.G. Lagally, Solid Films and Surfaces, Ed. J.W. Gadzuk, 634-636, North Holland Publishing, Amsterdam (1982).
  17. "Diffraction From Surfaces With a Random Distribution of Steps", T.-M.Lu and M.G. Lagally, Surf. Sci. 120, 47 (1982).
  18. "A New Approach to the Quantitative Determination of Size Distributions in X-Ray Diffraction", L.-H. Zhao, T.-M. Lu and M.G. Lagally, Acta Cryst. A38, 800 (1982).
  19. "Low Energy Electron Diffraction From Overlayer Islands with Positional Correlation", T.-M. Lu, L.-H. Zhao, G.-C. Wang, M.G. Lagally and J. Houston, Surf. Sci. 122, 519 (1982).
  20. "Structure of Reconstructed Domains on a High Density Stepped W(100) Surface", G.-C. Wang and T.-M. Lu, Surf. Sci. Lett. 122, L635 (1982).

PAPERS BASED ON WORK DONE WHILE AT RENSSELAER

  1. "Phase Relationships for Adsorbed Layers on Surfaces", M.G. Lagallyand T.-M. Lu, in: Alloy Phase Diagrams, Eds. L.H. Bennett, T.B. Massalski and B.C. Giessen, Materials Research Society, Vol. 19, 313 (1983), North Holland Publisher.
  2. "Dynamics of Two-Dimensional Ordering: Oxygen Chemisorbed on the W(112) Surface", G.-C. Wang and T.-M. Lu, Phys. Rev. Lett. 50 , 2014 (1983).
  3. "Phase Diagram of Oxygen Chemisorbed on the W(112) Surface", G.-C. Wang and T.-M. Lu, Phys. Rev. B 28, 6795 (1983).
  4. "Atomic Correlations of Stepped Surfaces and Interfaces", J.M. Pimbleyand T.-M. Lu, J. Appl. Phys. 55, 182 (1984).
  5. "A Two-Dimensional Random Growth Model in Layer by Layer Epitaxy", J.M. Pimbley and T.-M. Lu, Surf. Sci. 139, 360 (1984).
  6. "Atomic Correlations During the First Stages of Epitaxy", J.M. Pimbleyand T.-M. Lu, J. Vac. Sci. Technol. A2, 457 (1984).
  7. "Kinetics of Antiphase Domain Coarsening in an Overlayer", G.-C. Wang, and T.-M. Lu, J. Vac. Sci. Technol. A2, 1048 (1984).
  8. "Structural Effects in the Initial Stages of Epitaxy", J.M. Pimbleyand T.-M. Lu, in: Thin Films and Interfaces, Mater. Res. Soc. Symp. Proc. 20, 375 (1984).
  9. "Misoriented Surfaces with Randomly Distributed Steps", M. Prescicci and T.-M. Lu, Surf. Sci. 141, 233 (1984).
  10. "Exact One-Dimensional Pair Correlation Functions of a Monolayer/Substrate System", J.M. Pimbley and T.-M. Lu, J. Appl. Phys. 57(4), 1121 (1985).
  11. "More Than One Monolayer Adsorption of Oxygen on the W(112) Surface", G.-C. Wang, J.M. Pimbley and T.-M. Lu, Phys. Rev. B31, 1950 (1985).
  12. "Nozzle Beam Deposition of SiO2 Films", J. Wong, T.-M. Lu and S. Mehta, J. Vac. Sci. Technol. B3(1), 453 (1985).
  13. "Rapid Thermal Annealing on Deposited SiO2 Films", J. Wong, T.-M. Lu and S. Cohen, in Energy Beam-Solid Interactions and Thermal Processing Transient Annealing, Mater. Res. Soc. Symp. Proc. Vol. 35, 515 (1985).
  14. "Characterization of Surface Defect Structure by Low-Energy Electron Diffraction", J.F. Wendelken, G.-C. Wang, J.M. Pimbley and T.-M. Lu, in Advanced Photon and Particle Techniques for the Characterization of Defects in Solids, Mater. Res. Soc. Symp. Proc. Vol. 41, 172 (1985).
  15. "Condensation of Metal and Semiconductor Vapors During Nozzle Expansion", S.-N. Yang and T.-M. Lu, J. Appl. Phys. 58, 541 (1985).
  16. "Diffraction From Incommensurate Domain Walls", P. Fenter and T.-M. Lu, Surf. Sci. 154, 15 (1985).
  17. "Two-Dimensional Correlations in Epitaxial Layers", J.M. Pimbley and T.-M. Lu, J. Appl. Phys. 57(10), 4583 (1985).
  18. "Physical Realization of Two-Dimensional Ising Critical Phenomenon: Oxygen Chemisorbed on a W(112) Surface", G.-C. Wang and T.-M. Lu, Phys. Rev. B31, 5918 (1985).
  19. "Diffraction From Surfaces with Interacting Steps", J.M. Pimbley and T.-M. Lu, Surf. Sci. 159, 169 (1985).
  20. "Characteristics of SiO2 Films Deposited by Ionized Nozzle-Beam Technique", J. Wong, T.-M. Lu, S. Mehta and R. Stumps, in Advanced Applications of Ion Implantation, SPIE Vol. 530, 84 (1985).
  21. "Integral Representation of the Diffracted Intensity from One-Dimensional Stepped Surfaces and Epitaxial Layers", J.M. Pimbley and T.-M. Lu, J. Appl. Phys. 58(6), 2184 (1985).
  22. "Short-Range Correlation in Imperfect Surfaces and Overlayers", J. M.Pimbleyand T.-M. Lu, Surface Structures, Ed. M. Van Hove, Plenum Press, p. 361 (1985).
  23. "Distribution of Domain Sizes During Overlayer Growth", J.M. Pimbley, T.-M. Lu and G.-C. Wang, Surf. Sci. 159, L467 (1985).
  24. "Weakly Coupled Two-Dimensional Correlations in Finite-Level Epitaxy and Chemisorption", J.M. Pimbley and T.-M. Lu, J. Appl. Phys. 59 (7), 2439 (1986).
  25. "Island Coalescence in a Chemisorbed Overlayer", J.M. Pimbley, T.-M. Lu and G.-C. Wang, J. Vac. Sci. Technol. A4(3), 1357 (1986).
  26. "Non-Activated Metal Cluster Growth During Rapid Expansion", S.-N. Yang and T.-M. Lu, Chem. Phys. Lett. 127, 512 (1986).
  27. "Metal Cluster Size Distribution During Jet Expansion", S.-N. Yang and T.-M. Lu, Appl. Phys. Lett. 48, 1122 (1986).
  28. "Formation of Ultra-Small Metal Clusters During Rapid Expansion", T.-M.Luand S.-N. Yang, in Proceedings of the International Workshop on Ionized Cluster Beam Technology, Eds. T. Takagi and I, Yamada, Kyoto University, Japan (1986) p. 33.
  29. "Zero Step Coverage Using Jet Expansion Deposition Technique", R. Ramanarayanan, D. Skelly, T.-M. Lu and J. Wong, J. Vac. Sci. Technol. B4(5), 1180 (1986) .
  30. "Control of Cluster Size in Nozzle Jet Expansion", S.-N. Yang and T.-M. Lu, J. Vac. Sci. Technol. B 5(1), 355 (1987).
  31. "Unidirectional Deposition of Aluminum Using Nozzle Jet Beam Technique", R. Ramanarayanan, K. Polasko, D. Skelly, J. Wong, S.-N. Mei and T.-M. Lu, J. Vac. Sci. Technol. B5(1), 359 (1987).
  32. "PtSi/n-type Si Schottky Barrier Height Change by H+ Ion Implantation at the Interface", P. Hadizad, A.-S. Yapsir, T.-M. Lu, J.C. Corelli and A. Sugerman, Nucl. Instr. and Meth. B19/20, 431 (1987).
  33. Sticking Coefficient of Ar on Small Ar Clusters", S.-N. Yang and T.-M. Lu, Solid State Communications 61, 351 (1987).
  34. "Al/Si(100) Schottky Barrier Formation Using Nozzle Jet Beam Deposition", J. Wong, S.-N. Mei and T.-M. Lu, Appl. Phys. Lett. 50(11), 679 (1987).
  35. "Channeling Study of Structural Effects at Al(111)/Si(111) Interface Formed by Ionized Cluster Beam Deposition", H.-S. Jin, A.-S. Yapsir, T.-M. Lu, W.M. Gibson, I. Yamada and T. Takagi, Appl. Phys. Lett. 50(16), 1602 (1987).
  36. "Kinetics of Cluster Formation During Rapid Quenching", S.-N. Yang and T.-M. Lu, The Physics and Chemistry of Small Clusters, Eds. P. Jena, B.K. Rao and S.N. Khanna, NATO Advanced Science Institutes Series, Plenum Publishing Corporation (1987) p. 705.
  37. 57. "Self-Ions Effects on Al/Si Schottky Barrier Formation Using Nozzle Jet Beam Deposition", J. Wong, S.-N. Mei and T.-M. Lu, in Interfaces, Superlattices and Thin Films, Ed. J.D. Dow, Mater. Res. Soc. Symp. Proc.Vol. 77 , Pittsburgh, PA (1987) p. 211.
  38. "Ar Cluster Size Distribution During Supersonic Jet Expansion", S.-N.Yangand T.-M. Lu, Phys. Rev. B35, 6944 (1987).
  39. "Effects of H2+ Implantation on Al/Si Interface", A.-S. Yapsir, P. Hadizad, T.-M. Lu, J.C. Corelli, W. Lanford and H. Backhru, Appl. Phys. Lett. 50, 1530 (1987).
  40. "Ion Cluster Beam Metallized Interconnections for Wafer Scale Integration", R. Selvaraj, S.-N. Yang, T.-M. Lu and J.F. McDonald, Proc. of the VLSI Multilevel Interconnection Conference, IEEE Electron Devices Society, New York, p.440 (1987).
  41. "Control of Al Orientation on Si(100) Substrate Using a Partially Ionized Beam", C.-H. Choi, R. Ramanarayanan, S.-N. Mei and T.-M. Lu, in Materials Modification and Growth Using Ion Beams, Mater. Res. Soc. Symp. Proc.Vol. 93, 267 (Pittsburgh) (1987).
  42. "Non-Conformal Al Via Filling and Planarization by Partially Ionized Beam Deposition for Multilevel Interconnection", S.-N. Mei, T.-M. Lu and S. Robert, IEEE Electron Device Letters, EDL 8(10), 506 (1987).
  43. "Impact of Step Edges on W(001) Surface Reconstruction", J.-K. Zuo, G.-C. Wang and T.-M. Lu, J. Vac. Sci. Technol. A5, 777 (1987).
  44. "High-Aspect-Ratio Via Filling with Al Using Partially Ionized Beam Deposition", S.-N. Mei, S.-N. Yang, T.-M. Lu and S. Roberts, AIP Conf. Proc. (USA) 167, 299 (1988).
  45. "Epitaxial Growth of Al(111)/Si(111) Films Using Partially Ionized Beam Deposition", C.-H. Choi, R.A. Harper, A.-S. Yapsir and T.-M. Lu, Appl. Phys. Lett. 51, 1992 (1987).
  46. "A High Ionization Efficiency Source for Partially Ionized Beam Deposition", S.-N. Mei and T.-M. Lu, J. Vac. Sci. Technol. A6, 9 (1988).
  47. "Two-Dimensional First-Order Phase Separation in an Epitaxial Layer", T.-M. Lu and S.-N. Yang, Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces, Eds. P.K. Larsen and P.J. Dobson, NATO ASI Series, Vol. 188, p. 225, Plenum Press, New York (1988).
  48. "Growth Kinetics of a Chemisorbed Overlayer in the Presence of Impurities", J.-K. Zuo, G.-C. Wang and T.-M. Lu, Phys. Rev. Lett. 60, 1053 (1988).
  49. "Epitaxial Growth of Thick Ag/Si(111) Films", K.-H. Park, H.-S. Jin, L. Luo, W.M. Gibson, G.-C. Wang and T.-M. Lu, Proc. Mater. Res. Soc. Symp. Proc. Vol. 102, (Pittsburgh) (1988) p. 271.
  50. "The Effects of High and Low Dose Hydrogen Ion Implantation on Al/n-Si Schottky Diodes", A.-S. Yapsir, P. Hadizad, T.-M. Lu, J.C. Corelli, J.W. Corbett, W.A. Lanford and H. Bakhru, Mater. Res. Soc., Vol. 104, (Pittsburgh) (1988) p. 297.
  51. "Instability in Deeply Supersaturated Systems", S.-N. Yang and T.-M. Lu, Phys. Rev. B 38, 6881 (1988).
  52. "On the Metal Cluster Formation in Ionized Cluster Beam Deposition", S.-N. Mei, S.-N. Yang, J. Wong, C.-H. Choi and T.-M. Lu, J. Cryst. Growth 87, 357 (1988).
  53. "Formation of Low Temperature Al/n-Si Schottky Contacts Using Partially Ionized Beam Deposition Technique", A.-S. Yapsir, P. Bai and T.-M. Lu, Appl. Phys. Lett. 53, 905 (1988).
  54. "Extended Bulk Defects Induced by Low Energy Ions During Partially Ionized Beam Deposition", W.I. Lee, J. Wong, J.M. Borrego and T.-M. Lu, J. Appl. Phys. 64, 2206 (1988).
  55. "Structural Effects in Al(111)/Si(111) Heteroepitaxy by Partially Ionized Beam Deposition", A.-S. Yapsir, C.-H. Choi, S.-N. Yang, T.-M. Lu, M. Madden and B. Tracy, Mater. Res. Soc. Symp. Proc. Vol. 116, p. 465 (Pittsburgh) (1988).
  56. "Defect Centers and Changes in the Electrical Characteristics of Al/n Type Si Schottky Diodes Induced by Hydrogen-ion Implantations", A.-S. Yapsir, P. Hadizad, J. Corelli, J.W. Corbett, W.A. Lanford, H. Bakhru, and T.-M. Lu, Phys. Rev. B37, 8982 (1988).
  57. "Reduction of Interface Hydrogen Content by Partially Ionized Beam Deposition Technique", A.-S. Yapsir, T.-M. Lu and W.A. Lanford, Appl. Phys. Lett. 52, 1962 (1988).
  58. "Electrical Characteristics of Hydrogen Implanted Silicon Schottky Diodes Having Large Difference in Metal Work Function", A.-S. Yapsir, P. Hadizad, T.-M. Lu, J.C. Corelli, A. Sugerman and H. Bakhru, J. Appl. Phys. 63, 5040 (1988).
  59. "Al/Si Interface Characteristics Formed by Partially Ionized Beam Deposition at 2.5 KV", J. Wong, T.-M. Lu and C. Lam, in Laser and Particle-Beam Chemical Processing for Microelectronics, Mater. Res. Soc. Symp. Proc. Vol. 101, 189 (1988).
  60. "A Simple Technique for Al Planarization", P. Bai, T.-M. Lu and S. Roberts, Proc. 5th International IEEE VLSI Multilevel Interconnection Conference, Electron Devices Society (1988) p. 446.
  61. "Hydrogen Passivation of a Substitutional Sulfur Defect in Silicon", A.-S.Yapsir, P. Deak, R.K. Singh, L.C. Snyder, J.W. Corbett and T.-M. Lu, Phys. Rev. B38, 9936 (1988).
  62. "Partially Ionized Beam Processing: Via Filling and Planarization", T.-M.Lu, P. Bai and A.-S. Yapsir, in Techcon'88, Semiconductor Research Corporation, Research Triangle, p. 75 (1988).
  63. "Surface Modification of Silicon by Partially Ionized Beam Deposited Aluminum", R. Srinivasan, S. Murarka and T.-M. Lu, J. Appl. Phys. 65 , 1198 (1989).
  64. "Direct Observation of an Incommensurate Solid-Solid Interface", T.-M.Lu, A.-S. Yapsir, P. Bai, P.-H. Chang and T.J. Shaffner, Phys. Rev. B39 , 9584 (1989).
  65. "Collapsing of Thermally Induced Steps in Pb(111) Surface", H.-N. Yang, T.-M. Lu and G.-C. Wang, Phys. Rev. Lett. 62, 2148 (1989).
  66. "Partially Ionized Beam Deposition of Oriented Films", A.-S. Yapsir, L. You, T.-M. Lu and M. Madden, J. Materials Research 4, 343 (1989).
  67. "Texture Analysis of Al/SiO2 Films Deposited by a Partially Ionized Beam", D.B. Knorr and T.-M. Lu, Appl. Phys. Lett 54 , 2210 (1989).
  68. "Electromigration in Al/SiO2 Films Prepared By Partially Ionized Beam Deposition Technique", P. Li, A.-S. Yapsir, K. Rajan and T.-M. Lu, Appl. Phys. Lett. 54, 2443 (1989).
  69. "Self-Cleaning Effects in Partially Ionized Beam Deposition of Cu Films", G.-R. Yang, P. Bai, T.-M. Lu and L. Lou, J. Appl. Phys. 29 , 4519 (1989).
  70. "Channeling Study of Epitaxial Al and Ag Films on Si(111) Substrate", H.-S. Jin, K.-H. Park, A.-S. Yapsir, G.-C. Wang, T.-M. Lu, L. Luo, W.M. Gibson, I. Yamada and T. Takagi, Proceedings of the 10th Conference on the Application of Small Accelerators in Research and Industry (1988).
  71. "Random Field Effects on Dynamical Scaling in the Domain Growth of a Chemisorbed Overlayers", J.-K. Zuo, G.-C. Wang and T.-M. Lu, Phys. Rev. B40, 524 (1989).
  72. "Partially Ionized Beam Deposition of Thin Films", T.-M. Lu, Invited review paper, in "Ion Beam Processing of Advanced Electronic Materials ", Eds. N. Cheung, A. Marwick and J. Roberto, Mater. Res. Soc. Symp. Proc. Vol. 147, Pittsburgh, p. 207 (1989).
  73. "Low Temperature Plasma Amorphous Carbon Encapsulation for Reliable Multilevel Interconnections", J.F. McDonald, S. Dabral, X.-M. Wu, A. Martin and T.-M. Lu, Proc. of the International VLSI Multilevel Interconnection Conference, IEEE Electron Devices Society, New York (1989) p. 366.
  74. "Dynamical Scaling in the Domain Growth of a Chemisorbed Overlayer: W(112)(2x1)-O", J.-K. Zuo, G.-C. Wang and T.-M. Lu, Phys. Rev. B39 , 9432 (1989).
  75. "High-Resolution Low-Energy Electron Diffraction Study of Pb(110) Surface Roughening Transition", H.-N. Yang, T.-M. Lu and G.-C. Wang, Phys. Rev. Lett. 63, 1621 (1989).
  76. "Dielectric, Conducting, and Photonic Polymers for Devices in Multichip Packaging", J.F. McDonald, N.P. Vlannes, G.E. Wnek and T.-M. Lu, Invited paper, Materials Research Society, Electronic Packaging Materials Science, IV , ed. E. Lillie (1990).
  77. "Room Temperature Epitaxy of Cu(111)/Si(111) by Partially Ionized Beam Deposition", P. Bai, G.-R. Yang, D. Knorr and T.-M. Lu, J. Mater. Res. 5, 989 (1990).
  78. "Low Resistivity Cu Thin Film Deposition Using Self-Ions Bombardment", P. Bai, G.-R. Yang and T.-M. Lu, Appl. Phys. Lett. 56, 198 (1990).
  79. "Deposition of Cu Films on SiO2 Using a Partially Ionized Beam", P. Bai, G.-R. Yang, T.-M. Lu and L.W.M. Lau, J. Vac. Sci. Technol. A8, 1465( 1990).
  80. "Impurity Effects in Partially Ionized Beam Metal Via Filling", B. Gittleman , P. Bai, G.-R. Yang, T.-M. Lu and C.-K. Hu, J. Vac. Sci. Technol. A8, 1514 (1990).
  81. "Observation of a New Al(111)/Si(111) Orientational Epitaxy", A.-S. Yapsir, C.-H. Choi and T.-M. Lu, J. Appl. Phys. 67, 796 (1990).
  82. "Self-Sputtering Effects by Low-Energy Ions During Partially Ionized Beam Deposition", P. Bai, C. Steinbruchel and T.-M. Lu, Mater. Res. Soc. Symp. Proc. Vol. 157, 55 (1990).
  83. "Defect Analysis of Epitaxial Ag Films on Silicon by MeV Ion Channeling",G.A. Smith, K.-H. Park, S. Hashimoto and W.M. Gibson, G.-C. Wang and T.-M. Lu, Surf. Sci. 233, 115 (1990).
  84. "An Unusual Orientation Relationship for a Copper Film on Si(111)", D.B. Knorr, P. Bai and T.-M. Lu, Appl. Phys. Lett. 56, 1859 (1990).
  85. "Study of Interface Impurity Sputtering in Partially Ionized Beam Deposition", P. Bai, G.-R. Yang and T.-M. Lu, J. Appl. Phys. 68, 3619 (1990).
  86. "Intrinsic Cu Gathering at SiO2/Si Interface", P. Bai, G.-R. Yang and T.-M. Lu, Appl. Phys. Lett. 68, 3313 (1990).
  87. "Reactive Partially Ionized Beam Deposition of Thin BaTiO3 Films", P. Li and T.-M. Lu, Appl. Phys. Lett. 57, 2336 (1990).
  88. "Low Temperature Processing for Interconnect and Packaging", Invited Paper, Advanced Metallization in Microelectronics", T.-M. Lu, J. McDonald, S. Dabral, G.-R. Yang, L. You and P. Bai, Mater. Res. Soc. Symp. Proc. Vol. 181, 55 (1990).
  89. "Copper-Parylene Interactions in Multilevel Interconnection Structures", J. McDonald, S. Dabral, G.-R. Yang, H. Bakhru, and T.-M. Lu, IEEE VMIC-1990, Santa Clara, CA (IEEE CAT. No. 89-644090), page 345.
  90. "Photonic Multichip Packaging Using Electro-Optic Organic Materials and Devices", J.F. McDonald, N.P. Vlannes, G.E. Wnek, T.-M. Lu, T.C. Nason and L. You, Invited Paper at SPIE/ZEEE International Symposium, Advances in Interconnects and Packaging, OPTCON'90, SPIE 1390-13 (1990).
  91. "Partially Ionized Beam Deposition of High Dielectric Constant thin Films for Multichip Module Bypass Capacitors-BaTiO3 or Ta 2O5", J. McDonald and T.-M. Lu, Proc. NEPCON, Los Angeles (1990), page 24.
  92. "Effect of Substrate Surface Roughness on the Columnar Growth of Cu Films", P. Bai, J.F. McDonald, T.-M. Lu and M. Costa, J. Vac. Sci. Technol. A9, 2113 (1991).
  93. "Kinetics of Overlayer Growth", J.-K. Zuo, G.-C. Wang and T.-M. Lu, NATO Advanced Study Institute Proceeding, Plenum, New York (1991).
  94. "Cu Deposition on Rough Ceramic Substrate: Physical Structure, Microstructure, and Resistivity", P. Bai, J.M. McDonald, T.-M. Lu, and M.J. Costa, J. Mater. Res. 6, 289 (1991).
  95. "High-Resolution Low-Energy Electron-Diffraction Analysis of the Pb(110) Roughening Transition", H.-N. Yang, T.-M. Lu and G.-C. Wang, Phys. Rev. B 43, 4714 (1991).
  96. "Texture Development in Thin Metallic Films", D.B. Knorr, D.P. Tracy and T.-M. Lu, Proceedings of the 9th Intl. Conf. on Textures of Materials (1991).
  97. "Effects of Deposition Conditions on Texture in Copper Thin Films on Si(111)", D. B. Knorr and T.-M. Lu, Textures and Microstructures 13, 155 (1991).
  98. "Texture Evolution During Grain Growth of Aluminum Films", D.B. Knorr, D. P. Tracy, and T.-M. Lu, in Evolution of Thin Film and Surface Microstructures, eds. C. V. Thompson, J. Y Tsao, and D. J. Srolovitz, Mat. Res. Soc. Symp. Proc. Vol. 202 (1991), page 199.
  99. "Texture Development in Thin Metallic Films", D.B. Knorr, D.P. Tracy, and T.-M. Lu, Textures and Microstructures 14-18, 543 (1991).
  100. "Secondary Ion Mass Spectrometry Study of the Thermal Stability of Cu/Refractory Metal/Si Structures", L.C. Lane, T.C. Nason, G.-R. Yang, T.-M. Lu and H. Bakhru, J. Appl. Phys. 69, 6719 (1991).
  101. "Effect of Elementary Plasma on Metal/Si Films by Partially Ionized Beam Deposition", G.-R. Yang, T.C. Nason, P. Bai, T.-M. Lu and W.M. Lau, J. Electr. Mat. 20, 577 (1991).
  102. "Channeling Study of Partially Ionized Beam Deposited Ag Films on Si(111) Substrates", H.-S. Jin, L. You and T.-M. Lu, in Surface Chemistry and Beam-Solid Interactions Symp., Ed. By H.A. Atwater, F.A. Houle, D.H. Lowndes, Mater. Res. Soc. Symp. Proc., Page 69 (1991).
  103. "Microstructure of Epitaxial Al(111)/Si(111) Films Studied by Synchrotron Grazing Incidence X-ray Diffraction", H.H. Hung, K.S. Liang, C.H. Lee and T.-M. Lu, in Evolution of Thin Film and Surface Microstructure Symp., Ed. By C.V. Thompson, J.Y. Tsao, D.J. Srolovitz, Page. 301, Mater. Res. Soc. Symp. Proc. (1991).
  104. "Diffusion and Adhesion of Cu/Parylene", G. Yang, S. Dabral, L. You, T.-M. Lu, H. Bakhru and J. McDonald, Mater. Res. Soc. Symp. Proc. Vol. 203, 271 (1991).
  105. "Low-Temperature Deposition of High Dielectric Constant Thin Films for By-Pass Capacitor Applications", P. Li, B. Gittleman and T.-M. Lu, Mater. Res. Soc. Symp. Proc. Vol. 203, 315 (1991).
  106. "Chromium as Adhesion Promoter and Diffusion Barrier for Cu on Parylene". S. Dabral, G.-R. Yang, H. Bakhru, T.-M. Lu and J. McDonald, IEEE, VMIC 1991, P. 408.
  107. "Correlation Between Copper Diffusion and Phase Change in Parylene", G.-RYang, S. Dabral, L. You, H. Bakhru, J. McDonald and T.-M. Lu, J. Electr. Mat. 20, 571 (1991).
  108. "XPS Study of the Atomic Structure Change of Amorphous Carbon Film Annealed in Vacuum", X.-M. Wu, C.-S. Fang, G.-R. Yang, T.-M. Lu and I. Hill, J. Vac. Sci. Technol. 9, 2986 (1991).
  109. "Study of Silver Diffusion into Si(111) and SiO2", T.C. Nason, G.-R. Yang, K.-H. Park and T.-M. Lu, J. Appl. Phys. 70, 1392 (1991).
  110. "High Charge Storage Density in BaTiO3 Thin Films", P. Li, T.-M. Lu and H. Bakhru, Appl. Phys. Lett. 58, 2639 (1991).
  111. "Conduction Mechanisms in BaTiO3 Thin Films", P. Li and T.-M. Lu, Phys. Rev. B. 43, 14261 (1991).
  112. "Vacancies Induced Instability in Pb(100) Surface", H.-N. Yang, K. Fang, G.-C. Wang and T.-M. Lu, Phys. Rev. Lett. B 44, 1306 (1991).
  113. "Electro-Optic Multichip Modules with Non-Linear Organic Waveguides", J.McDonald, N.P. Vlannes, T.-M. Lu, G.E. Wnek, E.P. Boden, M. Ghezzo, K.R. Stewart, C. Yakymysn, Proc. of the IEEE sponsored Cal'Tech VLSI Conference -MCM Supplementary Meeting, Los Angeles (1991), page 93.
  114. "Low Temperature Deposition of High Dielectric Constant Thin films for Power Bypass Capacitor Applications in Multichip Modules", T.-M. Lu, P. Li, E. J. Rymaszewski, H. J. Greub, and J. McDonald, Proc. of the Technical Program, III, National Electronic Packaging and Production Conference West ‘91 (1991), page 1833.
  115. "Growth of Epitaxial Ag/Si Films by the Partially Ionized Beam Deposition Technique", T.C. Nason, L. You, G.-R. Yang and T.-M. Lu, J. Appl. Phys. 69, 773 (1991).
  116. "Enhancement of Electron Thermal Diffuse Scattering by Surface Defects", H.-N. Yang and T.-M. Lu, Phys. Rev. B. 44, 11457 (1991).
  117. "Direct Observation of Microcrystalline Structure in Amorphous BaTiO 3 Thin Films", P. Li and T.-M. Lu, Appl. Phys. Lett. 59 , 1064 (1991).
  118. "XPS Study of the Atomic Structure Change of Amorphous Carbon Films Annealed in Vacuum", X.-M. Wu, C.S. Ares Fang, G.-R. Yang, I. Hill and T.-M. Lu, J. Vac. Sci. Technol. A9, 2986 (1991).
  119. "Partially Ionized Beam Deposition of 2-methyl-4-nitroariline (MNA) Thin Films", T. Nason, J. McDonald and T.-M. Lu, J. Appl. Phys. 70 (1991).
  120. "Fluorinated Paralene as an Interlayer Dielectric for Thin Film MCMs", S. Dabral, S. Zhang, X.M. Wu, G.-R. Yang, C.-I. Lang, H. Bakhru, R. Olson, T.-M . Lu, and J.F. McDonald, in Electronic Packaging Materials Science VI, Ed. By P.S. Ho, K.A. Jackson, Che-Yu Li, and G.F. Lipscomb, Mater. Res. Soc. Symp. Proc., Page 439 (1992).
  121. "Vacuum Deposition of Amorphous Fluoropolymer Thin Films by Thermolysis of Teflon Amorphous Fluoropolymer", T. Nason, J. Moore and T.-M. Lu, App. Phys. Lett. 60, 1866 (1992).
  122. "Diffusion in Ni/Cu Bilayer Films", P. Bai, B.D. Gittleman, B.-X. Sun, J.F. McDonald, T.-M. Lu and M.J. Costa, Appl. Phys. Lett. 60, 1824 (1992).
  123. "Room Temperature Epitaxial Growth of Ag(110)/GaAs(100) Films", T. Nason, L. You and T.-M. Lu, Appl. Phys. Lett. 60, 174 (1992)
  124. "SIMS Characterization of Diffusion of Al and Ag in Parylene", G.-R. Yang, S. Dabral, T.-M. Lu and J. McDonald, J. Vac. Sci. Technol. A10, 2764 (1992).
  125. "Reduction in Diffusion of Cu in Parylene by Thermal Pre-Treatment", S.Dabral, G.-R. Yang, X.-M. Wu, T.-M. Lu and J. McDonald, J. Vac. Sci. Technol., A10, 916 (1992).
  126. "Observation of a Novel Double-Step Phase in Pb(110) Surface", H.-N.Yang, K. Fang, G.-C. Wang and T.-M. Lu, Europhys. Lett. 19, 215 (1992).
  127. "Alphatic Tetrafluorinated Parylene as a Conformal Insulator for Submicron Multilevel Interconnections", S. Dabral, X. Zhang, B.J. Howard, C. Chiang, G. Cuan, K. Hwang, R. Olson, H. Bakhru, C. Steinbruchel, T.-M. Lu, and J. McDonald, Proc. IEEE-VMIC, 1992, Santa Clara, CA, Page 86.
  128. "Time Invariant Structure Factor in an Epitaxial Growth Front", H.-N. Yang, T.-M. Lu, and G.-C. Wang, Phys. Rev. Lett. 68, 2612 (1992).
  129. "High-Resolution Low-Energy Electron Diffraction Study of Surface Instability and Growth Fronts", H.-N. Yang, J.-K. Zuo, K. Fang, T.-M. Lu, and G.-C. Wang, Mat. Res. Soc. Symp. Proc. Vol. 237, 49 (1992).
  130. "Measurements of Dynamic Scaling from Epitaxial Growth Front: Fe Film on Fe(001)", Y.-L. He, H.-N. Yang, T.-M. Lu, and G.-C. Wang, Phys. Rev. Lett. 69, 3770 (1992).
  131. "Densification Induced Dielectric Properties Change in Amorphous BaTiO3 Thin Films", P. Li, J. McDonald, and T.-M. Lu, J. Appl. Phys. 71, 5596 (1992).
  132. "Room Temperature Epitaxial Growth of Ag on Low-Index Si Surfaces by a Partially Ionized Beam", T.C. Nason, L. You, and T.-M. Lu, J. Appl. Phys. 72, 1 (1992).
  133. "Low Temperature Fabrication of Amorphous BaTiO3 Thin Film By-Pass Capacitors", W.-T. Liu, S. Cochrane, S.T. Lakshmikumar, D.B. Knorr, E.J. Rymaszewski, J.M. Borrego and T.-M. Lu. IEEE Electron Device Letters 14(7), 320 (1993).
  134. "Deposition of Amorphous BaTiO3 Optical Films at Low Temperature", W.-T. Liu, S.T. Lakshmikumar, D.B. Knorr, T.-M. Lu, and Ir. Gerard A. van der Leeden. Appl. Phys. Lett. 63, 574 (1993).
  135. "Reactive Sputtering Deposition of Low Temperature Tantalum Suboxide thin Films", X.-M. Wu, P.K. Wu, T.-M. Lu and E.J. Rymaszewski. Appl. Phys. Lett. 62(25), 3264 (1993).
  136. "Quasi-Two-Dimensional Crystal Growth on Structureless 3-Methylmethoxy-Nitrostilbene Thin Films", T.C. Nason, J.F. McDonald, and T.-M. Lu. Materials Chemistry and Physics 34, 142 (1993).
  137. "Vapor Deposition of Parylene Films from Precursors", L. You, G.-R. Yang, C.-I. Lang, P. Wu, J.A. Moore, J.F. McDonald and T.-M. Lu, in Chemical Perspectives of Microelectronic Materials III, edited by C.R. Abernathy, C.W. Bates, D.A. Bohling and W.S. Hobson. Mat. Res. Soc. Symp. Proc. Vol. 282, 593 (1993).
  138. "Planarization Techniques for Parylene as an Interlayer Dielectric", X. Zhang, L. You, S. Dabral, C. Chiang, D.S. Yaney, Rajiv Joshi, G.-R. Yang, T.-M. Lu and J. McDonald. IEEE-VMIC, Santa Clara (1993).
  139. "aa'a'' a'''Poly-tetrafluoro-p-xylylene as an Interlayer Dielectric for Thin Film Multichip Modules and Integrated Circuits", S. Dabral, X. Zhang, X.M. Wu, G.-R. Yang, L. You, C.I. Lang, K. Hwang, G. Cuan, C. Chiang, H. Bakhru, R. Olson, J.A. Moore, T.-M. Lu, and J.F. McDonald, J. Vac. Sci. Technol. B11, 1825 (1993).
  140. "Diffraction from Surface Growth Fronts", H.-N. Yang, T.-M. Lu and G.-C. Wang. Phys. Rev. B47, 3911 (1993).
  141. "Diffuse Light Scattering Study of Pb(110) Surface Roughening-Melting Transition", H.-N. Yang, K. Fang, T.-M. Lu, and G.-C. Wang. Phys. Rev. B47, 15842 (1993).
  142. "Vapor Deposition of Parylene-F by Pyrolysis of Dibromotetrafluoro-p-xylene", L. You, G.-R. Yang, C.-I. Lang, J.A. Moore, P. Wu, J.F. McDonald, and T.- M. Lu, J. Vac. Technol. A11, 3047 (1993).
  143. "Intense THz Beam From Organic Electro-Optic Materials", X.-C. Zhang, T.-M. Lu, and C.P. Yakymyshyn, Ultrafast Electronics and Optoelectronics 14, 119 (1993).
  144. "Deposition, Structural Characterization, and Broad-Band Dielectric Behavior of BaxTi2-xOy Thin Films", W.-T. Liu, S. Cochrane, P. Beckage, D.B. Knorr, T.-M. Lu, J.M. Borrego, and E.J. Rymaszewski, Mat. Res. Soc. Symp. Proc. Vol. 310, 157 (1993).
  145. "Vacuum Deposition of Nonlinear Chromophore-Polymer Composite Thin Films", G.-R. Yang, X.F. Ma, W.X. Chen, L. You, P.K. Wu, J. F. McDonald, and T.-M. Lu, Appl. Phys. Lett. 64, 533 (1994).
  146. "Texture of Vapor Deposited Parylene Thin Films", L. You, G.-R. Yang, D. B. Knorr, J. F. McDonald, and T.-M. Lu, Appl. Phys. Lett. 64, 2812 (1994).
  147. "Thermal and Spectroscopic Properties of Amorphous Fluoropolymer Thin Films", T. C. Nason and T.-M. Lu, Thin Solid Films, 239, 27 (1994).
  148. "Roughening/Faceting in Pb Growth on Pb(110)", K. Fang, T.-M. Lu, and G.-C. Wang, Phys. Rev. B49, 8331 (1994).
  149. "Interaction of Amorphous Fluoropolymer With Metal", P.K. Wu, G.-R. Yang, X.-F. Ma, and T.-M. Lu, Appl. Phys. Lett. 65, 508 (1994).
  150. "Dielectric Constant Dependence of Poole-Frenkel Potential in Tantalum Oxide Thin Films", X.M. Wu, S.R. Soss, E.J. Rymaszewski, and T.-M. Lu, Materials Chemistry and Physics 38, 297 (1994).
  151. "Frequency Domain (1 KHz-40 GHz) Characterization of Thin Films for Multichip Module Packaging Technology", W.-T. Liu, S. Cochrane, X. Pershan, X. Zhang, D.B. Knorr, E.J. Rymaszewski, J.M. Borrego, and T.-M. Lu, Electronics Letters 30, 117 (1994).
  152. "Anomalous Dynamic Scaling on the Ion-Sputtered Si(111) Surface", H.-N. Yang, G.-C. Wang, and T.-M. Lu, Phys. Rev. B50, 7635 (1994).
  153. "Instability in Low Temperature Molecular Beam Epitaxy Growth of Si/Si(111)", H.-N. Yang, G.-C. Wang, and T.-M. Lu, Phys. Rev. Lett. 73, 2348 (1994).
  154. "High Frequency Measurements of Dielectric Thin Films", P.K. Singh, R.S. Cochrane, J.M. Borrego, E.J. Rymaszewski, T.-M. Lu, and K. Chen, IEEE MTT-SYM Digest Vol. 3, 1457 (1994).
  155. "Chemical Vapor Deposition of Aromatic Polymers", J.A. Moore, C.-I. Lang, T.-M. Lu, and G.-R. Yang, Polym. Mater. Sci. and Eng. 72, 437 (1995).
  156. "Real Time Measurement of the Deterministic Relaxation of an Initially Rough Si(111) surface", H.-N. Yang, G.-C. Wang, and T.-M. Lu, Phys. Rev. Lett. 74, 2276 (1995).
  157. "Thermally Stable Amorphous BaxTa2-xOy thin films", W.-T. Liu, S.T Lakshmikumar, D.B. Knorr, E.J. Rymaszewski, T.-M. Lu, and H. Bakhru, Appl. Phys. Lett. 66, 809 (1995).
  158. "Measurement of Surface Roughness Parameter Using Angle Resolved Light Scattering", K. Fang, R. Adame, H.-N. Yang, G.-C. Wang, and T.-M, Lu, Appl. Phys. Lett. 66, 2077 (1995).
  159. "Surface Reaction and Stability of Parylene N and F Films at Elevated Temperatures", P.K. Wu, G.-R. Yang, and T.-M. Lu, J. Electr. Mat. 24, 53 (1995).
  160. "High Frequency Response of Fine Grain BaTiO3 Thin Films", P.K. Singh, S. Cochrane, W.-T. Liu, K. Chen, D.B. Knorr, J.M. Borrego, E.J. Rymaszewski, T.-M. Lu, Appl. Phys. Lett. 66, 3683 (1995).
  161. "Partially Ionized Beam Deposition of Metal on Insulator", S.R. Soss, C.A. Cook, and T.-M. Lu, J. Appl. Phys. 77, 2735 (1995).
  162. "Structural and Electro-Optical Investigation of a Vapor-Deposited Chromophore-Polymer Thin Film", P.K. Wu, G.-R. Yang, X.-F. Ma, A. Cococziela, T.-M. Lu, J. Appl. Phys. 77, 2258 (1995).
  163. "When Interface Gets Rough", invited paper, in "Fractal Aspects of Materials", T.-M. Lu, G.-C. Wang, and H.-N. Yang, Mat. Res. Soc. Symp. Proc. Vol. 367, 283 (1995).
  164. "Inconsistency Between Height-Height Correlation and Power-Spectrum Functions of Scale-Invariant Surfaces for Roughness Exponents a~1", H.-N. Yang and T.-M. Lu, Phys. Rev. B 51, 2479 (1995).
  165. "Formation of Facets and Pyramidlike Structures in Molecular Beam Epitaxy Growth of Si on Singular Si(111) Surface", H.-N. Yang, G.-C. Wang, and T.-M. Lu, Phys. Rev. B 51, 14293 (1995).
  166. "Quantitative Study of the Decaying of Intensity Oscillation in Transient Layer-by-Layer Growth", H.-N. Yang, G.-C. Wang, and T.-M. Lu, Phys. Rev. B 51, 17932 (1995).
  167. "Vapor Depositable, Low Dielectric Constant Polymers", J.A. Moore, C.-I. Lang, T.- M. Lu, and G.-R. Yang, Polym. Mat. Sci. Eng. 72, 437 (1995).
  168. "Thin Film Integral Capacitor Fabricated on a Polymer Dielectric for High Density Interconnect Applications", K.-W. Paik and T.-M. Lu, Mat. Res. Soc. Symp. Proc. Vol. 390, 33 (1995).
  169. "Vapor Deposition of Low K Polymer Films", C.-I. Lang, G.-R. Yang, D. Mathur, L. You, J.A. Moore, and T.-M. Lu, Mat. Res. Soc. Symp. Proc. Vol. 381, 45 (1995).
  170. "Low Dielectric Constant Polymers for on-Chip Interlevel Dielectrics", R.J. Gutmann, T. P. Chow, T.-M. Lu, J.A. McDonald, and S.P. Murarka, Mat. Res. Soc. Symp. Proc. 381, 177 (1995).
  171. "Metal-Parylene Interconnection Systems", S. Dabral, X. Zhang, B. Wang, G.-R. Yang, T.-M. Lu, and J.F. McDonald, Mat. Res. Soc. Symp. Proc. Vol. 381, 205 (1995).
  172. "Vapor Depositable, Low Dielectric Constant Polymer Thin Films for ULSI and Packaged Electronics Applications", T.-M. Lu, J.A. Moore, J.F. McDonald, C.-I. Lang, and G.-R. Yang, SEMICON WEST Proc., 1995.
  173. "Diffraction From Reconstructed Surfaces With Incommensurate Domain Walls", R.W. Cutler, G.-C. Wang, and T.-M. Lu, Surf. Sci. 340, 258 (1996).
  174. "Noise Induced Growth Front Roughening During Amorphous Si Growth", H.-N. Yang, Y.-P. Zhao, G.-C. Wang, and T.-M. Lu, Phys. Rev. Lett. 76, 3774 (1996).
  175. "Extraction of Real Space Correlation Function of a Rough Surface by Light Scattering Using Diode Array Detectors", Y.-P. Zhao, H.-N. Yang, G.-C. Wang, and T.-M. Lu, Appl. Phys. Lett. 68, 3063 (1996).
  176. "In Situ Real Time Study of Etching Process of Si(100) Using Light Scattering", Y.-P. Zhao, Y.-J. Wu, H.-N. Yang, G.-C. Wang, and T.-M. Lu, Appl. Phys. Lett. 69, 221 (1996).
  177. "Metal/Polymer Interface Adhesion by Partially Ionized Beam Deposition", S. Dabral, G.-R. Yang, B. Gittleman, P.K. Wu, C. Li, X. Zhang, J.F. McDonald, and T.-M. Lu, J. Appl. Phys. 80, 5759 (1996).
  178. "Microstructure of Parylene Films and the Effect of Copper Diffusion", G.- R. Yang, D. Mathur, X.M. Wu, S. Dabral, J. F. McDonald, and T.-M. Lu, J. Electr. Mater. 25, 1778 (1996).
  179. "High Electro-Optic Side-Chain Polymer by Vapor Deposition Polymerization", C.C. Roberts, G.-R. Yang, A. Cocoziello, Y.-P. Zhao, G. Wnek, and T.-M. Lu, Appl. Phys. Lett. 68, 2067 (1996).
  180. "Epitaxial Quality of Thin Ag Films on GaAs(100) Surfaces Cleaned With Various Wet Etching Techniques", K.E. Mello, S.R. Soss, S.P. Murarka, T.-M. Lu, and S.L. Lee, Appl. Phys. Lett. 68, 681 (1996).
  181. "Low-Temperature epitaxial Growth of CoGe2(001)/GaAs(100) Films Using the Partially Ionized Beam Deposition Technique", K.E. Mello, S.R. Soss, S.P. Murarka, T.-M. Lu, and S.L. Lee, Appl. Phys. Lett. 68, 1817 (1996).
  182. "Electron Transport in High Textured Metal Films Grown by Partially Ionized Beam Deposition", S.R. Soss, B. Gittleman, K.E. Mello, T.-M. Lu, and S.L. Lee, Mat. Res. Soc. Symp. Proc. Vol. 403, 633 (1996).
  183. "Room Temperature Deposition of High Dielectric Constant High Density Ceramic Thin Films", K. Chen, M. Nielsen, S. Soss, S. Liu, E.J. Rymaszewski, T.-M. Lu, Mat. Res. Soc. Symp. Proc. 415, 243 (1996).
  184. "Study on the Interface of Cu/PA-N and PA-N/Si by Secondary Ion Mass Spectroscopy and Scanning Electron Microscopy", G.-R. Yang, D. Mathur, J.F. McDonald, and T.-M. Lu, J. Vac. Sci. Technol. A 14, 3169 (1996).
  185. "Low and High Dielectric Constant Thin Films for Integrated Circuit Applications", R.J. Gutmann, W.N. Gill, T.-M. Lu, J.F. McDonald, S.P. Murarka, and E.J. Rymaszewski, in Advanced Metallization and Interconnect Systems for ULSI Applications, MRS ULSI XII, 393 (1997).
  186. "Study of Electron Trapping in the Amorphous Tantalum Oxide Thin Films Prepared by DC Magnetron Reactive Sputtering", K. Chen, M. Nielsen, E.J. Rymaszewski, and T.-M. Lu, Materials Chemistry and Physics 49, 42 (1997).
  187. "Sampling Induced Hidden Cycles in Correlated Random Rough Surfaces", H.-N. Yang, A. Chan, Y.-P. Zhao, T.-M. Lu, and G.-C. Wang, Phys. Rev. B56, 4224 (1997).
  188. "X-Ray Photoelectron Spectroscopy Study of Al/Ta2O 5 and Ta2O5/Al Buried Interfaces", K. Chen, G.-R. Yang, M. Nielsen, E.J. Rymaszewski, and T.-M. Lu, Appl. Phys. Lett. 70, 399 (1997).
  189. "Deposition of High Purity Parylene-F Using Low-Pressure Low-Temperature Chemical-Vapor-Deposition", P.K. Wu, G.-R. Yang, L. You, D. Mathur, A. Cocoziello, C.-I. Lang, J.A. Moore, T.-M. Lu, and H. Bakru, J. of Electr. Mat. 26 (8), 963, 1997.
  190. "Texture Analysis of CoGe2 Alloy Films Grown Heteroepitaxially on GaAs(100) Using Partially Ionized Beam Deposition", K.E. Mello, S.P. Murarka, T.-M. Lu, and S. Lee, J. Appl. Phys. 81, 1 (1997).
  191. "Study of Tantalum-Oxide Thin Film Capacitors on Metallized Polymer Sheets for Advanced Packaging Applications", K. Chen, M. Nielsen, S. Soss, E.J. Rymaszweski, T.-M. Lu, and C.T. Wan, IEEE Transactions CPMT: B/Advanced packaging, Vol. 20, 117 (1997).
  192. "Vapor Deposition of Low-Dielectric Constant Polymeric Thin Films", T.-M. Lu and J.A. Moore, Materials Research Society Bulletin 22, 28 (October 1997).
  193. "Study of Amorphous Ta2O5 Thin Films by DC Magnetron Reactive Sputtering", K. Chen, M. Nielsen, G.-R. Yang, E.J. Rymaszewski, and T.-M. Lu, J. Elec